Texas Instruments ADS8413IBRGZR

Overview

ADS8413IBRGZR from Texas Instruments is a 16-bit, 2-MSPS SAR analog-to-digital converter with unipolar differential input range (–4 V to +4 V), 4-V internal reference, and 200-Mbps LVDS serial interface. It delivers 92 dB SNR and –107 dB THD at 10 kHz, enabling high-fidelity data acquisition in medical instrumentation and closed-loop control systems.

For engineers reviewing the ADS8413IBRGZR datasheet, ADS8413IBRGZR pinout, ADS8413IBRGZR application, or ADS8413IBRGZR equivalent, key selection criteria include zero-latency operation at full speed, nap mode power reduction (125 mW), ±2 LSB INL max, 48-pin QFN package compatibility, and daisy-chainable LVDS interface timing.

Technical Context

The ADS8413IBRGZR implements a capacitor-based SAR architecture with integrated sample-and-hold, supporting back-to-back conversions at 2 MSPS without latency. Its LVDS interface operates at 190–210 MHz with selectable 16-/8-bit frame modes and supports daisy-chain or cascade configurations via SYNC_O/SDO/CLK_O signaling.

It features dual power domains (+VA = 5 V for analog core, +VBD = 3.3 V or 5 V for LVDS/CMOS I/O), internal reference buffer, and configurable nap/power-down states. Timing-critical operations-including CONVST-triggered sampling, BUS_BUSY synchronization, and RD-initiated read cycles-are defined with nanosecond-level precision across temperature.

Key Specifications

Pinout & Package

ADS8413IBRGZR is housed in a 48-pin QFN package (RGZ) with exposed thermal pad, optimized for low-inductance analog grounding and high-speed LVDS signal integrity. Pin assignments support separate analog/digital ground planes (AGND/BDGND), dual supply domains (+VA/+VBD), and differential LVDS I/O pairs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SAR ADC applications.

Compared with ADS8412IBRGZR, ADS8413IBRGZR offers superior THD (–107 dB vs –105 dB) and integrated reference buffering but lacks true bipolar input support; compared with ADS8402IBRGZR, it delivers 2-bit higher resolution and 7 dB better SNR at modest power increase-making it optimal for metrology-grade acquisition where amplitude fidelity is non-negotiable.

Availability

ADS8413IBRGZR is available at Aetrix Electronics and suitable for medical instrumentation, industrial motor control, communications baseband receivers, and high-speed data acquisition systems requiring stable component supply and long-term production continuity.

Supply support for ADS8413IBRGZR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog and embedded processing technologies, with decades of expertise in precision data converters and high-speed interface solutions.

The ADS8413IBRGZR belongs to TI's high-speed SAR ADC family designed for applications demanding zero-latency, low-power, and daisy-chainable digital interfaces-targeting medical, industrial, and communications systems where timing determinism and signal fidelity are critical.

FAQ

What is the absolute maximum input voltage range for ADS8413IBRGZR?

The ADS8413IBRGZR supports an absolute input voltage range of –0.2 V to (Vref + 0.2 V) on both +IN and –IN pins, with Vref = 4.096 V nominal. This yields –0.2 V to +4.296 V per input, referenced to AGND. Exceeding these limits risks permanent damage per the device's absolute maximum ratings table.

Does ADS8413IBRGZR require an external reference voltage?

No, ADS8413IBRGZR includes a 4.096 V internal reference with 36 ppm/°C drift and 25 ms start-up time. External reference is optional via REFIN pin (3.9–4.2 V range); when used, REFOUT must be disconnected from REFIN. The internal reference eliminates external component dependency unless tighter drift or faster settling is required.

How does nap mode reduce power consumption in ADS8413IBRGZR?

ADS8413IBRGZR nap mode reduces supply current from 64 mA (290 mW at 2 MSPS) to 25 mA (125 mW) between conversions while retaining full wake-up readiness. It is enabled via the NAP pin and maintains internal bias states-allowing immediate resumption of sampling without reference re-stabilization delays.

Can ADS8413IBRGZR operate with a 3.3-V I/O supply?

Yes, ADS8413IBRGZR supports +VBD = 3.3 V (±10%) for all CMOS and LVDS I/O circuits. LVDS output specifications-including 247–454 mV differential voltage and 1.125–1.375 V common-mode level-are guaranteed at 3.3 V. Conversion timing (e.g., 391 ns conversion time) remains valid across the 3.3 V and 5 V +VBD ranges.

What is the purpose of the LAT_Y/N pin on ADS8413IBRGZR?

The LAT_Y/N pin configures ADS8413IBRGZR for zero-latency (LAT_Y/N = 0) or latency-enabled (LAT_Y/N = 1) read operation. In zero-latency mode, data is available immediately after conversion completion-essential for back-to-back sampling at 2 MSPS. In latency mode, data is buffered, allowing asynchronous read timing but adding one-cycle delay.