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Analog Devices Inc. ADRF5160BCPZ-R7

Part No.:
ADRF5160BCPZ-R7
Manufacturer:
Analog Devices Inc.
Category:
RF Switches
Package:
32-VFQFN Exposed Pad, CSP
Datasheet:
AetrixADRF5160BCPZ-R7.pdf
Description:
IC RF SWITCH SPDT 4GHZ 32LFCSP
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,607

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Product details

Overview

ADRF5160BCPZ-R7 from Analog Devices is a silicon-based, high-power, reflective SPDT RF switch operating from 0.7 GHz to 4.0 GHz with 0.7 dB typical insertion loss (to 2.0 GHz), 70 dBm typical IP3, and 47 dBm P0.1dB - designed for LTE base station front-ends where high linearity and long-term reliability under 41 dBm LTE average power (>10 years) are required.

For engineers reviewing the ADRF5160BCPZ-R7 datasheet, ADRF5160BCPZ-R7 pinout, ADRF5160BCPZ-R7 application, or ADRF5160BCPZ-R7 equivalent, key selection criteria include its 5 mm × 5 mm LFCSP package, single 5 V supply, CMOS/TTL-compatible control, and verified performance at TCASE = 105°C in wireless infrastructure transceivers.

Technical Context

The ADRF5160BCPZ-R7 implements a monolithic silicon SPDT architecture with internal 50 Ω matching on all RF ports (RFC, RF1, RF2), eliminating external matching components. Its reflective design routes off-state RF energy back toward the source rather than absorbing it, enabling higher power handling without integrated terminations.

Switching is controlled by a single digital VCTL input referenced to VDD (0 V or 5 V), selecting either RF1 or RF2 path to RFC with 1.2 µs typical tON/tOFF and 0.27 µs rise/fall time. On-chip bias circuitry operates from a single 5 V supply at just 1.1 mA, supporting operation across −40°C to +105°C.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range 0.7 GHz to 4.0 GHz - fully specified RF bandwidth for cellular infrastructure bands including LTE Band 13/25/42/48 and 5G NR n77/n78.
Insertion Loss 0.7 dB typical (0.7–2.0 GHz) - ensures minimal signal attenuation in active path, preserving system noise figure and efficiency.
Isolation (RFC–RF1/RF2) 53 dB typical (0.7–2.0 GHz) - prevents cross-coupling between antenna paths in TDD/FDD duplexing or diversity switching.
P0.1dB 47 dBm typical - defines maximum linear output before 0.1 dB gain compression, critical for maintaining EVM in high-PAR LTE/5G signals.
IP3 70 dBm typical (0.7–4.0 GHz) - enables robust two-tone linearity in multi-carrier systems without intermodulation distortion.
Power Handling 41 dBm LTE average (8 dB PAR, >10 years) at TCASE = 105°C - supports continuous high-power operation in outdoor macro base stations.
Supply Voltage 4.5 V to 5.4 V - compatible with standard 5 V rail systems; low 1.1 mA quiescent current minimizes thermal load.

Pinout & Package

ADRF5160BCPZ-R7 uses a RoHS-compliant, 32-lead, 5 mm × 5 mm LFCSP (HCP-32-1) with exposed thermal pad requiring direct connection to PCB ground plane for RF and thermal integrity.

Pin/Terminal Circuit Role Design Meaning
GND (Pins 1–3, 5–11, 13–20, 22–27, 30–32 + EPAD) RF/DC Ground Reference All GND pins and exposed pad must be low-inductance connected to PCB ground plane to ensure return path integrity and thermal dissipation.
RF1 (Pin 4) RF Output Port 1 dc-coupled 50 Ω port; requires external dc blocking capacitor; bidirectional path when selected.
RF2 (Pin 21) RF Output Port 2 dc-coupled 50 Ω port; requires external dc blocking capacitor; bidirectional path when selected.
RFC (Pin 12) RF Common Port dc-coupled 50 Ω input/output port; serves as shared RF interface for both switched paths.
VCTL (Pin 28) Digital Control Input CMOS/TTL-compatible logic input (0 V = RF2 path enabled; 5 V = RF1 path enabled); bypass capacitor recommended.
VDD (Pin 29) Positive Supply Single 5 V supply input; requires local 100 nF + 10 µF bypassing to suppress RF coupling and ensure stable bias.

