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NXP Semiconductors AFT05MS004-200M
- Part No.:
- AFT05MS004-200M
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
AFT05MS004-200M.pdf
- Description:
- RF MOSFET
- Quantity:
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Inventory:7,638
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Product details
Overview
AFT05MS004-200M from NXP Semiconductors (formerly Freescale) is a high-ruggedness, enhancement-mode LDMOS RF power transistor designed for handheld two-way radio output stages operating from 136 to 941 MHz. It delivers 4 W CW output power at 7.5 Vdc with 74.9% drain efficiency and 20.9 dB power gain at 520 MHz, enabling compact, battery-efficient VHF/UHF transmitters.
For engineers reviewing the AFT05MS004-200M datasheet, AFT05MS004-200M pinout, AFT05MS004-200M application, or AFT05MS004-200M equivalent, this page provides verified specifications, SOT-89 package layout, ruggedness validation data, and real-world impedance matching points for handheld radio amplifier design.
Technical Context
This LDMOS device operates in common-source configuration with unmatched input/output ports, supporting wideband tuning across VHF (136–174 MHz), UHF (350–520 MHz), and 700–800 MHz bands. Its gate threshold voltage (1.7–2.5 Vdc) and low on-resistance (VDS(on) = 0.22 Vdc @ 700 mA) enable stable Class AB biasing with minimal gate drive requirements.
Thermal resistance is specified at 4.4 °C/W (junction-to-case), validated at 4.0 W CW, 7.5 Vdc, 520 MHz, and TC = 79 °C. Integrated ESD protection meets HBM Class 1C (1000 V), MM Class A (100 V), and CDM Class IV (2000 V), ensuring robust handling in production and field environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 136–941 MHz - supports full-band operation across VHF, UHF, and 700–800 MHz handheld radio bands without retuning. |
| Output Power (Pout) | 4.0 W CW - verified across 136–174 MHz, 350–520 MHz, and 520 MHz narrowband test circuits under standard bias conditions. |
| Drain Efficiency (ηD) | 74.9% @ 520 MHz - enables high battery runtime in portable radios by minimizing heat generation per watt delivered. |
| Power Gain (Gps) | 20.9 dB @ 520 MHz - reduces need for driver-stage amplification, simplifying multi-stage PA architecture. |
| Thermal Resistance (RθJC) | 4.4 °C/W - allows direct thermal coupling to PCB copper pour or heatsink in SOT-89 footprint without derating below 4 W. |
| VSWR Ruggedness | >65:1 @ 435 MHz (CW, 3 dB overdrive) - survives antenna mismatch events in handheld radios without degradation. |
| ESD Protection | HBM 1000 V / MM 100 V / CDM 2000 V - eliminates need for external ESD clamps in front-end RF paths. |
Pinout & Package
SOT-89 package with exposed drain pad for thermal conduction and mechanical stability. Three-terminal configuration optimized for surface-mount RF amplifier layouts with minimal parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Drain) | RF Output / High-Power Drain Node | Connected to output matching network and thermal pad; carries full RF output current and DC supply return path. |
| 2 (Source) | Common Source Reference / RF Ground Return | Low-inductance ground connection shared between input and output networks; critical for stability and gain flatness. |
| 3 (Gate) | RF Input Control Terminal | High-impedance control node requiring precise gate bias (VGS ≈ 2.2 V typical) and ESD-protected routing. |
Key Features
| Feature | Design Value |
|---|---|
| Unmatched I/O Ports | Enables flexible impedance transformation across 136–941 MHz without internal matching components, reducing external BOM count. |
| Wideband Full-Power Operation | Delivers consistent 4 W Pout across VHF (136–174 MHz), UHF (350–520 MHz), and 700–800 MHz bands using single device and reference designs. |
| Extreme Ruggedness | Validated >65:1 VSWR tolerance at 435 MHz with no degradation - eliminates need for circulators or VSWR-sensing protection circuitry. |
| Integrated Stability Enhancements | Prevents oscillation in broadband configurations without external stabilization resistors or ferrite beads in production designs. |
| Tape-and-Reel Packaging | T1 suffix denotes 1,000-unit reel, 12 mm tape width, 7-inch reel - compatible with automated SMT placement for high-volume handheld radio assembly. |
Applications
| Output Stage VHF Band Handheld Radio | Output Stage UHF Band Handheld Radio |
|---|---|
Use Scenario: Final RF power amplifier in portable land-mobile radios operating in 136–174 MHz band (e.g., public safety, business band). IC Role / Device Role / Timing Role: Common-source RF power transistor delivering 4 W CW into 50 Ω load with 61.8% efficiency at 155 MHz. Use Value: Eliminates need for external VSWR protection due to >65:1 ruggedness rating, reducing bill-of-materials and board area. |
Use Scenario: Transmit-stage amplifier in UHF handheld radios covering 350–520 MHz (e.g., PMR, DMR, TETRA). IC Role / Device Role / Timing Role: High-efficiency LDMOS transistor providing 4.0 W Pout and 15.4 dB Gps at 470 MHz with 67.7% ηD. Use Value: Enables extended battery life via 67.7% drain efficiency and simplified thermal management with 4.4 °C/W RθJC. |
| Output Stage for 700–800 MHz Handheld Radio | Driver for 10–1000 MHz Applications |
Use Scenario: Final PA stage in 700–800 MHz LTE/PMR handheld terminals where spectral purity and linearity are critical. IC Role / Device Role / Timing Role: Linearized LDMOS transistor characterized up to 941 MHz, supporting broadband modulation schemes with low IMD3. Use Value: Maintains 4 W output capability across 700–800 MHz without retuning, validated by impedance data (Zsource/Zload) at 700+ MHz frequencies. |
