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NXP Semiconductors AFT18HW355SR6
- Part No.:
- AFT18HW355SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230S
- Datasheet:
-
AFT18HW355SR6.pdf
- Description:
- RF MOSFET LDMOS 28V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:4,418
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Product details
Overview
AFT18HW355SR6 from NXP Semiconductors (formerly Freescale) is a 63 W average, asymmetrical Doherty RF power LDMOS transistor optimized for cellular base station amplifiers operating in the 1805–1880 MHz band. It features dual-gate architecture with carrier and peaking sides, 28 V DC operation, 48.3% typical drain efficiency at 1880 MHz, and –29.2 dBc adjacent channel power ratio under single-carrier W-CDMA conditions.
For engineers reviewing the AFT18HW355SR6 datasheet, AFT18HW355SR6 pinout, AFT18HW355SR6 application, or AFT18HW355SR6 equivalent, this device supports wide instantaneous bandwidth, digital predistortion compatibility, and high linearity in macrocell and remote radio head (RRH) transmitter stages requiring stable RF output up to 63 W avg. with PAR handling up to 7.5 dB.
Technical Context
The AFT18HW355SR6 implements an integrated asymmetrical Doherty topology with separate carrier (Side A) and peaking (Side B) LDMOS transistors in a monolithic NI-1230S-4 package. Carrier side operates at IDQA = 1100 mA with VGS(Q) = 2.9 Vdc typical; peaking side biased at VGSB = 1.45 Vdc (functional test) or 1.7 Vdc (load pull), enabling precise envelope tracking and DPD linearization.
It delivers broadband performance across 1805–1880 MHz with gain flatness of 0.63 dB at 63 W avg., AM/PM distortion ≤22°, and input return loss ≥–9 dB. Internally matched for 50 Ω systems, it requires tied VDDA/VDDB supplies and supports pulsed CW testing up to 400 W P3dB with thermal resistance RθJC = 0.47 °C/W at 77°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–1880 MHz - Full-band operation without external tuning for LTE Band 3 (DCS-1800) infrastructure applications. |
| Output Power (Avg) | 63 W - Sustained average RF output under single-carrier W-CDMA with 9.9 dB PAR at 0.01% CCDF probability. |
| Drain Efficiency | 48.3% typ. @ 1880 MHz - Enables reduced cooling requirements and higher system-level power density in base station PA modules. |
| Power Gain | 15.2 dB typ. @ 1880 MHz - Provides sufficient small-signal gain to minimize driver stage complexity in multi-stage amplifier designs. |
| ACPR | –29.2 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for 3.84 MHz W-CDMA channels without excessive filtering. |
| Thermal Resistance | 0.47 °C/W (Junction-to-Case) - Supports reliable operation at TC = 77°C under 63 W CW, critical for compact heatsink integration. |
| ESD Rating | HBM Class 2 (2 kV), MM Class B - Ensures robust handling during assembly and board-level rework in production environments. |
Pinout & Package
Package: NI-1230S-4, thermally enhanced over-molded plastic package with exposed source paddle for low-thermal-resistance mounting. Dimensions per Freescale drawing AFT18HW355SR6, Rev. 1 (2013).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (RFoutA/VDSA) | Carrier Drain Output | Main RF output node for carrier amplifier section; DC-coupled and RF-independent from Pin 2. |
| 2 (RFoutB/VDSB) | Peaking Drain Output | RF output node for peaking amplifier section; electrically isolated from Pin 1 for independent load impedance optimization. |
| 3 (RFinA/VGSA) | Carrier Gate Input | Control terminal for carrier transistor; requires bias network delivering VGS(Q) ≈ 2.9 Vdc at IDQA = 1100 mA. |
| 4 (RFinB/VGSB) | Peaking Gate Input | Control terminal for peaking transistor; biased at VGSB = 1.45 Vdc (functional test) or 1.7 Vdc (load pull) for optimal Doherty compression point. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced In-Package Doherty | Monolithic integration of carrier and peaking LDMOS transistors eliminates inter-device phase/timing mismatch, enabling >15% efficiency improvement over discrete Doherty implementations. |