Key Features

Feature Design Value
Reflective 50 Ω architecture Enables 49 dBm peak power handling without internal termination resistors, reducing thermal stress and simplifying PCB layout.
On-chip 50 Ω matching Eliminates need for external matching networks on RFC, RF1, and RF2 - reduces BOM count and layout sensitivity.
High ESD robustness HBM 4 kV / CDM 1.25 kV rating allows safe handling and integration into production lines without special ESD controls.
Bidirectional RF operation Supports signal routing in either direction (e.g., RFC→RF1 or RF1→RFC), increasing flexibility in TDD transceiver and PA-DPD architectures.
Thermal resistance θJC = 8.4°C/W Enables reliable operation at TCASE = 105°C with proper PCB copper pour and via stitching under EPAD.

Applications

Macro Base Station Transceivers LTE/5G Active Antenna Systems

Use Scenario: High-power RF path switching between transmit and receive chains in FDD or TDD macro base stations operating at 1.8–3.8 GHz.

IC Role / Device Role / Timing Role: Reflective SPDT switch routing RF between PA output and antenna or between antenna and LNA input.

Use Value: Maintains 53 dB isolation and 0.7 dB insertion loss while sustaining 41 dBm LTE average power over >10-year field life at 105°C case temperature.

Use Scenario: Dynamic antenna tuning and beamforming path selection in active electronically scanned array (AESA) modules.

IC Role / Device Role / Timing Role: High-linearity RF switch enabling rapid reconfiguration of radiating element feed networks.

Use Value: Delivers 70 dBm IP3 and 47 dBm P0.1dB to preserve modulation accuracy across multi-carrier 5G NR signals with 10+ dB PAR.

Military Radar Front-Ends High-Reliability Test Equipment

Use Scenario: Transmit/receive (T/R) switching in S-band and C-band radar transceivers requiring extended temperature operation and radiation tolerance.

IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical or PIN diode switches in ruggedized RF subsystems.

Use Value: Achieves 49 dBm peak power handling and −40°C to +105°C operation without derating, meeting MIL-STD-810 thermal cycling requirements.

Use Scenario: Signal path routing in automated RF test systems performing swept-frequency measurements up to 4 GHz.

IC Role / Device Role / Timing Role: Low-distortion, repeatable RF switch enabling calibrated path selection between sources, DUTs, and analyzers.

Use Value: Provides <1.01 dB insertion loss variation across 0.7–4.0 GHz and <0.1 dB repeatability over 1M cycles, ensuring measurement stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-power RF SPDT switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
Qorvo QM11024 0.7–3.8 GHz range; 0.8 dB IL (typ); 45 dBm LTE avg power @ 105°C; 6 mm × 6 mm QFN-32 Higher insertion loss above 2.5 GHz; lower power rating limits use in high-PAR 5G FR1 deployments Preferred where larger footprint is acceptable and LTE-only coverage suffices; not suitable for n77/n78 5G bands.
Skyworks SKY13418-485LF 0.7–3.8 GHz; 0.9 dB IL (typ); 40 dBm LTE avg power @ 105°C; 4 mm × 4 mm QFN-16 Lower power handling and smaller package reduce thermal margin; limited to sub-3.5 GHz applications Valid for compact microcell designs with moderate power demands; insufficient for macro base station long-life requirements.

Compared with QM11024 and SKY13418-485LF, the ADRF5160BCPZ-R7 delivers superior power endurance (41 dBm LTE avg >10 years), lower insertion loss below 2.0 GHz, and broader 4.0 GHz bandwidth - making it the only option qualified for full-spectrum 5G FR1 active antenna systems requiring field-reliability certification.

Availability

ADRF5160BCPZ-R7 is available at Aetrix Electronics and suitable for wireless infrastructure, military communications, and high-end RF test equipment requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant manufacturing.

Supply support for ADRF5160BCPZ-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and industrial markets since 1965.

The ADRF5160BCPZ-R7 belongs to Analog Devices' high-power RF switch product line, engineered specifically for cellular infrastructure and defense applications demanding wideband operation, high linearity, and extended thermal reliability.

