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NXP Semiconductors AFT18H357-24NR6
- Part No.:
- AFT18H357-24NR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-1230-4L2L
- Datasheet:
-
AFT18H357-24NR6.pdf
- Description:
- RF MOSFET LDMOS 28V OM1230-42
- Quantity:
- Payment:
- Shipping:
Inventory:5,146
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Product details
Overview
AFT18H357-24NR6 from NXP Semiconductors is a 63 W average RF power LDMOS transistor designed for base station final-stage amplification in 1805–1880 MHz LTE/W-CDMA infrastructure applications, operating at 28 V supply with 17.5 dB gain and 48.7% drain efficiency.
For engineers reviewing the AFT18H357-24NR6 datasheet, AFT18H357-24NR6 pinout, AFT18H357-24NR6 application, or AFT18H357-24NR6 equivalent, this page delivers verified package mapping (OM-1230-4L2L), thermal resistance (0.23 °C/W), frequency band alignment, and direct alternative comparisons for wireless infrastructure design validation.
Technical Context
The AFT18H357-24NR6 employs NXP's high-reliability 48 V LDMOS process optimized for wideband cellular infrastructure, featuring integrated input/output matching networks enabling single-ended operation without external tuning components across its designated 1805–1880 MHz band.
It supports W-CDMA test signal conditions with 63 W average output power, operates at 28 V drain bias, and delivers 17.5 dB small-signal gain at 1805 MHz - confirming its role as a matched, high-efficiency final-stage amplifier for macrocell and remote radio head (RRH) transmitter chains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz: Fully characterized and matched for LTE Band 3 (1805–1880 MHz) infrastructure deployment. |
| Output Power (Pout) | 63 W avg (W-CDMA): Sustained linear output under real-world modulated signal conditions, not pulsed or PEP-only. |
| Drain Supply Voltage (VDD) | 28 V: Standard telecom rail voltage; enables compatibility with existing 28 V power delivery architectures. |
| Power Gain | 17.5 dB @ 1805 MHz: Confirmed small-signal gain at lower edge of band; ensures stable drive margin into saturation. |
| Drain Efficiency | 48.7% @ 1805 MHz: High conversion efficiency reduces thermal load and improves system-level power budgeting. |
| Thermal Resistance (θJC) | 0.23 °C/W: Low junction-to-case resistance enables high-power operation with standard heatsink interfaces. |
| Package | OM-1230-4L2L: Thermally enhanced over-molded package with 4-layer internal leadframe and dual-side thermal pad for PCB-level heat extraction. |
Pinout & Package
OM-1230-4L2L is a thermally optimized over-molded package with exposed copper thermal pad on bottom surface and four signal terminals arranged in dual-row configuration. It features symmetric leadframe geometry for balanced current distribution and low-inductance source grounding.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | RF Ground / DC Return | Primary RF and DC return path; must be connected to large-area ground plane via multiple vias beneath thermal pad. |
| Pin 2 (Gate) | RF Input | High-impedance control terminal; requires impedance-matched 50 Ω input trace and DC blocking capacitor. |
| Pin 3 (Drain) | RF Output / DC Supply | High-current RF output node; connects to output matching network and 28 V supply through RF choke. |
| Pin 4 (Source) | RF Ground / DC Return | Secondary ground terminal; used for symmetrical layout and improved thermal conduction to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Input/Output Matching | Enables direct 50 Ω interface without external tuning components - reduces BOM count and layout complexity in RRH modules. |
| High Drain Efficiency (48.7%) | Minimizes power dissipation and cooling requirements in space-constrained macrocell enclosures and outdoor units. |
| Low Thermal Resistance (0.23 °C/W) | Supports continuous 63 W avg operation with standard forced-air or passive heatsinking, improving system MTTF. |
| W-CDMA Optimized Linearity | Meets ACLR and EVM requirements for LTE FDD uplink transmission without requiring complex digital predistortion overhead. |
| OM-1230-4L2L Package | Provides mechanical robustness and repeatable thermal performance across manufacturing batches and field deployments. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: Final-stage amplification in 3-sector macrocell sites serving dense urban LTE coverage with 20 MHz channel bandwidth. IC Role / Device Role / Timing Role: High-efficiency, matched RF power transistor delivering 63 W avg output per carrier in Doherty-configured PA stages. Use Value: Enables >48% drain efficiency at 1805 MHz, reducing total system power draw by ~12% versus prior-generation LDMOS devices. |
Use Scenario: Compact, weatherized outdoor unit mounted directly on cell tower antenna array for low-latency fronthaul. IC Role / Device Role / Timing Role: Single-ended final-stage amplifier operating in 1805–1880 MHz band with integrated matching for minimal external component count. Use Value: OM-1230-4L2L package allows direct thermal coupling to aluminum heatsink, eliminating need for thermal interface material in sealed RRH enclosures. |
| Private LTE Network Infrastructure | Neutral Host Distributed Antenna System (DAS) |
|
Use Scenario: On-premise private LTE deployment for industrial campuses, ports, or utilities requiring licensed Band 3 spectrum operation. IC Role / Device Role / Timing Role: Linear RF power amplifier stage supporting multi-carrier W-CDMA/LTE signals with strict ACLR compliance. Use Value: Verified 48.7% efficiency at 63 W avg output enables fanless operation in compact indoor baseband units. |
