Analog Devices Inc. ADGM1002BCCZ

Overview

ADGM1002BCCZ from Analog Devices is a 0 Hz to 20 GHz, single-pole double-throw (SPDT) MEMS RF switch in a 24-lead LGA package (5.00 mm × 4.00 mm × 0.90 mm), featuring 0.6 dB typical insertion loss at 10 GHz, 28 dB isolation above 6 GHz, and integrated 3.3 V CMOS-compatible driver for parallel/SPI control. It enables high-fidelity signal routing in 5G mmWave infrastructure and high-speed digital loopback test systems.

For engineers reviewing the ADGM1002BCCZ datasheet, ADGM1002BCCZ pinout, ADGM1002BCCZ application, or ADGM1002BCCZ equivalent, this page delivers verified RF performance specs, validated switching timing, confirmed thermal and ESD ratings, and precise pin-function mapping - all specific to ADGM1002BCCZ and extracted from Analog Devices' Rev. A datasheet.

Technical Context

The ADGM1002BCCZ implements electrostatically actuated MEMS switch elements with on-chip voltage boost circuitry generating ~80 V for reliable DC-to-20 GHz switching. Its dual-mode interface supports independent parallel control (IN1/IN2) or daisy-chainable SPI (SDI/SDO/SCLK/CS), with EXTD_EN enabling external 80 V drive to eliminate internal oscillator feedthrough.

Each RF path (RF1–RFC and RF2–RFC) maintains matched on-resistance (≤1.1 Ω mismatch), low THD (–114 dBc), and stable return loss (>18 dB up to 20 GHz). The device operates across –40°C to +85°C with cold-switch lifetime ≥100 million cycles at 150 mA load.

Key Specifications

Pinout & Package

ADGM1002BCCZ uses a 24-lead land grid array (LGA) package measuring 5.00 mm × 4.00 mm × 0.90 mm, with exposed pads EP1 (AGND-connected) and EP2 (RFGND-connected) for thermal and RF grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPDT MEMS switch applications.

Compared with ADGM1001BCCZ and ADGM1003BCCZ, ADGM1002BCCZ delivers optimal trade-off between 20 GHz RF performance, ±5 V DC handling, and 150 mA switching capacity - making it the preferred choice for 5G mmWave infrastructure and high-speed ATE where bandwidth exceeds 16 GHz but does not require Ka-band extension.

Availability

ADGM1002BCCZ is available at Aetrix Electronics and suitable for 5G mmWave infrastructure, high-speed digital loopback testing, and ATE load board signal routing requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for ADGM1002BCCZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and industrial markets since 1965.

The ADGM1002BCCZ belongs to Analog Devices' MEMS switch product line, engineered specifically for broadband RF signal routing in test equipment, 5G infrastructure, and reconfigurable microwave systems - replacing electromechanical relays with solid-state reliability and speed.

FAQ

What is the maximum RF frequency supported by the ADGM1002BCCZ?

The ADGM1002BCCZ supports a guaranteed operational frequency range from DC to 20 GHz, with insertion loss specified up to 20 GHz (0.9 dB typical) and isolation maintained down to 23 dB at 20 GHz. This makes ADGM1002BCCZ suitable for 5G FR2 bands, automotive radar, and high-speed serial link testing where bandwidth beyond 16 GHz is required but Ka-band capability is unnecessary.

Does the ADGM1002BCCZ require external high-voltage circuitry for operation?

No - the ADGM1002BCCZ integrates a charge pump that generates ~80 V internally when EXTD_EN is low and VDD is applied. External high-voltage circuitry is only needed if EXTD_EN is asserted high to disable the internal oscillator and eliminate feedthrough noise; in that case, an external 80 V supply must drive the VCP pin. ADGM1002BCCZ simplifies design by eliminating discrete HV generators in most applications.

How does the ADGM1002BCCZ handle DC and RF signals simultaneously?

The ADGM1002BCCZ supports simultaneous DC and RF routing with ±5 V DC signal range and 150 mA maximum DC current, while maintaining 0.9 dB insertion loss and >23 dB isolation at 20 GHz. Its MEMS architecture ensures no RF leakage into DC bias lines and minimal harmonic generation - enabling use in DC-coupled IF stages, calibration loops, and hybrid analog-digital test fixtures where ADGM1002BCCZ routes both signal types without interference.

What is the switching lifetime specification for the ADGM1002BCCZ under real-world conditions?

The ADGM1002BCCZ guarantees ≥100 million cold-switch actuations at 150 mA load and 85°C, with continuously on lifetime rated at 10 years at 85°C. Under RF hot-switch conditions, lifetime scales inversely with power: 60 million cycles at 10 dBm, 4 million at 15 dBm. These values are measured per Analog Devices' Rev. A datasheet and apply directly to ADGM1002BCCZ - not extrapolated from other family members.

Can the ADGM1002BCCZ be used in SPI daisy-chain configurations?

Yes - the ADGM1002BCCZ supports SPI daisy-chaining via its SDI (pin 1) and SDO (pin 4) pins. When PIN is high, the device enters SPI mode; CS (pin 2) selects individual units, and SDO of one device connects to SDI of the next. Timing is guaranteed per Table 6 (t1–t13), with maximum SCLK frequency determined by t9 (40 ns). This enables compact multi-switch control in ATE and beamformer systems without additional GPIO overhead - a verified capability of ADGM1002BCCZ.