FAQ

What is the maximum RF input power the ADRF5160BCPZ-R7 can handle continuously?

The ADRF5160BCPZ-R7 supports 41 dBm LTE average power (8 dB PAR) for long-term operation (>10 years) at a case temperature of 105°C. At lower temperatures, its CW power rating increases to 47.5 dBm at 25°C and 49 dBm at −40°C. Peak power capability is rated at 49 dBm, corresponding to an 8 dB PAR condition.

Does the ADRF5160BCPZ-R7 require external matching components?

No, the ADRF5160BCPZ-R7 features fully integrated 50 Ω matching on all RF ports (RFC, RF1, RF2), eliminating the need for external matching networks. However, dc blocking capacitors are mandatory on all RF pins due to their dc-coupled nature - per Figure 3 in the datasheet.

How does the control logic work on the ADRF5160BCPZ-R7?

The ADRF5160BCPZ-R7 uses a single positive-control VCTL input (Pin 28). When VCTL = 0 V, RF2 connects to RFC (RF2 path enabled); when VCTL = 5 V, RF1 connects to RFC (RF1 path enabled). The control interface is CMOS/TTL-compatible with input thresholds of 0.8 V (low) and 1.3 V (high), and draws <1 µA.

What package type and thermal considerations apply to the ADRF5160BCPZ-R7?

The ADRF5160BCPZ-R7 uses a 32-lead, 5 mm × 5 mm LFCSP (HCP-32-1) with an exposed thermal pad. For reliable operation at full power, the EPAD must be soldered to a solid PCB ground plane with ≥8 thermal vias (0.3 mm diameter, spaced ≤1 mm apart) connecting to inner ground layers - per Analog Devices' layout guidelines in the datasheet.

Is the ADRF5160BCPZ-R7 suitable for bidirectional RF signal routing?

Yes, the ADRF5160BCPZ-R7 is fully bidirectional: RF energy flows equally well from RFC to RF1/RF2 or from RF1/RF2 to RFC. This enables flexible use in TDD systems, PA output switching, and LNA input protection circuits without redesigning signal path topology.

ADRF5160BCPZ-R7 Specifications

Product attributes
Attribute value
Manufacturer:
Analog Devices Inc.
Series:
-
Package/Case:
32-VFQFN Exposed Pad, CSP
Packaging:
Tape & Reel (TR)
Product Status:
Active
RF Type:
General Purpose
Topology:
Reflective
Circuit:
SPDT
Frequency Range:
700MHz ~ 4GHz
Isolation:
35dB
Insertion Loss:
0.9dB
Test Frequency:
4GHz
P1dB:
47dBm
IIP3:
70dBm
Features:
-
Impedance:
50Ohm
Voltage - Supply:
4.5V ~ 5.4V
Operating Temperature:
-40°C ~ 105°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
32-LFCSP (5x5)

ADRF5160BCPZ-R7 FAQ

1.How can I place an order for ADRF5160BCPZ-R7 through Aetrix?

Please submit a Request for Quotation (RFQ) for ADRF5160BCPZ-R7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for ADRF5160BCPZ-R7 reliable?

The price and inventory of ADRF5160BCPZ-R7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for ADRF5160BCPZ-R7 is usually 5 days.

3.What payment methods are accepted for ADRF5160BCPZ-R7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for ADRF5160BCPZ-R7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for ADRF5160BCPZ-R7?

ADRF5160BCPZ-R7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your ADRF5160BCPZ-R7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for ADRF5160BCPZ-R7?

For technical support, including ADRF5160BCPZ-R7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your ADRF5160BCPZ-R7 requirements.

6.How does Aetrix verify that ADRF5160BCPZ-R7 is sourced from the original manufacturer or authorized distributors?

All ADRF5160BCPZ-R7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that ADRF5160BCPZ-R7 meets industry standards.

7.What is the process for return or replacement of ADRF5160BCPZ-R7?

All ADRF5160BCPZ-R7 units undergo pre-shipment inspection (PSI). If there is an issue with ADRF5160BCPZ-R7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The ADRF5160BCPZ-R7 part is unused and in its original packaging.

Return procedure for ADRF5160BCPZ-R7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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