Use Scenario: Driver amplifier preceding higher-power final stages in wideband test equipment or software-defined radios. IC Role / Device Role / Timing Role: Wideband gain block delivering 17.8–20.2 dB gain from 136–520 MHz with stable S-parameters and low Ciss (57.6 pF). Use Value: Reduces system-level gain compression risk with 1.7–2.5 V gate threshold and 4.0 S forward transconductance, easing bias network design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF101AN | Higher Pout (10 W), wider frequency range (10–2000 MHz), but larger SOT-113A package and higher VDD (28 V). | Targeted at base station drivers and repeaters; less suitable for space-constrained handhelds due to size and voltage requirements. | Select MRF101AN only when >4 W output or >520 MHz bandwidth is required and PCB layout accommodates larger footprint and higher-voltage biasing. |
| PD57003-E | Lower Pout (3 W), same SOT-89 package, but optimized for 1.8–2.2 GHz; lacks VHF/UHF characterization below 350 MHz. | Designed for cellular infrastructure and Wi-Fi front-ends; not validated for 136–174 MHz handheld operation or VSWR ruggedness. | Choose PD57003-E only for 1.8–2.2 GHz applications where 3 W suffices; avoid for VHF/UHF handheld radios due to unverified low-frequency performance. |
Compared with MRF101AN and PD57003-E, AFT05MS004-200M uniquely balances 4 W output, SOT-89 form factor, VHF/UHF coverage, and extreme ruggedness-making it the only option qualified for handheld radio final-stage use across 136–941 MHz with no layout or bias redesign.
Availability
AFT05MS004-200M is available at Aetrix Electronics and suitable for handheld two-way radio, portable PMR/DMR terminals, and broadband RF test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for AFT05MS004-200M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture and support the Airfast family of RF power transistors for wireless infrastructure and portable communications.
The AFT05MS004-200M belongs to the Airfast LDMOS product line, engineered specifically for rugged, battery-efficient RF power amplification in handheld radios operating from VHF through UHF bands.
FAQ
What is the maximum continuous drain current rating for AFT05MS004-200M?
The AFT05MS004-200M does not specify a maximum continuous drain current (ID) rating directly; instead, its safe operating area is defined by maximum ratings including VDSS = +30 Vdc, total device dissipation PD = 28 W @ TC = 25 °C (derated 0.23 W/°C above), and junction temperature limit of 150 °C. Actual current depends on bias point and thermal design - e.g., at 4 W Pout, 7.5 Vdc, and 74.9% efficiency, average ID is ~0.71 A.
Does AFT05MS004-200M require external gate protection diodes?
No, AFT05MS004-200M integrates ESD protection meeting HBM Class 1C (1000 V), MM Class A (100 V), and CDM Class IV (2000 V), eliminating the need for external gate protection diodes in standard handheld radio designs. Layout best practices (short gate traces, ground stitching) remain essential to preserve this protection integrity.
Can AFT05MS004-200M be used in Class C amplifier configurations?
AFT05MS004-200M is characterized and optimized for Class AB operation (IDQ = 100 mA in VHF/UHF tests). While it can operate in Class C, Freescale/NXP does not provide harmonic termination data, efficiency curves, or reliability validation for Class C - so use requires full customer-level characterization and thermal validation.
What is the recommended gate bias voltage for AFT05MS004-200M in a 4 W output stage?
For 4 W output at 520 MHz, the AFT05MS004-200M is typically biased at VGS ≈ 2.2 Vdc (midpoint of 1.7–2.5 Vdc threshold range) with IDQ = 100 mA. Figure 6 in the datasheet shows VGS = 2.2 V yields ~4.0 W Pout at 520 MHz, confirming this as the optimal setting for linear, efficient operation.
Is AFT05MS004-200M RoHS compliant and halogen-free?
Yes, AFT05MS004-200M complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. The SOT-89 package uses lead-free matte tin plating, and moisture sensitivity level is rated at J-STD-020 Level 1 (peak reflow ≤ 260 °C), confirmed in Table 4 of the official datasheet.
AFT05MS004-200M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- -
- Configuration:
- -
- Frequency:
- -
- Gain:
- -
- Voltage - Test:
- -
- Current Rating (Amps):
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- Noise Figure:
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- Current - Test:
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- Power - Output:
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- Voltage - Rated:
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- Grade:
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- Qualification:
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- Mounting Type:
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- Supplier Device Package:
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AFT05MS004-200M FAQ
1.How can I place an order for AFT05MS004-200M through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT05MS004-200M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT05MS004-200M reliable?
The price and inventory of AFT05MS004-200M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT05MS004-200M is usually 5 days.
3.What payment methods are accepted for AFT05MS004-200M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT05MS004-200M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT05MS004-200M?
AFT05MS004-200M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT05MS004-200M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT05MS004-200M?
For technical support, including AFT05MS004-200M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT05MS004-200M requirements.
6.How does Aetrix verify that AFT05MS004-200M is sourced from the original manufacturer or authorized distributors?
All AFT05MS004-200M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT05MS004-200M meets industry standards.
7.What is the process for return or replacement of AFT05MS004-200M?
All AFT05MS004-200M units undergo pre-shipment inspection (PSI). If there is an issue with AFT05MS004-200M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT05MS004-200M part is unused and in its original packaging.
Return procedure for AFT05MS004-200M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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