Analog Devices Inc. ADG936BRU-R-REEL7

Overview

ADG936BRU-R-REEL7 from Analog Devices is an absorptive dual SPDT RF switch optimized for high-isolation, low-loss signal routing up to 4 GHz. It operates from 1.65 V to 2.75 V, delivers 36 dB off-isolation at 1 GHz, 0.9 dB insertion loss at 1 GHz, and supports CMOS/LVTTL control logic - ideal for antenna diversity switching in cellular front ends.

For engineers reviewing the ADG936BRU-R-REEL7 datasheet, ADG936BRU-R-REEL7 pinout, ADG936BRU-R-REEL7 application, or ADG936BRU-R-REEL7 equivalent, key selection criteria include its matched 50 Ω shunt termination, sub-14 ns switching times, −40°C to +85°C industrial temperature range, and TSSOP-20 package compatibility with RF layout best practices.

Technical Context

The ADG936BRU-R-REEL7 implements two independent absorptive SPDT switches using a CMOS process, each with 50 Ω terminated shunt legs to ensure stable VSWR across on/off states. Its architecture eliminates need for external dc blocking capacitors and enables direct interface with 50 Ω RF sources and loads.

Control inputs INA and INB accept CMOS- and LVTTL-compatible logic levels (VINH ≥ 1.7 V at VDD = 2.5 V; VINL ≤ 0.7 V), and internal on-board logic decodes binary states per truth table: INx = 0 routes RFCx to RF2x, INx = 1 routes RFCx to RF1x. Switching performance is specified over full −40°C to +85°C range with <1 μA quiescent current.

Key Specifications

Pinout & Package

ADG936BRU-R-REEL7 is packaged in a 20-lead TSSOP (RU-20) with exposed pad tied to GND. Pin 1 is marked by a dot; exposed pad must be soldered to PCB ground plane for thermal and RF performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switch applications.

Compared with ADG936BCPZ-R-REEL7, the ADG936BRU-R-REEL7 offers identical RF performance in a legacy-compatible TSSOP package ideal for existing layouts; versus ADG918BRUZ-REEL7, it provides synchronized dual-channel routing essential for MIMO and diversity architectures.

Availability

ADG936BRU-R-REEL7 is available at Aetrix Electronics and suitable for antenna diversity switching, cellular transceiver front ends, and high-speed filter selection requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for ADG936BRU-R-REEL7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and industrial markets since 1965.

The ADG9xx family was designed specifically for wideband RF signal routing in wireless infrastructure and handheld devices - emphasizing absorptive matching, low distortion, and single-supply operation up to 4 GHz.

FAQ

What is the difference between ADG936BRU-R-REEL7 and ADG936BRU-REEL7?

The ADG936BRU-R-REEL7 is the absorptive (matched) version with 50 Ω shunt terminations on all RF ports, ensuring stable VSWR in both on/off states. In contrast, ADG936BRU-REEL7 is the reflective variant with 0 Ω shunt-to-ground, resulting in high off-port VSWR. The "-R" suffix explicitly denotes the absorptive topology, making ADG936BRU-R-REEL7 suitable for applications requiring minimal reflections back to RF sources - such as antenna diversity and sensitive receiver front ends where impedance matching is critical.

Does ADG936BRU-R-REEL7 require external dc blocking capacitors?

No, ADG936BRU-R-REEL7 does not require external dc blocking capacitors. Its internal architecture supports direct coupling of dc-biased RF signals, enabling seamless integration with baseband ICs, mixers, and amplifiers that output or accept dc-coupled RF waveforms. This eliminates two passive components per RF path, reduces board area, and avoids capacitor-induced insertion loss or resonance issues above 1 GHz - a key advantage confirmed in the General Description and Applications sections of the Rev. B datasheet.

What is the maximum RF input power ADG936BRU-R-REEL7 can handle without compression?

ADG936BRU-R-REEL7 has a 1 dB compression point (P_–1dB) of 16 dBm at 1 GHz, meaning its insertion loss increases by 1 dB when the RF input power reaches this level. This value is guaranteed across the −40°C to +85°C operating range and applies to continuous-wave signals. For pulsed or multi-tone signals, third-order intercept (IP3) of 27.5–32 dBm provides additional linearity margin - confirming suitability for LTE and 5G NR front ends where signal crest factor exceeds 10 dB.

Can ADG936BRU-R-REEL7 operate from a 1.8 V supply?

Yes, ADG936BRU-R-REEL7 is fully specified to operate from 1.65 V to 2.75 V, including 1.8 V nominal supplies. At VDD = 1.8 V, insertion loss remains ≤1.25 dB at 1 GHz (per Table 1), off-isolation stays ≥31 dB, and control inputs meet VINH ≥ 0.65 × VDD (≥1.17 V) and VINL ≤ 0.35 × VDD (≤0.63 V). This makes ADG936BRU-R-REEL7 compatible with common low-voltage SoC I/O rails and battery-powered RF modules without level shifters or supply boosting.

Is the exposed pad on ADG936BRU-R-REEL7's TSSOP package required to be connected to ground?

Yes, the exposed pad on ADG936BRU-R-REEL7's TSSOP package must be soldered to the PCB ground plane. Per Pin Configurations section (Page 5), Note 1 states: "EXPOSED PAD TIED TO SUBSTRATE, GND." This connection is mandatory for thermal dissipation (reducing θ_JA), RF grounding (preserving isolation and return loss), and mechanical stability. Failure to connect the exposed pad risks degraded high-frequency performance, increased junction temperature, and potential long-term reliability issues - as confirmed in the Outline Dimensions and Absolute Maximum Ratings sections.