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NXP Semiconductors AFT05MP075N-54M
- Part No.:
- AFT05MP075N-54M
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
AFT05MP075N-54M.pdf
- Description:
- RF MOSFET
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Product details
Overview
AFT05MP075N-54M from NXP Semiconductors (formerly Freescale) is a high-ruggedness, 75 W broadband RF power LDMOS transistor designed for common-source amplifier stages in mobile two-way radio equipment operating from 136 to 520 MHz. It delivers 75 W output power at 450–520 MHz with 14.6 dB power gain and 65.8% drain efficiency at 12.5 V DC, supporting TETRA, SSB, and LTE modulation schemes.
For engineers reviewing the AFT05MP075N-54M datasheet, AFT05MP075N-54M pinout, AFT05MP075N-54M application, or AFT05MP075N-54M equivalent, this page provides verified package mapping (TO-270WB-4), validated dual-drain/dual-gate terminal roles, confirmed ruggedness rating (>65:1 VSWR at 520 MHz CW), thermal resistance (0.29 °C/W), and ESD protection class (HBM 2500 V, MM 250 V).
Technical Context
This device is a dual-gate, dual-drain enhancement-mode lateral MOSFET with unmatched input/output ports optimized for broadband operation across VHF and UHF bands. Its internal structure supports balanced push-pull configurations, with gate and drain terminals electrically isolated per side and source tied to the exposed backside metal tab.
Thermal design centers on low junction-to-case resistance (0.29 °C/W) enabling stable 75 W CW operation at TC = 80 °C, while integrated ESD protection (HBM Class 2, MM Class A) and stability enhancements eliminate need for external gate protection or neutralization networks in standard reference circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 136–520 MHz - fully characterized and validated for broadband mobile radio amplification without retuning. |
| Output Power (Pout) | 75 W CW at 450–520 MHz - enables single-device UHF base station or repeater final stage without combining. |
| Power Gain (Gps) | 14.6 dB at 485 MHz - reduces driver stage complexity and improves system-level small-signal linearity. |
| Drain Efficiency (ηD) | 65.8% at 450–520 MHz - lowers thermal load and power supply requirements in battery- or vehicle-powered radios. |
| Junction Temp Limit | +225 °C - supports high-reliability operation under sustained overdrive or mismatched load conditions. |
| VSWR Ruggedness | >65:1 at all phase angles, 520 MHz CW - survives antenna detuning, cable faults, or switch failures without degradation. |
| Thermal Resistance | 0.29 °C/W (RθJC) - allows direct mounting to heatsink with minimal thermal interface resistance for compact RF PA designs. |
Pinout & Package
Package: TO-270WB-4 - over-molded plastic package with four exposed source tabs on the underside and gull-wing leads for surface-mount assembly. Exposed backside metal is electrically connected to source terminals for low-inductance grounding and thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain A | Primary RF power output node (Side A) | Carries half the total RF current; requires symmetric layout and impedance matching to maintain balance in push-pull operation. |
| Drain B | Primary RF power output node (Side B) | Electrically isolated from Drain A; used with Drain A for differential or parallel output configurations. |
| Gate A | RF input control node (Side A) | Accepts RF drive signal; internally protected against ESD; must be DC-blocked and matched to 50 Ω in reference circuits. |
| Gate B | RF input control node (Side B) | Independent of Gate A; enables independent biasing or drive for asymmetrical modulation schemes like Doherty. |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched I/O ports | Enables flexible external matching across 136–520 MHz without internal resonators or fixed tuning elements. |
| Integrated ESD protection | HBM 2500 V / MM 250 V - eliminates need for discrete TVS diodes at gate inputs in production assemblies. |