| Wide Instantaneous Bandwidth | 75 MHz instantaneous bandwidth (1805–1880 MHz) with <0.63 dB gain flatness at 63 W avg., eliminating need for frequency-dependent matching networks. |
| Negative VGS Range | Gate-source voltage rating of –6.0 Vdc enables stable Class C operation and improved back-off efficiency in envelope-tracking architectures. |
| Digital Predistortion Ready | Low AM/PM distortion (≤22°) and consistent ACPR across temperature (–30°C to +85°C) simplify DPD coefficient convergence and reduce calibration overhead. |
| Tape & Reel Packaging | R6 suffix denotes 150-unit tape-and-reel configuration on 56 mm carrier tape with 13-inch reel - compatible with high-volume SMT placement equipment. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-power RF final stage in 4T4R LTE eNodeB supporting 20 MHz channel bandwidth and 2×2 MIMO in urban macro deployments. IC Role / Device Role / Timing Role: Asymmetrical Doherty PA core delivering 63 W avg. output per antenna path with DPD correction, operating continuously at TC ≤ 106°C. Use Value: Achieves >48% drain efficiency at full output while maintaining –29.2 dBc ACPR, reducing system power consumption and thermal management cost by ~18% versus prior-generation LDMOS. |
Use Scenario: Compact, weatherized outdoor RRH unit deployed on cell tower sectors with fiber fronthaul and integrated cooling. IC Role / Device Role / Timing Role: Dual-path RF power amplifier driving two independent antenna elements; leverages internal matching to minimize PCB area and component count. Use Value: NI-1230S-4 package with 0.47 °C/W RθJC enables passive heatsinking in space-constrained enclosures, supporting 125°C case temperature operation without forced air. |
| W-CDMA/HSPA+ Infrastructure | Digital Pre-Distortion Test Platform |
|
Use Scenario: Multi-carrier W-CDMA base station upgrade where legacy 3.84 MHz channel bandwidth must coexist with LTE carriers in same spectrum. IC Role / Device Role / Timing Role: Final-stage PA supporting 2-carrier W-CDMA with 10:1 VSWR load mismatch tolerance at 252 W peak power without degradation. Use Value: Maintains –9 dB IRL and <0.01 dB gain variation over temperature, ensuring stable loop gain for analog feedback-based linearization circuits. |
Use Scenario: Lab-grade DPD characterization platform using vector signal analyzers and arbitrary waveform generators to extract memory polynomial coefficients. IC Role / Device Role / Timing Role: Reference Doherty device with known load-pull contours (Figs. 8–11, 20–27) for validating behavioral models and DPD algorithm convergence speed. Use Value: Published P1dB/P3dB contours at 1805/1840/1880 MHz enable accurate model initialization, reducing DPD training time by >40% compared to black-box device modeling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM38009S | Same NI-1230S-4 package, but rated for 3400–3800 MHz; lower P1dB (100 W) and narrower bandwidth (400 MHz). | Designed for TDD-LTE Band 42/43; not suitable for 1805–1880 MHz due to fundamental frequency mismatch. | Select only for 3.5 GHz infrastructure; requires complete redesign of matching networks and biasing for 1.8 GHz operation. |
| MRF6VP2600HR5 | 600 W P3dB, 28 V, 1805–2200 MHz; larger NI-780 package; RθJC = 0.25 °C/W; no integrated Doherty architecture. | Requires external Doherty combiner and separate carrier/peaking bias control; higher thermal margin but greater board area and design complexity. | Choose when >100 W avg. output or extended 2.2 GHz coverage is required; not drop-in compatible due to pinout and footprint differences. |
Compared with AFM38009S and MRF6VP2600HR5, the AFT18HW355SR6 provides optimized 1.8 GHz Doherty performance in a compact, internally matched package-enabling faster time-to-market for Band 3 macrocell upgrades without sacrificing efficiency or linearity.
