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NXP Semiconductors AFT05MP075GNR1
- Part No.:
- AFT05MP075GNR1
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- TO-270BB
- Datasheet:
-
AFT05MP075GNR1.pdf
- Description:
- RF MOSFET LDMOS 12.5V TO270-4
- Quantity:
- Payment:
- Shipping:
Inventory:3,169
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Product details
Overview
AFT05MP075GNR1 from NXP Semiconductors (formerly Freescale) is a dual-channel 75 W RF power LDMOS transistor optimized for mobile two-way radio amplifiers operating from 136 to 520 MHz. It delivers 75 W output power at 450–520 MHz with 14.6 dB gain and 65.8% drain efficiency at 12.5 V, features integrated ESD protection (HBM Class 2), and uses TO-270WBG-4 gull-wing surface-mount packaging for thermal reliability in VHF/UHF base station and portable radio final stages.
For engineers reviewing the AFT05MP075GNR1 datasheet, AFT05MP075GNR1 pinout, AFT05MP075GNR1 application, or AFT05MP075GNR1 equivalent, key selection criteria include ruggedness under >65:1 VSWR load mismatch at 520 MHz, thermal resistance of 0.29 °C/W (junction-to-case), dual-gate/dual-drain configuration for balanced amplifier designs, and compatibility with 44 mm tape-and-reel handling (R1 suffix = 500 units).
Technical Context
This device is a high-ruggedness, enhancement-mode lateral MOSFET with unmatched input/output ports enabling broadband operation across VHF and UHF bands. Its dual-channel architecture supports common-source push-pull or parallel configurations, and integrated stability enhancements eliminate need for external neutralization networks in production circuits.
Thermal design is enabled by direct-source-to-heatsink mounting via exposed backside (source terminal), validated for continuous-wave operation up to TJ = +225 °C. The device sustains no degradation under 3 dB overdrive at 17 VDD with 2 W input into >65:1 VSWR loads at 520 MHz - confirming suitability for demanding mobile radio PA stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 136–520 MHz - fully characterized and validated across VHF and UHF bands for mobile radio transmitters. |
| Output Power (Pout) | 75 W CW at 450–520 MHz - enables single-device UHF base station output stage without combining. |
| Power Gain (Gps) | 14.6 dB at 485 MHz - reduces driver-stage complexity and improves system-level efficiency. |
| Drain Efficiency (ηD) | 65.8% at 450–520 MHz - lowers thermal load and DC power consumption in battery- or vehicle-powered radios. |
| Thermal Resistance (RθJC) | 0.29 °C/W - allows high-power operation with moderate heatsinking; junction temperature rise <21°C at 75 W dissipation. |
| VSWR Ruggedness | >65:1 at all phase angles, 520 MHz - survives antenna mismatch events without degradation in field-deployed radios. |
| ESD Protection | HBM Class 2 (2500 V), MM Class A (250 V), CDM Class IV (2000 V) - eliminates need for external ESD clamps in PCB layout. |
Pinout & Package
Package: TO-270WBG-4 gull-wing surface-mount package with exposed source tab on backside (electrically connected to source terminals). Dimensions per Freescale Issue E outline; 44 mm tape width, 13-inch reel (R1 suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A | Channel A drain connection | High-current RF output node; requires low-inductance path to output matching network and heatsink. |
| Drain B | Channel B drain connection | Enables parallel or push-pull operation; both drains share same thermal path via exposed backside. |
| Gate A | Channel A gate control | RF input node; requires stable bias and impedance-matched drive to prevent oscillation. |
| Gate B | Channel B gate control | Independent gate control allows differential drive or separate biasing for asymmetry compensation. |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched broadband I/O | Eliminates internal matching components - simplifies external circuit design across 136–520 MHz. |
| Integrated stability enhancements | Prevents parasitic oscillation without external neutralization capacitors or resistors. |
| High linearity for TETRA/SSB/LTE | Supports multi-tone and modulated signals with low ACPR - verified in narrowband and broadband test fixtures. |
| Extreme ruggedness | Survives >65:1 VSWR at full power - critical for mobile radios with dynamic antenna coupling. |
| Thermally optimized package | 0.29 °C/W RθJC enables compact heatsink designs while maintaining TJ ≤ +225 °C at full rated power. |
Applications
| Output Stage VHF Band Mobile Radio | Output Stage UHF Band Mobile Radio |
|---|---|
Use Scenario: Final RF power amplifier in land-mobile radios operating at 136–174 MHz (VHF low-band) with stringent size and thermal constraints. IC Role / Device Role / Timing Role: Dual-channel LDMOS transistor delivering 76 W Pout at 136 MHz with 21.0 dB gain and 68.0% efficiency. Use Value: Single-device solution replaces combiner-based architectures, reducing bill-of-materials and PCB area by >30%. |
Use Scenario: High-efficiency final stage in public safety UHF radios (450–520 MHz) requiring robust operation under antenna detuning. IC Role / Device Role / Timing Role: Common-source amplifier delivering 75 W Pout with 14.6 dB gain and 65.8% efficiency in Freescale's UHF broadband reference circuit. Use Value: >65:1 VSWR tolerance ensures uninterrupted transmission during vehicular antenna movement or environmental obstruction. |
| Base Station Transmitter Module | TETRA Digital Trunking System |
Use Scenario: Compact 70 W transmitter module for remote repeater sites where cooling airflow is limited. IC Role / Device Role / Timing Role: Primary RF power device operating at 520 MHz with 70 W Pout, 18.5 dB gain, and 68.5% efficiency in narrowband test fixture. Use Value: 0.29 °C/W thermal resistance enables passive heatsinking - eliminating fan noise and failure points. |
