Analog Devices Inc. ADRF5080BCCZN-R7

Overview

ADRF5080BCCZN-R7 from Analog Devices is a reflective silicon SP8T RF switch operating from 100 MHz to 20 GHz, delivering ≤2.0 dB insertion loss and ≥40 dB isolation across its full bandwidth. It supports dual-supply (±3.3 V) or single-supply (3.3 V/VSS = GND) operation, handles 33 dBm CW RF power in the insertion loss path, and features 55 ns switching time - used in microwave VSATs, military radar front-ends, and automated test equipment signal routing.

For engineers reviewing the ADRF5080BCCZN-R7 datasheet, ADRF5080BCCZN-R7 pinout, ADRF5080BCCZN-R7 application, or ADRF5080BCCZN-R7 equivalent, key selection criteria include broadband isolation performance up to 20 GHz, hot-switching capability at 30 dBm, CMOS/LVTTL-compatible digital control (V1–V3, EN, LS), and LGA package thermal management for high-power RF systems.

Technical Context

The ADRF5080BCCZN-R7 implements an integrated CMOS/LVTTL driver with five digital control inputs (EN, LS, V1–V3) enabling eight selectable RF paths between RFC and RF1–RF8. Its reflective architecture ensures unselected ports present high impedance without external termination.

It operates with ±3.3 V supplies for optimal linearity (P0.1dB = 33 dBm, IP3 = 55 dBm) or 3.3 V/VSS = GND for reduced power consumption at the cost of degraded linearity (P0.1dB = 18 dBm, IP3 = 37 dBm). All RF ports (RFC, RF1–RF8) are DC-coupled to 0 V and internally 50 Ω matched, eliminating need for external DC blocking or matching networks.

Key Specifications

Pinout & Package

ADRF5080BCCZN-R7 uses a 36-terminal, 5.50 mm × 5.50 mm RoHS-compliant land grid array (LGA) package (CC-36-2) with exposed thermal pad. The package supports coplanar waveguide routing and requires solder-mask-defined ground pads per Analog Devices' PCB layout guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF switch applications.

Compared with QM11036 and JSW2-100+, the ADRF5080BCCZN-R7 uniquely delivers SP8T functionality with verified 20 GHz bandwidth, reflective termination, and LGA packaging suitable for embedded mmWave designs - making it irreplaceable for compact, high-isolation, multi-path RF routing where port count and frequency range are jointly critical.

Availability

ADRF5080BCCZN-R7 is available at Aetrix Electronics and suitable for microwave radio infrastructure, military radar subsystems, and automated test equipment requiring stable component supply across extended temperature and high-frequency performance bands.

Supply support for ADRF5080BCCZN-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The ADRF5080BCCZN-R7 belongs to Analog Devices' high-frequency RF switch product line, engineered specifically for broadband, high-isolation, and high-power signal routing in defense electronics and test instrumentation where traditional GaAs switches face thermal or integration limitations.

FAQ

What is the maximum RF input power the ADRF5080BCCZN-R7 can handle in continuous-wave operation?

The ADRF5080BCCZN-R7 supports 33 dBm continuous-wave RF power in the insertion loss path under dual-supply conditions (VDD = +3.3 V, VSS = −3.3 V) at TCASE = 85°C. At 105°C case temperature, this rating degrades by 3 dB to 30 dBm. Hot-switching capability is rated at 30 dBm under the same dual-supply conditions.

Does the ADRF5080BCCZN-R7 require external DC blocking capacitors on its RF ports?

No, the ADRF5080BCCZN-R7 does not require external DC blocking capacitors on RFC, RF1–RF8 when the RF line potential is 0 V DC. All RF ports are DC-coupled to 0 V and internally matched to 50 Ω. Capacitors are only needed if the connected RF lines operate at non-zero DC bias voltages.

Can the ADRF5080BCCZN-R7 operate from a single 3.3 V supply?

Yes, the ADRF5080BCCZN-R7 supports single-supply operation with VDD = 3.3 V and VSS tied to ground. However, this configuration reduces RF linearity: P0.1dB drops from 33 dBm to 18 dBm and IP3 from 55 dBm to 37 dBm. Insertion loss and isolation remain unchanged.

How many digital control lines does the ADRF5080BCCZN-R7 require to select all eight RF paths?

The ADRF5080BCCZN-R7 uses three digital select lines (V1, V2, V3) plus two control enablers (EN and LS) for full functionality. With EN low, V1–V3 provide 3-bit binary selection of RF1–RF8; LS inverts the truth table mapping. EN high forces all paths into isolation regardless of other inputs.

What is the thermal resistance (θJC) of the ADRF5080BCCZN-R7 package?

The ADRF5080BCCZN-R7 has a junction-to-case thermal resistance (θJC) of 130°C/W for the insertion loss path, measured from channel to package bottom under simulated conditions with the EPAD held at 85°C. Effective thermal performance depends on PCB copper area, via count, and ground plane design per Analog Devices' layout recommendations.