Analog Devices Inc. ADRF5023BCCZN

Overview

ADRF5023BCCZN from Analog Devices is a nonreflective silicon SPDT RF switch operating from 9 kHz to 45 GHz, with 1.7 dB typical insertion loss at 45 GHz, 42 dB typical isolation at 45 GHz, and CMOS/LVTTL-compatible control interface. It serves as a high-frequency signal path selector in millimeter-wave 5G front-ends, radar T/R modules, and test instrumentation switching matrices.

For engineers reviewing the ADRF5023BCCZN datasheet, ADRF5023BCCZN pinout, ADRF5023BCCZN application, or ADRF5023BCCZN equivalent, key selection criteria include ultra-wideband coverage up to 45 GHz, hot-switching capability of 30 dBm at RFC, nonreflective termination for impedance stability, and dual-supply (±3.3 V) operation enabling high linearity (P0.1dB = 31 dBm, IP3 = 53 dBm).

Technical Context

The ADRF5023BCCZN integrates an internal driver that interprets logic states on CTRL and EN pins to configure bidirectional RF paths between RFC and either RF1 or RF2, with all-off state enabled when EN = high. Its nonreflective architecture terminates the unselected throw port to an internal 50 Ω resistor, preserving system VSWR during switching.

It supports dual-supply operation (VDD = +3.3 V, VSS = −3.3 V) for full RF performance, or single-supply mode (VSS = GND) with derated linearity and slower settling (7.8 μs vs. 3.5 μs). All RF ports (RFC, RF1, RF2) are DC-coupled and internally 50 Ω matched, eliminating external DC blocking or matching components under 0 V DC bias conditions.

Key Specifications

Pinout & Package

The ADRF5023BCCZN is housed in a 3.0 mm × 3.0 mm, 20-terminal RoHS-compliant land grid array (LGA) package (CC-20-19), with exposed thermal pad (EPAD) requiring solder connection to PCB ground for optimal RF and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SPDT RF switch applications.

Compared with ADRF5022BCCZN and QM11036, the ADRF5023BCCZN uniquely delivers 9 kHz–45 GHz continuity, nonreflective 42 dB isolation at Ka-band, and ±3.3 V–enabled 31 dBm linearity-making it the only option for wideband test instrumentation and high-fidelity 5G/mmWave infrastructure requiring sub-100 MHz calibration and Ka-band coexistence.

Availability

ADRF5023BCCZN is available at Aetrix Electronics and suitable for 5G millimeter-wave infrastructure, phased array radar development, and automated test equipment requiring stable component supply across extended temperature (−40°C to +105°C) and full 45 GHz bandwidth.

Supply support for ADRF5023BCCZN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The ADRF5023BCCZN belongs to Analog Devices' ultra-wideband silicon RF switch product line, engineered specifically for applications demanding seamless LF-to-millimeter-wave signal routing without performance discontinuities or external matching.

FAQ

What is the minimum operating frequency of the ADRF5023BCCZN?

The ADRF5023BCCZN operates down to 9 kHz, enabling use in low-frequency instrumentation, EMC testing, and broadband calibration where sub-100 MHz continuity is essential-unlike many competing GaAs or SOI switches limited to 100 MHz or higher.

Does the ADRF5023BCCZN require external DC blocking capacitors on its RF ports?

No. The ADRF5023BCCZN's RFC, RF1, and RF2 ports are DC-coupled and internally matched to 50 Ω, so external DC blocking capacitors are unnecessary when the RF line DC potential is 0 V. Capacitors are only needed if the connected circuitry imposes non-zero DC bias.

Can the ADRF5023BCCZN operate from a single 3.3 V supply?

Yes-the ADRF5023BCCZN supports single-supply operation with VSS tied to ground, but this degrades RF performance: P0.1dB drops from 31 dBm to 16 dBm, IP3 from 53 dBm to 43 dBm, and 0.1 dB settling time increases from 3.5 μs to 7.8 μs. Dual ±3.3 V is required for full specification compliance.

What does "nonreflective" mean for the ADRF5023BCCZN?

"Nonreflective" means the ADRF5023BCCZN terminates the unselected RF throw port (RF1 or RF2) to an internal 50 Ω resistor when the switch is in either ON state. This prevents open-circuit reflection at the inactive port, maintaining system impedance match and minimizing VSWR disruption during switching-critical for sensitive receiver front-ends.

How is thermal management handled in the ADRF5023BCCZN package?

The ADRF5023BCCZN uses a 3.0 mm × 3.0 mm LGA package (CC-20-19) with an exposed thermal pad (EPAD) that must be soldered to a solid PCB ground plane. With proper layout, junction-to-case thermal resistance is 160°C/W for the through path, enabling reliable 30 dBm operation at TCASE = 85°C.