Use Scenario: Linear PA stage in TETRA infrastructure equipment requiring low adjacent channel power ratio (ACPR) under 16-QAM modulation. IC Role / Device Role / Timing Role: High-linearity LDMOS transistor supporting TETRA-compliant spectral mask with integrated stability enhancements. Use Value: Verified linearity performance eliminates need for digital predistortion (DPD) in cost-sensitive Tier-2 deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2750HR5 | Higher Pout (750 W), higher VDD (32 V), TO-272-2 package - not pin-compatible; requires redesign of bias and matching networks. | Targeted at macro base stations (>100 W), not mobile radio form factors. | Select when scaling to multi-hundred-watt infrastructure; avoid for space-constrained portable radios. |
| PD85003S | Single-channel 30 W LDMOS, SO-8 package, 136–960 MHz - lower power, different footprint, no gull-wing leads. | Suitable for low-power handheld radios or driver stages, not final PA replacement. | Choose only for cost-sensitive, low-power applications where 75 W capability is unnecessary. |
Compared with MRF6VP2750HR5 and PD85003S, the AFT05MP075GNR1 uniquely balances 75 W output, VHF/UHF broadband coverage, gull-wing thermal interface, and >65:1 VSWR ruggedness - making it irreplaceable for mid-power mobile radio final stages without layout or voltage rail changes.
Availability
AFT05MP075GNR1 is available at Aetrix Electronics and suitable for VHF/UHF mobile radio transmitters, public safety repeater systems, and TETRA infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial deployment.
Supply support for AFT05MP075GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues to support the Airfast RF power portfolio for wireless infrastructure and industrial communications.
The AFT05MP075GNR1 belongs to the Airfast family of high-ruggedness LDMOS transistors designed specifically for mobile two-way radio applications demanding reliability under extreme VSWR conditions and wideband efficiency.
FAQ
What is the maximum junction temperature rating for the AFT05MP075GNR1?
The AFT05MP075GNR1 has an operating junction temperature range of –40 to +225 °C, validated for continuous-wave operation at full rated power. This rating is confirmed in Table 1 of the datasheet and supported by MTTF modeling tools available on NXP's RF portal. Thermal derating begins above 25 °C case temperature at 3.45 W/°C.
Does the AFT05MP075GNR1 require external neutralization for stability?
No, the AFT05MP075GNR1 incorporates integrated stability enhancements that eliminate the need for external neutralization capacitors or resistors. This is explicitly stated in the Features section and validated across both narrowband (520 MHz) and broadband (450–520 MHz) test circuits in the datasheet.
What is the gate threshold voltage range for the AFT05MP075GNR1?
The gate threshold voltage (VGS(th)) for the AFT05MP075GNR1 is specified as 1.7–2.5 Vdc at VDS = 10 Vdc and ID = 295 µAdc, with a typical value of 2.1 Vdc. This parameter is listed in Table 5 of the datasheet and applies to each channel independently.
How does the AFT05MP075GNR1 differ from the AFT05MP075NR1 variant?
The AFT05MP075GNR1 uses a gull-wing leadform (TO-270WBG-4), while the AFT05MP075NR1 uses straight leads (TO-270WB-4). Both share identical electrical specifications, thermal performance, and ruggedness ratings. The G-suffix denotes the surface-mount gull-wing configuration required for automated assembly.
Is the AFT05MP075GNR1 suitable for LTE signal amplification?
Yes, the AFT05MP075GNR1 is characterized for high linearity in LTE applications, as confirmed in the Features section ("High Linearity for: TETRA, SSB, LTE"). Its broadband gain flatness and low ACPR performance in 450–520 MHz reference circuits validate its use in LTE band 13/14/25/26 infrastructure transmitters.
AFT05MP075GNR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-270BB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 520MHz
- Gain:
- 18.5dB
- Voltage - Test:
- 12.5 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 400 mA
- Power - Output:
- 70W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-270 WB-4 Gull
AFT05MP075GNR1 FAQ
1.How can I place an order for AFT05MP075GNR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT05MP075GNR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT05MP075GNR1 reliable?
The price and inventory of AFT05MP075GNR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT05MP075GNR1 is usually 5 days.
3.What payment methods are accepted for AFT05MP075GNR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT05MP075GNR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT05MP075GNR1?
AFT05MP075GNR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT05MP075GNR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT05MP075GNR1?
For technical support, including AFT05MP075GNR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT05MP075GNR1 requirements.
6.How does Aetrix verify that AFT05MP075GNR1 is sourced from the original manufacturer or authorized distributors?
All AFT05MP075GNR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT05MP075GNR1 meets industry standards.
7.What is the process for return or replacement of AFT05MP075GNR1?
All AFT05MP075GNR1 units undergo pre-shipment inspection (PSI). If there is an issue with AFT05MP075GNR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT05MP075GNR1 part is unused and in its original packaging.
Return procedure for AFT05MP075GNR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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