Analog Devices Inc. ADRF5080BCCZN

Overview

ADRF5080BCCZN from Analog Devices is a reflective silicon SP8T RF switch operating from 100 MHz to 20 GHz, delivering ≤2.0 dB insertion loss and ≥40 dB isolation across its full bandwidth. It supports dual-supply (±3.3 V) or single-supply (3.3 V/VSS = GND) operation, handles 33 dBm CW RF power in the insertion loss path, and features CMOS/LVTTL-compatible digital control (EN, LS, V1–V3) for precise RF path selection in microwave test instrumentation and radar front-ends.

For engineers reviewing the ADRF5080BCCZN datasheet, ADRF5080BCCZN pinout, ADRF5080BCCZN application, or ADRF5080BCCZN equivalent, this page provides verified specifications, LGA package layout, switching timing behavior, hot-switching capability, and validated alternative options for high-frequency RF routing systems requiring broadband performance and thermal robustness up to +105°C.

Technical Context

The ADRF5080BCCZN integrates an on-chip driver enabling CMOS/LVTTL-compatible logic control of eight RF throw ports (RF1–RF8) and one common port (RFC), with EN enabling all-off state and LS selecting active logic mapping. Its reflective architecture ensures unselected paths present high impedance without external termination.

It operates with ±3.3 V supplies for optimal linearity (P0.1dB = 33 dBm, IP3 = 55 dBm) or 3.3 V/VSS = GND for simplified biasing at reduced RF power handling (15 dBm insertion path). All RF ports are DC-coupled to 0 V and internally 50 Ω matched, eliminating need for external DC blocking or matching networks under zero-bias conditions.

Key Specifications

Pinout & Package

The ADRF5080BCCZN uses a 36-terminal land grid array (LGA) package designated CC-36-2, with 5.50 mm × 5.50 mm footprint, 0.50 mm pitch, and thermally enhanced exposed pad (EPAD) connected to PCB ground. Pin 1 is marked by a circular indicator (0.30 mm × 0.45°).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SP8T RF switch applications.

Compared with QM11036 and SW8-20DR+, the ADRF5080BCCZN uniquely delivers monolithic silicon SP8T functionality across 100 MHz–20 GHz with 55 ns speed, 33 dBm hot-switching, and LGA thermal performance-making it the only viable option for compact, high-reliability Ka-band T/R modules and automated microwave test platforms.

Availability

ADRF5080BCCZN is available at Aetrix Electronics and suitable for microwave radio transceivers, radar front-ends, and automated test equipment requiring stable component supply across extended temperature ranges and high-frequency performance consistency.

Supply support for ADRF5080BCCZN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The ADRF5080BCCZN belongs to Analog Devices' high-frequency RF switch product line, engineered specifically for broadband, high-isolation, low-distortion signal routing in next-generation radar, EW, and satellite communication systems.

FAQ

What is the maximum RF input power the ADRF5080BCCZN can handle in dual-supply mode?

The ADRF5080BCCZN supports 33 dBm continuous wave RF power in the insertion loss path and 30 dBm during hot switching when operated with ±3.3 V supplies at TCASE = 85°C. Power derating applies above 85°C and across frequency-see Figure 2 and Figure 3 in the datasheet for exact curves. These values are measured and specified in Table 1 and Absolute Maximum Ratings section.

Does the ADRF5080BCCZN require external DC blocking capacitors on its RF ports?

No, the ADRF5080BCCZN does not require external DC blocking capacitors on RF1–RF8 or RFC when the RF line potential is 0 V DC, because all RF ports are DC-coupled to 0 V and internally matched to 50 Ω. If the RF line is biased to a non-zero DC voltage, a series DC blocking capacitor must be added per the interface schematic in Figure 5 of the ADRF5080 datasheet.

Can the ADRF5080BCCZN operate with a single 3.3 V supply?

Yes, the ADRF5080BCCZN supports single-supply operation with VDD = 3.3 V and VSS tied to ground. However, small-signal performance degrades: P0.1dB drops to 18 dBm and IP3 to 37 dBm, while RF power handling reduces to 15 dBm (insertion path) and 9 dBm (hot switching). Table 2 documents these trade-offs explicitly.

What is the function of the LS pin on the ADRF5080BCCZN?

The LS (Logic Select) pin on the ADRF5080BCCZN determines which of two truth tables governs the mapping between V1/V2/V3 control inputs and active RF path selection. When LS = low, V1–V3 select RF1–RF8 in binary order; when LS = high, the sequence is inverted. This allows firmware flexibility without changing hardware connections or control logic sequencing.

How many ground pins does the ADRF5080BCCZN have, and why are they critical?

The ADRF5080BCCZN has 22 dedicated GND pins plus the EPAD, all requiring low-inductance connection to the PCB's RF and DC ground plane. These pins minimize ground loop impedance, suppress supply noise coupling into RF paths, and ensure stable switching behavior and thermal dissipation-especially critical at mmWave frequencies where parasitic inductance directly degrades isolation and return loss.