Availability
AFT18HW355SR6 is available at Aetrix Electronics and suitable for cellular infrastructure, remote radio head (RRH), and W-CDMA base station applications requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.
Supply support for AFT18HW355SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support the Airfast family of RF power transistors for cellular infrastructure.
The AFT18HW355SR6 belongs to the Airfast RF Power LDMOS product line, engineered specifically for high-efficiency, wide-bandwidth Doherty amplifiers in 4G/LTE macrocell and small-cell base stations.
FAQ
What is the maximum continuous wave (CW) output power rating for the AFT18HW355SR6?
The AFT18HW355SR6 is rated for 259 W CW operation at TC = 25°C, with derating of 0.64 W/°C above that temperature. At TC = 77°C, the device supports 63 W average output under W-CDMA modulation, and at TC = 106°C, it sustains 225 W CW per Freescale's Maximum Ratings table. These limits ensure safe junction temperature operation within the –40°C to +225°C TJ range.
Does the AFT18HW355SR6 require external input/output matching networks?
No - the AFT18HW355SR6 is internally matched for 50 Ω systems on both input and output ports, as confirmed in Table 4 footnotes and Figure 1 layout notes. This eliminates discrete matching components for standard 50 Ω test fixtures and simplifies PCB layout, though system-level harmonic filtering and isolation remain necessary for EVM compliance.
How does the dual-gate architecture of the AFT18HW355SR6 support digital predistortion (DPD)?
The AFT18HW355SR6's separate carrier (VGSA) and peaking (VGSB) gate terminals allow independent bias control and real-time envelope-dependent adjustment - a key requirement for DPD convergence. Its low AM/PM distortion (≤22°) and stable ACPR (–29.2 dBc) across temperature and power levels reduce DPD coefficient update frequency and improve steady-state EVM performance in live networks.
What is the thermal resistance (RθJC) of the AFT18HW355SR6, and how is it measured?
The AFT18HW355SR6 has RθJC = 0.47 °C/W when operated at TC = 77°C, 63 W CW, 28 Vdc, IDQA = 1100 mA, VGSB = 1.45 Vdc, and 1840 MHz, per Table 2. This value was determined using Freescale's methodology detailed in AN1955 and reflects junction-to-case conduction through the exposed source paddle - critical for heatsink interface design and thermal simulation accuracy.
Can the AFT18HW355SR6 be used in symmetrical Doherty configurations?
No - the AFT18HW355SR6 is explicitly designed as an *asymmetrical* Doherty device, with different gate threshold voltages, on-resistances, and load-pull optima for carrier (Side A) and peaking (Side B) sections. Using it in a symmetrical configuration would degrade efficiency, linearity, and gain flatness; Freescale's functional test data and Figures 8–11 validate its asymmetrical optimization.
AFT18HW355SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230S
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.88GHz
- Gain:
- 15.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.1 A
- Power - Output:
- 63W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230S
AFT18HW355SR6 FAQ
1.How can I place an order for AFT18HW355SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT18HW355SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT18HW355SR6 reliable?
The price and inventory of AFT18HW355SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT18HW355SR6 is usually 5 days.
3.What payment methods are accepted for AFT18HW355SR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT18HW355SR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT18HW355SR6?
AFT18HW355SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT18HW355SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT18HW355SR6?
For technical support, including AFT18HW355SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT18HW355SR6 requirements.
6.How does Aetrix verify that AFT18HW355SR6 is sourced from the original manufacturer or authorized distributors?
All AFT18HW355SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT18HW355SR6 meets industry standards.
7.What is the process for return or replacement of AFT18HW355SR6?
All AFT18HW355SR6 units undergo pre-shipment inspection (PSI). If there is an issue with AFT18HW355SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT18HW355SR6 part is unused and in its original packaging.
Return procedure for AFT18HW355SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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