Analog Devices Inc. ADRF5050BCCZN-R7

Overview

ADRF5050BCCZN-R7 from Analog Devices is a nonreflective silicon SP4T RF switch operating from 100 MHz to 20 GHz, designed for high-frequency signal routing in microwave front-ends. It delivers 0.9 dB typical insertion loss to 6 GHz, 54 dB typical isolation to 6 GHz, and handles +33 dBm RF power on through paths - enabling use in test instrumentation and military radar T/R modules.

For engineers reviewing the ADRF5050BCCZN-R7 datasheet, ADRF5050BCCZN-R7 pinout, ADRF5050BCCZN-R7 application, or ADRF5050BCCZN-R7 equivalent, key selection criteria include wideband isolation performance across 20 GHz, nonreflective 50 Ω terminations, dual-supply (±3.3 V) vs. single-supply trade-offs, and LGA package thermal management for high-power switching.

Technical Context

The ADRF5050BCCZN-R7 implements a CMOS/LVTTL-compatible 4-bit control interface (EN, LS, V1, V2) to select one of four RF throw ports (RF1–RF4) for connection to the RF common port (RFC), with all-off state activation via EN high. Its SOI process enables high linearity (IP3 = 55 dBm typ.) and low video feedthrough (30 mV p-p).

Nonreflective architecture integrates on-chip 50 Ω terminations at unselected RFx ports, eliminating external termination components. Switching is characterized by 55 ns on/off time and 80 ns 0.1 dB settling time under dual-supply operation, with derated performance (e.g., 175 ns tON) in single-supply mode (VSS = 0 V).

Key Specifications

Pinout & Package

The ADRF5050BCCZN-R7 is housed in a 24-terminal, 3 mm × 3 mm RoHS-compliant land grid array (LGA) package (CC-24-16), with exposed pad for thermal and RF grounding. Pin layout optimized for coplanar waveguide routing and minimal parasitic coupling.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SP4T RF switch applications.

Compared with ADRF5050BCCZN-R7, ADRF5042BCCZN-R7 offers narrower bandwidth but lower cost and longer field reliability history, while QM11036 delivers marginally better IL at the expense of added design complexity and no internal 50 Ω termination.

Availability

ADRF5050BCCZN-R7 is available at Aetrix Electronics and suitable for test instrumentation, military radar T/R modules, and VSAT communication terminals requiring stable component supply across extended temperature and high-frequency operational demands.

Supply support for ADRF5050BCCZN-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The ADRF5050 product line delivers wideband, nonreflective RF switches for demanding microwave applications - engineered for high isolation, linearity, and power handling in compact LGA packages.

FAQ

What is the maximum RF input power the ADRF5050BCCZN-R7 can handle in dual-supply operation?

The ADRF5050BCCZN-R7 supports up to +33 dBm RF input power on through paths (RFC ↔ selected RFx) and +18 dBm on terminated paths (unselected RFx) at TCASE = 85°C under dual-supply (±3.3 V) conditions. Hot-switching at RFC is rated to +30 dBm. These values derate by 3 dB at 105°C case temperature per the datasheet's power derating curves.

Does the ADRF5050BCCZN-R7 require external DC blocking capacitors on its RF ports?

No - the ADRF5050BCCZN-R7 RF ports (RFC, RF1–RF4) are DC-biased to ground potential and internally matched to 50 Ω. A DC blocking capacitor is only needed if the connected RF line operates at a DC voltage other than 0 V. This simplifies layout and reduces component count in most microwave PCB designs.

How does the EN pin function in the ADRF5050BCCZN-R7 control scheme?

The EN (Enable) pin on the ADRF5050BCCZN-R7 forces all four RF paths into a high-isolation, terminated state when driven high - regardless of LS, V1, or V2 logic levels. In this all-off mode, unselected RFx ports connect to internal 50 Ω resistors, and RFC becomes reflective. This feature enables system-level safety shutdown and prevents unintended RF leakage during configuration transitions.

Can the ADRF5050BCCZN-R7 operate from a single 3.3 V supply?

Yes - the ADRF5050BCCZN-R7 supports single-supply operation with VDD = +3.3 V and VSS tied to ground. However, small-signal performance remains intact while switching speed (tON/tOFF increases to 175 ns), linearity (P0.1dB drops to 17 dBm), and RF power handling (through path derates to 22 dBm) are significantly reduced versus dual-supply mode per Table 2 of the datasheet.

What is the thermal resistance (θJC) of the ADRF5050BCCZN-R7 package, and how does it impact layout?

The ADRF5050BCCZN-R7 has θJC = 110°C/W for through-path operation and 800°C/W for terminated-path operation, measured from junction to the exposed pad (EPAD). Effective thermal management requires soldering the EPAD to a solid PCB ground plane using multiple thermal vias - as the primary heat dissipation path is through the bottom of the LGA package, not the pins.