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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Power Management - Specialized

Qorvo ACT4751MQI101SR

Name: ACT4751MQI101SR
Brand: Qorvo
SKU: ACT4751MQI101SR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: ACT4751MQI101SR

Manufacturer:: Qorvo

Category:: Power Management - Specialized

Package:: -

Datasheet:: ACT4751MQI101SR.pdf

Description:: 40V SYNCBUCK USB PD PPS CHARGING

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Product details

Overview

QPA2611 from Qorvo is a 5 W X-band GaN power amplifier IC operating from 8.0–12.0 GHz, delivering >37 dBm saturated output power at 12 dBm input, 42% PAE, and 35 dB small-signal gain. It serves as the final-stage RF power booster in phased-array radar transmitters requiring high efficiency and thermal robustness under pulsed operation.

For engineers reviewing the QPA2611 datasheet, pinout, applications, or equivalent options, this page provides verified specifications, package layout, real-world use scenarios in radar and satcom systems, and validated alternative options for frequency-agile high-power RF design.

Technical Context

The QPA2611 is fabricated on Qorvo's 0.15 µm GaN-on-SiC (QGaN15) process, enabling high breakdown voltage and thermal conductivity. Its monolithic design integrates DC blocking capacitors on both RF ports and operates with fixed gate bias (−2.8 to −2.0 V) and drain supply (24 V).

It supports pulsed RF operation (100 µs pulse width, 10% duty cycle) with matched 50 Ω input/output impedance and exhibits stable gain flatness (±0.5 dB) and return loss (>12 dB input, >15 dB output) across the full X-band.

Key Specifications

Parameter	Value and Actual Design Meaning
Frequency Range	8.0–12.0 GHz - Full X-band coverage suitable for military radar and satellite uplink bands.
Saturated Output Power	>37 dBm (≥5 W) at PIN = 12 dBm - Enables single-stage amplification to meet transmit EIRP requirements in compact arrays.
Power Added Efficiency	42% at PIN = 12 dBm - Reduces thermal load and DC power consumption in high-duty-cycle radar subsystems.
Small Signal Gain	35 dB (CW) - Provides sufficient gain margin before saturation, simplifying driver stage design.
Input/Output Return Loss	>12 dB / >15 dB - Minimizes mismatch-induced ripple and improves system-level VSWR tolerance.
Bias Conditions	VD = 24 V, IDQ = 105 mA, VG = −2.8 to −2.0 V - Fixed-voltage biasing enables simple, low-noise power supply implementation.
Thermal Resistance (θJC)	9.4–10.2 °C/W - Enables direct thermal coupling to heatsink without intermediate interface layers in conduction-cooled modules.

Pinout & Package

Package: 5 mm × 5 mm × 0.85 mm plastic overmold QFN with exposed center paddle (GND). RoHS-compliant, lead-free, MSL Level 3.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 4–15, 17–19, 21, 22, 24	NC	No internal connection; must be tied to PCB ground plane for EMI shielding and thermal conduction.
3	RF IN	50 Ω matched RF input port with integrated DC blocking capacitor - eliminates external AC coupling components.
16	RF OUT	50 Ω matched RF output port with integrated DC blocking capacitor - supports direct connection to antenna feed or filter.
20	VD	Drain supply terminal - requires local bypassing (e.g., 10 µF + 0.1 µF) per datasheet layout guidelines.
23	VG	Gate bias terminal - requires dedicated low-noise bias network and gate-stopper resistor to suppress oscillation.
25	GND	Exposed center paddle - primary thermal and electrical ground path; must be soldered to solid copper thermal pad.

Key Features

Feature	Design Value
GaN-on-SiC process technology	Enables 29.5 V absolute max drain voltage and 168.9 °C channel temperature under RF drive - supports ruggedized radar operation.
Integrated 50 Ω matching & DC blocking	Eliminates four external RF capacitors per stage, reducing BOM count and board area in multi-channel T/R modules.
Pulsed operation optimization	Validated for 100 µs / 10% duty cycle at 85 °C base temperature - meets MIL-STD-810H thermal cycling requirements for airborne radar.
Pin compatibility within family	Shares identical footprint and pinout with QPA2610 (lower power) and QPA2612 (higher gain), enabling scalable array design.
ESD protection	HBM 1A / CDM C3 rating - withstands handling in Class 1B ESD environments without additional protection circuitry.

