Analog Devices Inc. ADRF5716BCCZN-R7

Overview

ADRF5716BCCZN-R7 from Analog Devices is a silicon-based 2-bit digital RF attenuator operating from 100 MHz to 30 GHz, delivering 48 dB attenuation range in precise 16 dB steps, with insertion loss of 1.6 dB at 8 GHz and ±0.25 + 3.6% attenuation accuracy up to 8 GHz - deployed in 5G mmWave base station front-ends for dynamic gain control.

For engineers reviewing the ADRF5716BCCZN-R7 datasheet, ADRF5716BCCZN-R7 pinout, ADRF5716BCCZN-R7 application, or ADRF5716BCCZN-R7 equivalent, key selection criteria include ultra-wideband frequency coverage, dual-supply vs. single-supply trade-offs, RF amplitude settling time (130 ns typical), and LGA package thermal management for high-power millimeter-wave systems.

Technical Context

The ADRF5716BCCZN-R7 implements a fixed 2-bit attenuator array with parallel CMOS/LVTTL-compatible control via D5 (LSB) and D6 (MSB), latched by LE. Its architecture supports glitch-free state transitions and bidirectional RF operation with matched 50 Ω ATTIN/ATTOUT ports.

It operates from −40°C to +105°C using either dual supplies (VDD = +3.3 V, VSS = −3.3 V) or single supply (VDD = +3.3 V, VSS = GND), with performance degradation in P0.1dB (21 dBm) and IP3 (35–36 dBm) under single-supply mode - critical for test instrumentation vs. infrastructure deployment decisions.

Key Specifications

Pinout & Package

ADRF5716BCCZN-R7 uses a 20-terminal, 3.00 mm × 3.00 mm RoHS-compliant land grid array (LGA) package (package option CC-20-9) with exposed thermal pad for PCB-level heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF attenuator applications.

Compared with HMC624LP4E and PE43711, the ADRF5716BCCZN-R7 uniquely balances 30 GHz bandwidth, 48 dB range, 30 dBm power handling, and parallel CMOS control - making it optimal for 5G FR2 and defense EW systems where wideband linearity and speed outweigh resolution or interface flexibility.

Availability

ADRF5716BCCZN-R7 is available at Aetrix Electronics and suitable for 5G millimeter wave infrastructure, military radar front-ends, and automated test equipment requiring stable component supply across extended temperature ranges and high-volume production cycles.

Supply support for ADRF5716BCCZN-R7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices, Inc. is a global leader in high-performance analog, mixed-signal, and RF ICs, serving precision instrumentation, communications, and defense markets since 1965.

The ADRF5716BCCZN-R7 belongs to Analog Devices' high-frequency silicon RF switch and attenuator product line, designed specifically for wideband, high-linearity, and fast-settling applications in 5G, radar, and test instrumentation systems.

FAQ

What is the operating temperature range for the ADRF5716BCCZN-R7?

The ADRF5716BCCZN-R7 is rated for operation from −40°C to +105°C case temperature. This extended range supports deployment in outdoor 5G base stations and airborne radar systems where ambient conditions exceed commercial limits. Thermal derating applies above 85°C case temperature, reducing RF power handling by 3 dB at 105°C per Analog Devices' specifications.

Does the ADRF5716BCCZN-R7 require external DC blocking capacitors on its RF ports?

No, the ADRF5716BCCZN-R7 features DC-coupled ATTIN and ATTOUT ports internally matched to 50 Ω, eliminating the need for external DC blocking capacitors - provided the RF line DC potential is 0 V. This simplifies layout in baseband and IF signal chains and avoids capacitor-induced phase discontinuities at mmWave frequencies.

Can the ADRF5716BCCZN-R7 operate from a single positive supply?

Yes, the ADRF5716BCCZN-R7 supports single-supply operation with VDD = +3.3 V and VSS tied to ground. However, this mode degrades P0.1dB to 21 dBm and IIP3 to 35–36 dBm, and increases RF amplitude settling time to 400 ns. Dual-supply operation (VDD = +3.3 V, VSS = −3.3 V) is recommended for full-spec performance in high-linearity applications.

What is the pin configuration and package type of the ADRF5716BCCZN-R7?

The ADRF5716BCCZN-R7 uses a 20-terminal land grid array (LGA) package measuring 3.00 mm × 3.00 mm (package option CC-20-9), with an exposed thermal pad (EPAD) and pins including ATTIN, ATTOUT, VDD, VSS, LE, D5, D6, and 11 dedicated GND terminals. The LGA footprint requires solder paste stencil design matching the pad layout in Analog Devices' outline drawing CC-20-9.

How does the ADRF5716BCCZN-R7 achieve glitch-free attenuation state transitions?

The ADRF5716BCCZN-R7 achieves glitch-free operation through its latched parallel interface: D5 and D6 control bits are held stable while LE is low, then LE is pulsed high to transfer the state into the attenuator array's bypass switches. This decouples control updates from RF path switching, preventing transient mismatch or momentary open-circuit conditions that could cause RF glitches in sensitive TDD or radar systems.