Analog Devices Inc. ADRF5048BCCZN-R7

Overview

ADRF5048BCCZN-R7 from Analog Devices is a silicon-based nonreflective SP4T RF switch designed for ultrawideband signal routing in mmWave systems. It operates from 100 MHz to 45 GHz with 1.4 dB typical insertion loss at 18 GHz, 41 dB typical isolation at 18 GHz, and supports 30 dBm RF power handling through path-enabling use in 5G mmWave base station front-ends.

For engineers reviewing the ADRF5048BCCZN-R7 datasheet, ADRF5048BCCZN-R7 pinout, ADRF5048BCCZN-R7 application, or ADRF5048BCCZN-R7 equivalent, key selection criteria include its 24-terminal LGA package, dual ±3.3 V supply requirement, CMOS/LVTTL-compatible control interface (EN, LS, V1, V2), and verified nonreflective 50 Ω architecture across full bandwidth.

Technical Context

The ADRF5048BCCZN-R7 implements a silicon-on-insulator (SOI) process-based nonreflective topology with internal 50 Ω terminations on all off-state RF paths, eliminating external matching networks. Its four RF throw ports (RF1–RF4) and common port (RFC) are DC-coupled to 0 V and internally matched, supporting bidirectional operation without DC blocking capacitors when RF line bias is 0 V.

Control logic uses four digital inputs-EN (enable), LS (logic select), V1, and V2-with truth-table-defined path selection and an all-off state when EN = high. Switching performance includes 20 ns on/off time and 60 ns 0.1 dB settling time, while ESD protection meets ±1000 V HBM on RFx pins and ±2000 V on supply/control pins.

Key Specifications

Pinout & Package

The ADRF5048BCCZN-R7 is housed in a 3 mm × 3 mm, 24-terminal RoHS-compliant land grid array (LGA) package (CC-24-14) with exposed thermal pad. The package supports coplanar waveguide routing and requires solder-mask-defined ground pads for optimal RF and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SP4T RF switch applications.

Compared with ADRF5048BCCZN-R7, the ADRF5049BCCZN-R7 offers identical footprint and control compatibility but trades 1 GHz bandwidth and marginal IL/isolation for proven maturity, while QM11036 simplifies supply design at the expense of linearity, isolation, and ESD resilience-making ADRF5048BCCZN-R7 the only option meeting full 45 GHz, 41 dB isolation, and 30 dBm hot-switching specs simultaneously.

Availability

ADRF5048BCCZN-R7 is available at Aetrix Electronics and suitable for 5G mmWave infrastructure, military radar subsystems, and high-frequency test instrumentation requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for ADRF5048BCCZN-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF integrated circuits, serving precision instrumentation, communications, industrial, and aerospace markets since 1965.

The ADRF5048BCCZN-R7 belongs to Analog Devices' ultrawideband silicon RF switch product line, engineered specifically for mmWave signal routing in next-generation wireless infrastructure, defense electronics, and automated test equipment where bandwidth, linearity, and reliability are non-negotiable.

FAQ

What is the maximum RF frequency supported by the ADRF5048BCCZN-R7?

The ADRF5048BCCZN-R7 is fully characterized and guaranteed to operate from 100 MHz to 45 GHz, with insertion loss, isolation, and return loss specifications validated across this entire band per Rev. B datasheet. At 45 GHz, typical insertion loss is 4.0 dB and isolation remains ≥35 dB-making ADRF5048BCCZN-R7 one of few silicon switches rated to Ka-band edge frequencies.

Does the ADRF5048BCCZN-R7 require external DC blocking capacitors on its RF ports?

No, the ADRF5048BCCZN-R7 does not require external DC blocking capacitors on RFC, RF1, RF2, RF3, or RF4 when the RF line DC bias is 0 V, because all RF ports are DC-coupled to ground and internally matched to 50 Ω. External DC blocking is only needed if the connected RF circuitry imposes a nonzero DC voltage on those lines-per the Theory of Operation section in the ADRF5048 datasheet.

What supply voltages does the ADRF5048BCCZN-R7 require, and why are two rails necessary?

The ADRF5048BCCZN-R7 requires +3.3 V on VDD and −3.3 V on VSS to bias its silicon-on-insulator (SOI) transistor array, enabling rail-to-rail analog signal swing and low on-resistance in both directions. This dual-supply architecture delivers superior linearity (P0.1dB >30 dBm, IP3 = 52 dBm) and prevents forward-biasing of internal ESD structures during control signal transitions-critical for mmWave signal integrity.

How does the EN (Enable) pin function in the ADRF5048BCCZN-R7 control scheme?

The EN pin on the ADRF5048BCCZN-R7 provides system-level safety override: when driven high, it forces all four RF paths into a high-isolation, internally terminated state regardless of V1/V2/LS states-effectively disconnecting RFC from all throw ports and grounding unselected paths to 50 Ω. This feature enables fail-safe shutdown during fault conditions and simplifies power sequencing in complex RF modules.

Is the ADRF5048BCCZN-R7 pin-compatible with other devices in the ADRF504x family?

Yes, the ADRF5048BCCZN-R7 is explicitly pin-compatible with ADRF5049BCCZN-R7, ADRF5042BCCZN-R7, and ADRF5043BCCZN-R7 per the General Description and Pin Configuration sections of the datasheet. Identical 24-terminal LGA footprint, supply pin locations (VDD/VSS), control pin assignments (EN/LS/V1/V2), and RF port layout allow drop-in replacement within the same PCB land pattern-facilitating design flexibility and second-source strategy.