| Wideband full-power operation | Delivers ≥75 W Pout across entire 450–520 MHz band - avoids band-splitting or multiple PA stages in UHF radios. |
| Extreme thermal robustness | RθJC = 0.29 °C/W + TJ max = +225 °C - sustains 75 W CW operation with case temperature up to +150 °C. |
| High linearity for digital modes | Validated for TETRA, SSB, and LTE - supports adjacent channel leakage ratio (ACLR) compliance without predistortion. |
Applications
| Land Mobile Radio Base Station | TETRA Infrastructure Transmitter |
|---|---|
Use Scenario: Final-stage RF power amplifier in 450–470 MHz TETRA base stations deployed in public safety networks. IC Role / Device Role / Timing Role: High-efficiency, high-ruggedness RF power transistor delivering 75 W CW into 50 Ω load with >65:1 VSWR tolerance. Use Value: Eliminates need for external circulators or isolators during antenna VSWR events, reducing BOM cost and board area by 30% versus legacy solutions. |
Use Scenario: Output stage in portable TETRA repeaters operating in 380–400 MHz band with intermittent duty cycle. IC Role / Device Role / Timing Role: Dual-gate LDMOS transistor biased for Class AB operation, supporting 25% duty-cycle pulsed transmission. Use Value: Achieves 72.9% drain efficiency at 485 MHz with 3 W input drive - extends battery life by 40% compared to GaAs alternatives. |
| VHF Airband Transceiver | UHF Public Safety Mobile Radio |
Use Scenario: Final amplifier in 118–137 MHz aviation transceivers requiring high reliability and low intermodulation distortion. IC Role / Device Role / Timing Role: Single-ended common-source amplifier delivering 76 W at 136 MHz with 21.0 dB gain and 68% efficiency. Use Value: Meets RTCA DO-160E lightning-induced transient immunity requirements due to inherent ruggedness and integrated ESD protection. |
Use Scenario: Output stage in vehicle-mounted UHF radios (450–470 MHz) operating in harsh thermal environments (-40 to +85 °C ambient). IC Role / Device Role / Timing Role: Thermally optimized LDMOS transistor mounted directly to aluminum chassis with 0.29 °C/W RθJC path. Use Value: Maintains 75 W output power with <1 dB gain droop across full temperature range - avoids automatic level control (ALC) complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2750HR5 | Higher Pout (750 W), 1.8–2.2 GHz band - not frequency-compatible with AFT05MP075N-54M's 136–520 MHz range. | Targeted at cellular macro base stations, not land-mobile radio. | Select only if redesigning for higher-frequency infrastructure; not drop-in compatible. |
| PD85003-E | 75 W at 136–960 MHz, but lower gain (12.5 dB typ.) and higher RθJC (0.45 °C/W); no integrated ESD protection. | Suitable for cost-sensitive industrial radios where ruggedness margin is secondary. | Requires external gate ESD protection and larger heatsink; acceptable for non-critical UHF applications. |
Compared with MRF6VP2750HR5 and PD85003-E, the AFT05MP075N-54M offers optimal trade-off of bandwidth coverage (136–520 MHz), ruggedness (>65:1 VSWR), and thermal performance (0.29 °C/W) specifically validated for mobile two-way radio use cases - making it the preferred choice for TETRA, P25, and analog FM systems without frequency band compromise.
Availability
AFT05MP075N-54M is available at Aetrix Electronics and suitable for land mobile radio base stations, TETRA infrastructure transmitters, VHF airband transceivers, and UHF public safety mobile radios requiring stable component supply and long-term lifecycle support.
Supply support for AFT05MP075N-54M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep heritage in RF power technology from its acquisition of Freescale.
The AFT05MP075N-54M belongs to the Airfast® RF Power portfolio, engineered specifically for high-efficiency, high-ruggedness mobile radio amplifiers operating across VHF/UHF bands - emphasizing thermal reliability, broadband matching flexibility, and field-proven survivability in mission-critical communications.
FAQ
What is the maximum continuous drain current rating for AFT05MP075N-54M?
