Analog Devices Inc. ADG936BCPZ-RL

Overview

ADG936BCPZ-RL from Analog Devices is an absorptive dual SPDT RF switch optimized for high-isolation, low-loss signal routing up to 4 GHz. It operates from 1.65 V to 2.75 V, delivers 36 dB off-isolation at 1 GHz, 0.9 dB insertion loss at 1 GHz, and supports CMOS/LVTTL control logic - enabling antenna diversity switching and Tx/Rx front-end routing in compact wireless transceivers.

For engineers reviewing the ADG936BCPZ-RL datasheet, ADG936BCPZ-RL pinout, ADG936BCPZ-RL application, or ADG936BCPZ-RL equivalent, key selection criteria include its 4 mm × 4 mm LFCSP package, absorptive 50 Ω termination architecture, −40°C to +85°C industrial temperature range, and verified performance in ISM-band filter selection and digital transceiver front ends.

Technical Context

The ADG936BCPZ-RL implements two independent absorptive SPDT switches using a CMOS process, with on-chip 50 Ω shunt terminations on all RF ports to ensure matched impedance regardless of switch state. Its architecture eliminates external dc blocking capacitors and enables direct integration into 50 Ω RF signal paths without matching networks.

It features integrated CMOS control logic compatible with both CMOS and LVTTL voltage levels, supports single-supply operation from 1.65 V to 2.75 V, and achieves sub-14 ns switching times (t_ON/t_OFF) with <8 ns rise/fall times - critical for high-speed reconfiguration in time-division duplex systems.

Key Specifications

Pinout & Package

ADG936BCPZ-RL uses a 20-lead Lead Frame Chip Scale Package (LFCSP_WQ), 4 mm × 4 mm body, with exposed thermal pad tied to GND per JEDEC MO-220-WGGD-1. The package supports fine-pitch PCB assembly and provides low-inductance grounding for RF integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual SPDT RF switching applications.

Compared with ADG936BCPZ-RL, the ADG936BRUZ-REEL offers identical electrical performance but trades thermal efficiency for ease of handling, while the ADG918BCPZ-RL7 reduces integration density by half - making ADG936BCPZ-RL the optimal choice for space-constrained, thermally demanding dual-path RF systems.

Availability

ADG936BCPZ-RL is available at Aetrix Electronics and suitable for wireless communications, digital transceiver front ends, and antenna diversity switching requiring stable component supply across industrial temperature ranges and high-volume production cycles.

Supply support for ADG936BCPZ-RL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, headquartered in Norwood, MA, with design centers and manufacturing facilities worldwide.

The ADG9xx family was developed specifically for wideband RF switching in ISM-band and cellular infrastructure applications - emphasizing absorptive topology, low-voltage compatibility, and integration-ready packaging for next-generation wireless hardware.

FAQ

What is the primary RF architecture difference between ADG936BCPZ-RL and ADG936BCPZ-R-REEL?

The ADG936BCPZ-RL is the absorptive dual SPDT variant with internal 50 Ω shunt terminations on all RF ports, ensuring matched VSWR in both ON and OFF states. In contrast, ADG936BCPZ-R-REEL is the reflective version with 0 Ω shunt-to-ground, resulting in high off-port VSWR. This makes ADG936BCPZ-RL preferred for receiver-sensitive applications like antenna diversity, whereas the reflective version suits filter selection where reflection tolerance exists. Both share identical pinout and package.

Does ADG936BCPZ-RL require external dc blocking capacitors on its RF ports?

No, ADG936BCPZ-RL does not require external dc blocking capacitors. Its absorptive architecture integrates 50 Ω terminations directly at each RF port, enabling true dc-coupled operation. This eliminates insertion loss and phase shift introduced by external capacitors, simplifies layout, and improves broadband matching from DC to 4 GHz - confirmed in the ADG936/ADG936-R Rev. B datasheet Figure 13 (Return Loss).

What is the maximum RF input power ADG936BCPZ-RL can handle without compression?

ADG936BCPZ-RL has a P–1 dB compression point of 16 dBm at 1000 MHz, meaning its insertion loss increases by 1 dB when subjected to an RF input power of 16 dBm. This value is validated across the −40°C to +85°C operating range and supports direct interface with low-power PAs in Bluetooth, Wi-Fi, and sub-GHz ISM transmitters without external attenuation.

How does the LFCSP package of ADG936BCPZ-RL improve RF performance compared to TSSOP variants?

The 4 mm × 4 mm LFCSP package (CP-20-6) of ADG936BCPZ-RL provides significantly lower thermal resistance (θ_JA = 30.4°C/W on 4-layer board) versus TSSOP's 143°C/W, enabling stable RF performance under sustained switching loads. Its exposed thermal pad and shorter bond-wire paths also reduce parasitic inductance, improving isolation and return loss above 1 GHz - critical for 2.4 GHz/5.8 GHz operation.

Can ADG936BCPZ-RL operate reliably at 1.65 V supply voltage?

Yes, ADG936BCPZ-RL is fully specified and tested from 1.65 V to 2.75 V. At 1.65 V, typical insertion loss remains ≤1.25 dB at 1 GHz and off-isolation stays ≥31 dB, per Table 1 in the Rev. B datasheet. Its CMOS control logic maintains valid VINH/VINL thresholds across this range, ensuring robust switching in battery-powered or energy-harvesting systems with brown-out conditions.