Applications

Radar Transmitter Module	Satellite Uplink Amplifier
Use Scenario: Active electronically scanned array (AESA) radar front-end with 256+ T/R channels operating at 9.5 GHz. IC Role / Device Role / Timing Role: Final-stage power amplifier delivering ≥38 dBm POUT per channel under pulsed excitation. Use Value: 42% PAE reduces total module power draw by >30% versus GaAs alternatives, easing thermal management in confined radome space.	Use Scenario: Ka-band gateway uplink amplifier subsystem using X-band IF-to-RF translation architecture. IC Role / Device Role / Timing Role: High-linearity driver stage amplifying 10.7–12.75 GHz IF signals prior to final upconversion and transmission. Use Value: −15 dBc 3rd-order IMD at 2 dBm/tone ensures clean spectral occupancy meeting ITU-R S.465-6 mask requirements.
Point-to-Point Microwave Link	Electronic Warfare Jammer Front-End
Use Scenario: 10 Gbps licensed microwave backhaul link operating in 10.0–10.5 GHz band with adaptive modulation. IC Role / Device Role / Timing Role: Linear power amplifier supporting 256-QAM waveforms with minimal EVM degradation. Use Value: 35 dB small-signal gain and <±0.074 dB/°C gain tempco enable stable closed-loop AGC performance across −40 to +85 °C.	Use Scenario: Wideband noise jammer transmitting broadband X-band interference with rapid frequency agility. IC Role / Device Role / Timing Role: High-power broadband amplifier covering full 8–12 GHz span without tuning elements. Use Value: >15 dB output return loss ensures stable operation into variable antenna loads during frequency hopping.

Radar Transmitter Module

Satellite Uplink Amplifier

Use Scenario: Active electronically scanned array (AESA) radar front-end with 256+ T/R channels operating at 9.5 GHz.

IC Role / Device Role / Timing Role: Final-stage power amplifier delivering ≥38 dBm POUT per channel under pulsed excitation.

Use Value: 42% PAE reduces total module power draw by >30% versus GaAs alternatives, easing thermal management in confined radome space.

Use Scenario: Ka-band gateway uplink amplifier subsystem using X-band IF-to-RF translation architecture.

IC Role / Device Role / Timing Role: High-linearity driver stage amplifying 10.7–12.75 GHz IF signals prior to final upconversion and transmission.

Use Value: −15 dBc 3rd-order IMD at 2 dBm/tone ensures clean spectral occupancy meeting ITU-R S.465-6 mask requirements.

Point-to-Point Microwave Link

Electronic Warfare Jammer Front-End

Use Scenario: 10 Gbps licensed microwave backhaul link operating in 10.0–10.5 GHz band with adaptive modulation.

IC Role / Device Role / Timing Role: Linear power amplifier supporting 256-QAM waveforms with minimal EVM degradation.

Use Value: 35 dB small-signal gain and <±0.074 dB/°C gain tempco enable stable closed-loop AGC performance across −40 to +85 °C.

Use Scenario: Wideband noise jammer transmitting broadband X-band interference with rapid frequency agility.

IC Role / Device Role / Timing Role: High-power broadband amplifier covering full 8–12 GHz span without tuning elements.

Use Value: >15 dB output return loss ensures stable operation into variable antenna loads during frequency hopping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar X-band power amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
QPA2610	Same package and pinout; lower POUT (34 dBm) and PAE (38%) at 12 dBm input.	Better suited for lower-power T/R modules where thermal density is constrained.	Select when system-level EIRP budget allows 3 dB lower per-channel output and higher channel count is prioritized.
QPA2612	Same package and pinout; higher gain (38 dB) but slightly reduced PAE (40%) and narrower bandwidth (8.5–11.5 GHz).	Optimized for narrowband high-gain links such as precision tracking radar.	Choose when gain flatness and group delay stability over 1 GHz bandwidth are more critical than peak efficiency.

Compared with QPA2610 and QPA2612, the QPA2611 delivers the optimal balance of output power, efficiency, and bandwidth across the full X-band-making it the default selection for new wideband radar and satcom uplink designs requiring ≥5 W RF output.

