Analog Devices Inc. ADRF5050BCCZN

Overview

ADRF5050BCCZN from Analog Devices is a nonreflective silicon SP4T RF switch operating from 100 MHz to 20 GHz, delivering 0.9 dB typical insertion loss to 6 GHz, 54 dB typical isolation to 6 GHz, and 34 dBm input P0.1dB - deployed in microwave radios, military radar front-ends, and VSAT systems requiring broadband signal routing with internal 50 Ω terminations.

For engineers reviewing the ADRF5050BCCZN datasheet, ADRF5050BCCZN pinout, ADRF5050BCCZN application, or ADRF5050BCCZN equivalent, key selection criteria include dual-supply operation (±3.3 V), 55 ns switching time, 24-terminal 3 mm × 3 mm LGA package, hot-switching capability (30 dBm at RFC), and CMOS/LVTTL-compatible control interface with EN/LS/V1/V2 logic.

Technical Context

The ADRF5050BCCZN implements a nonreflective SP4T architecture using SOI process technology, with on-chip 50 Ω terminations for all off-state RFx ports and RFC port reflection suppression. Its CMOS/LVTTL-compatible digital interface uses four control pins (EN, LS, V1, V2) to select one of four RF throw paths or force all-off state.

Dual-supply operation (VDD = +3.3 V, VSS = −3.3 V) enables full RF performance: 33 dBm through-path power handling, 1.2 dB insertion loss up to 20 GHz, and 47 dB isolation at 20 GHz. Single-supply mode (VSS = GND) maintains bias and small-signal specs but derates switching speed, linearity, and power handling per Table 2.

Key Specifications

Pinout & Package

ADRF5050BCCZN is housed in a RoHS-compliant 24-terminal land grid array (LGA) package (CC-24-16), 3 mm × 3 mm footprint, with exposed thermal pad (EPAD) requiring connection to RF/dc ground. The package supports −40°C to +105°C case temperature operation and integrates internal 50 Ω terminations for nonreflective switching.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SP4T RF switch applications.

Compared with ADRF5042BCCZN, ADRF5050BCCZN extends usable bandwidth by 7 GHz while retaining pin compatibility; versus QM11036, it eliminates external terminations and improves isolation above 12 GHz, simplifying high-frequency PCB layout at the cost of slightly lower power handling.

Availability

ADRF5050BCCZN is available at Aetrix Electronics and suitable for microwave radio transceivers, military radar T/R modules, and VSAT antenna beam switching requiring stable component supply across extended temperature ranges and high-volume production cycles.

Supply support for ADRF5050BCCZN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF integrated circuits, serving precision instrumentation, communications, and defense markets since 1965.

The ADRF5050BCCZN belongs to Analog Devices' high-frequency silicon RF switch product line, engineered for broadband nonreflective signal routing in demanding microwave and millimeter-wave systems where integration, reliability, and wideband performance are critical.

FAQ

What is the maximum RF input power the ADRF5050BCCZN can handle in dual-supply operation?

The ADRF5050BCCZN supports 33 dBm RF input power on through paths (RFC ↔ selected RFx) and 30 dBm during hot switching at the RFC port under dual-supply conditions (VDD = +3.3 V, VSS = −3.3 V) at TCASE = 85°C. These values derate by 3 dB at 105°C case temperature. Terminated path handling remains at 18 dBm regardless of temperature.

Does the ADRF5050BCCZN require external DC blocking capacitors on its RF ports?

No, the ADRF5050BCCZN does not require external DC blocking capacitors on RFC or RF1–RF4 ports when the RF line potential is at 0 V DC, because all RF ports are internally biased to ground and matched to 50 Ω. External blocking is only needed if the connected RF line operates at a non-zero DC voltage.

Can the ADRF5050BCCZN operate from a single positive supply voltage?

Yes, the ADRF5050BCCZN supports single-supply operation with VDD = +3.3 V and VSS tied to ground. However, this configuration derates switching speed (tON/tOFF = 175 ns), linearity (P0.1dB = 17 dBm), and through-path power handling (22 dBm), as specified in Table 2 of the datasheet.

How does the EN (Enable) pin function in the ADRF5050BCCZN?

The EN pin on the ADRF5050BCCZN forces all four RF paths into a high-isolation, terminated state when driven high - regardless of V1, V2, or LS logic levels. This provides fail-safe RF isolation during system reset or fault conditions, with RFC becoming reflective and all RFx ports internally terminated to 50 Ω.

Is the ADRF5050BCCZN pin-compatible with other Analog Devices RF switches?

Yes, the ADRF5050BCCZN is pin-compatible with the ADRF5042BCCZN and ADRF5043BCCZN, sharing identical 24-terminal LGA (CC-24-16) package dimensions, pin assignments, and footprint. This allows direct substitution in existing layouts where bandwidth or power requirements align.