Use Scenario: Multi-operator DAS head-end unit aggregating signals from multiple carriers before distribution over coaxial/fiber network. IC Role / Device Role / Timing Role: High-linearity final-stage amplifier handling composite multi-band, multi-carrier signals without intermodulation distortion. Use Value: Matched 1805–1880 MHz response ensures flat group delay and consistent EVM across full channel bandwidth in shared-spectrum environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFT18H357-24SR6 | Same die, NI-1230S-4L2L package; 0.43 °C/W θJC vs. 0.23 °C/W for NR6; 50.3% efficiency at 1805 MHz. | Higher thermal resistance limits sustained 63 W operation in convection-cooled enclosures; suited for forced-air or higher airflow systems. | Select AFT18H357-24SR6 only when board-level thermal management includes active cooling or larger heatsink area. |
| A2T18H410-24SR6 | Higher 71 W avg output, same 1805–1880 MHz band, 51.2% efficiency, 0.24 °C/W θJC, but requires 28 V bias and delivers 17.4 dB gain at 1805 MHz. | Designed for higher-output macrocell configurations; increased power density demands stricter thermal design and higher input drive level. | Choose A2T18H410-24SR6 when system-level output requirement exceeds 63 W avg and PCB layout accommodates higher thermal load. |
Compared with AFT18H357-24NR6, the AFT18H357-24SR6 trades lower thermal performance for identical RF functionality in a different package, while A2T18H410-24SR6 offers +8 W output at marginally higher efficiency - both require revalidation of thermal interface and input drive network.
Availability
AFT18H357-24NR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, private LTE infrastructure, and neutral-host DAS applications requiring stable component supply and long-term production continuity.
Supply support for AFT18H357-24NR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in RF power innovation with over 60 years of experience, specializing in high-reliability transistors for wireless infrastructure, broadcast, and industrial systems.
The AFT18H357-24NR6 belongs to NXP's cellular infrastructure LDMOS portfolio, engineered specifically for energy-efficient, thermally robust final-stage amplification in 4G/LTE macro and small-cell base stations.
FAQ
What is the maximum average RF output power of the AFT18H357-24NR6?
The AFT18H357-24NR6 delivers 63 W average RF output power under W-CDMA test conditions (3.84 MHz bandwidth, PAR 7.5 dB) at 1805 MHz with 28 V drain supply. This value is measured and guaranteed across temperature and process variation, not a theoretical peak or PEP rating.
Which frequency bands is the AFT18H357-24NR6 qualified for?
The AFT18H357-24NR6 is fully characterized and matched for operation in the 1805–1880 MHz range, aligning precisely with LTE Band 3 (FDD uplink). Its integrated matching network is optimized for this band; operation outside this range requires external tuning and is not supported.
Does the AFT18H357-24NR6 require external matching components?
No - the AFT18H357-24NR6 features fully integrated input and output matching networks, enabling direct 50 Ω interface on both RF ports. External components are limited to DC blocking capacitors, gate bias resistors, and RF chokes; no discrete matching inductors or capacitors are needed for nominal band operation.
What is the thermal resistance (θJC) of the AFT18H357-24NR6 and how does it impact heatsink design?
The AFT18H357-24NR6 has a junction-to-case thermal resistance of 0.23 °C/W in the OM-1230-4L2L package. This low value allows efficient heat transfer to the PCB heatsink; designers should use ≥4 thermal vias under the exposed pad and a minimum 25 mm² copper pour to achieve target case temperature below 95 °C at full 63 W output.
Is the AFT18H357-24NR6 pin-compatible with other NXP OM-1230 variants like AFT18H356-24SR6?
No - although both use OM-1230 footprint variants, the AFT18H357-24NR6 uses OM-1230-4L2L while AFT18H356-24SR6 uses NI-1230S-4L2L. These packages differ in leadframe construction, thermal pad geometry, and solder mask layout; PCB redesign is required for substitution.
AFT18H357-24NR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-1230-4L2L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.81GHz
- Gain:
- 17.5dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 800 mA
- Power - Output:
- 63W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- OM-1230-4L2L
AFT18H357-24NR6 FAQ
1.How can I place an order for AFT18H357-24NR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT18H357-24NR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT18H357-24NR6 reliable?
The price and inventory of AFT18H357-24NR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT18H357-24NR6 is usually 5 days.
3.What payment methods are accepted for AFT18H357-24NR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT18H357-24NR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT18H357-24NR6?
AFT18H357-24NR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT18H357-24NR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT18H357-24NR6?
For technical support, including AFT18H357-24NR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT18H357-24NR6 requirements.
6.How does Aetrix verify that AFT18H357-24NR6 is sourced from the original manufacturer or authorized distributors?
All AFT18H357-24NR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT18H357-24NR6 meets industry standards.
7.What is the process for return or replacement of AFT18H357-24NR6?
All AFT18H357-24NR6 units undergo pre-shipment inspection (PSI). If there is an issue with AFT18H357-24NR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT18H357-24NR6 part is unused and in its original packaging.
Return procedure for AFT18H357-24NR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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