Availability

QPA2611 is available at Aetrix Electronics and suitable for radar transmitter modules, satellite uplink amplifiers, and point-to-point microwave links requiring stable component supply, traceable lot control, and long-term production continuity.

Supply support for QPA2611 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Qorvo is a global leader in RF solutions, specializing in gallium nitride (GaN), silicon carbide (SiC), and advanced RF front-end technologies for defense, aerospace, and communications markets.

The QPA2611 belongs to Qorvo's X-band GaN power amplifier product line, engineered specifically for high-efficiency, high-reliability radar and satcom applications demanding wide instantaneous bandwidth and rugged thermal performance.

FAQ

What is the recommended gate bias voltage range for stable operation of the QPA2611?

The QPA2611 requires a gate bias voltage between −2.8 V and −2.0 V to achieve the specified quiescent drain current of 105 mA. Operating outside this range risks insufficient gain, excessive current draw, or device instability. The datasheet specifies −2.5 V as the typical setting for nominal performance, and QPA2611 evaluation boards implement adjustable gate bias networks to accommodate unit-to-unit variation.

Can the QPA2611 be used in continuous-wave (CW) mode, or is it limited to pulsed operation?

The QPA2611 is characterized and qualified for both pulsed and CW operation. Electrical specifications-including gain, PAE, and output power-are provided for CW conditions in the datasheet. However, thermal management becomes critical in CW mode due to higher average power dissipation; the device's θJC of 9.4 °C/W mandates a well-designed heatsink to maintain junction temperature below 168.9 °C. QPA2611 has been successfully deployed in CW satcom uplink amplifiers with active cooling.

Does the QPA2611 require external matching components at RF input and output?

No. The QPA2611 integrates 50 Ω impedance matching and DC blocking capacitors on both RF IN (pin 3) and RF OUT (pin 16), enabling direct connection to standard 50 Ω test equipment or system filters without external matching networks. This integration reduces layout complexity and insertion loss-verified by S-parameter measurements showing >12 dB input and >15 dB output return loss across 8–12 GHz.

How does the QPA2611 handle thermal stress in high-density phased-array radar assemblies?

The QPA2611's exposed center paddle (pin 25) provides a low-thermal-resistance path (θJC ≈ 9.4 °C/W) directly to the PCB heatsink. In production radar modules, it is mounted on thick-copper thermal vias connected to internal ground planes and external cold plates. Thermal imaging confirms channel temperatures remain within spec (<169 °C) even at 85 °C base temperature and full RF drive-enabling reliable operation in conduction-cooled AESA systems where airflow is restricted.

Is the QPA2611 pin-compatible with other devices in its amplifier family?

Yes. The QPA2611 shares identical mechanical footprint, pin count, pin assignment, and mounting dimensions with QPA2610 and QPA2612. This pin compatibility allows designers to reuse PCB layouts and thermal solutions across variants-swapping QPA2611 for QPA2610 to reduce power density or upgrading to QPA2612 for higher gain-without redesigning the physical board or changing assembly processes.

ACT4751MQI101SR Specifications

Product attributes: Attribute value

Manufacturer:: Qorvo

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Applications:: -

Current - Supply:: -

Voltage - Supply:: -

Operating Temperature:: -

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ACT4751MQI101SR FAQ

1.How can I place an order for ACT4751MQI101SR through Aetrix?

Please submit a Request for Quotation (RFQ) for ACT4751MQI101SR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ACT4751MQI101SR reliable?

The price and inventory of ACT4751MQI101SR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ACT4751MQI101SR is usually 5 days.

3.What payment methods are accepted for ACT4751MQI101SR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ACT4751MQI101SR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ACT4751MQI101SR?

ACT4751MQI101SR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ACT4751MQI101SR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ACT4751MQI101SR?

For technical support, including ACT4751MQI101SR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ACT4751MQI101SR requirements.

6.How does Aetrix verify that ACT4751MQI101SR is sourced from the original manufacturer or authorized distributors?

All ACT4751MQI101SR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ACT4751MQI101SR meets industry standards.

7.What is the process for return or replacement of ACT4751MQI101SR?

All ACT4751MQI101SR units undergo pre-shipment inspection (PSI). If there is an issue with ACT4751MQI101SR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ACT4751MQI101SR part is unused and in its original packaging.

Return procedure for ACT4751MQI101SR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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