The AFT05MP075N-54M does not specify a maximum continuous drain current (ID) rating in its datasheet. Instead, it defines safe operating limits via total device dissipation (690 W at TC = 25 °C), junction temperature (–40 to +225 °C), and derating curve (3.45 W/°C above 25 °C). Designers must calculate ID based on actual VDS and thermal conditions using the provided RθJC = 0.29 °C/W and measured efficiency data. The AFT05MP075N-54M is intended for RF switching operation, not DC current regulation.
Does AFT05MP075N-54M support push-pull or Doherty amplifier topologies?
Yes, the AFT05MP075N-54M supports both push-pull and Doherty configurations due to its dual-gate/dual-drain architecture and electrically isolated sides. Reference circuits in the datasheet demonstrate narrowband (520 MHz) and broadband (450–520 MHz) implementations with balanced input/output matching. Its unmatched ports and integrated stability enhancements eliminate need for external neutralization, making the AFT05MP075N-54M suitable for high-efficiency Doherty PA designs in TETRA and LTE infrastructure.
What is the recommended gate bias voltage for Class AB operation of AFT05MP075N-54M?
The AFT05MP075N-54M gate threshold voltage (VGS(th)) is specified as 1.7–2.5 V, with typical value 2.1 V. For Class AB operation at IDQ(A+B) = 400 mA (narrowband) or 500 mA (broadband), the recommended gate bias is +3.25 to +3.75 Vdc - verified in Figures 3 and 7 of the datasheet. This range ensures stable quiescent current while preserving linearity for SSB and TETRA waveforms. The AFT05MP075N-54M requires individual gate biasing per side when used in asymmetrical topologies.
Can AFT05MP075N-54M be used in 13.6 V DC systems?
Yes, the AFT05MP075N-54M is fully characterized and qualified for 13.6 V DC operation, matching standard vehicle electrical systems. Datasheet Figures 7, 8, and 12–15 include performance data at VDD = 13.6 Vdc, showing 70–75 W Pout, 13–17 dB Gps, and 66–74% ηD across 136–520 MHz. Its absolute maximum VDD rating is +17 Vdc, providing 3.4 V headroom for transient spikes. The AFT05MP075N-54M maintains ruggedness and efficiency at 13.6 V without derating.
Is the exposed backside metal on AFT05MP075N-54M electrically active?
Yes, the exposed backside metal on the AFT05MP075N-54M is the source terminal for both transistor sides and must be electrically connected to system ground. This connection serves dual purposes: low-inductance RF grounding to minimize instability and primary thermal conduction path to the heatsink. The datasheet explicitly states "Exposed backside of the package is the source terminal for the transistors" and specifies four exposed source tabs on the TO-270WB-4 outline. Failure to bond this surface results in degraded thermal performance and potential oscillation in the AFT05MP075N-54M.
AFT05MP075N-54M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
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- Configuration:
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- Gain:
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- Voltage - Test:
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- Current Rating (Amps):
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AFT05MP075N-54M FAQ
1.How can I place an order for AFT05MP075N-54M through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT05MP075N-54M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT05MP075N-54M reliable?
The price and inventory of AFT05MP075N-54M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT05MP075N-54M is usually 5 days.
3.What payment methods are accepted for AFT05MP075N-54M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT05MP075N-54M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT05MP075N-54M?
AFT05MP075N-54M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT05MP075N-54M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT05MP075N-54M?
For technical support, including AFT05MP075N-54M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT05MP075N-54M requirements.
6.How does Aetrix verify that AFT05MP075N-54M is sourced from the original manufacturer or authorized distributors?
All AFT05MP075N-54M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT05MP075N-54M meets industry standards.
7.What is the process for return or replacement of AFT05MP075N-54M?
All AFT05MP075N-54M units undergo pre-shipment inspection (PSI). If there is an issue with AFT05MP075N-54M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT05MP075N-54M part is unused and in its original packaging.
Return procedure for AFT05MP075N-54M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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