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NXP Semiconductors AFT20P060-4NR3
- Part No.:
- AFT20P060-4NR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- OM-780-4L
- Datasheet:
-
AFT20P060-4NR3.pdf
- Description:
- RF MOSFET LDMOS 28V OM780-4
- Quantity:
- Payment:
- Shipping:
Inventory:1,730
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Product details
Overview
AFT20P060-4NR3 from NXP Semiconductors (formerly Freescale) is a dual-path 6.3 W average RF power LDMOS transistor optimized for cellular base station amplifiers operating in the 1805–2170 MHz band. It delivers 18.9 dB power gain, 20.0% drain efficiency, and –42.5 dBc ACPR at 2140 MHz under single-carrier W-CDMA conditions (28 Vdc, 450 mA quiescent current, 6.3 W avg. output). Its integrated input/output matching supports Doherty amplifier architectures.
For engineers reviewing the AFT20P060-4NR3 datasheet, AFT20P060-4NR3 pinout, AFT20P060-4NR3 application, or AFT20P060-4NR3 equivalent, key selection criteria include its dual-path configuration, 28 V operation, thermal resistance of 0.56 °C/W (junction-to-case), ESD Class 2 HBM rating, and suitability for digital predistortion (DPD)-enabled macrocell transceivers.
Technical Context
This device integrates two identical N-channel enhancement-mode lateral MOSFETs in a single OM-780-4L plastic package, with independent RF input (RFinA/VGSA, RFinB/VGSB) and RF output (RFoutA/VDSA, RFoutB/VDSB) terminals. The exposed backside serves as the common source connection for both transistors.
It is characterized for Class AB and Class C operation with extended negative gate-source voltage range (–6.0 V), enabling improved linearity control in Doherty configurations. Performance is validated using Freescale's standard 50 Ω test fixture across 1805–1880 MHz and 2110–2170 MHz bands, with internal matching eliminating need for external input/output matching networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 1805–2170 MHz - Covers LTE Band 1 (2100 MHz), Band 3 (1800 MHz), and Band 25/38/41 (1900–2600 MHz partial overlap). |
| Avg. Output Power | 6.3 W - Sustained linear output under single-carrier W-CDMA with 9.9 dB PAR, suitable for macrocell PAs. |
| Power Gain | 18.9 dB typical - Enables reduced driver stage complexity in multi-stage PA designs. |
| Drain Efficiency | 20.0% @ 2140 MHz - Balances linearity and thermal load in DPD-corrected systems. |
| ACPR | –42.5 dBc @ ±5 MHz offset - Meets 3GPP ACLR requirements for UMTS/LTE base stations. |
| Thermal Resistance | 0.56 °C/W (RθJC) - Supports high-power density mounting on heatsinks with minimal thermal derating. |
| ESD Rating | HBM Class 2 (2 kV) - Provides robust handling during assembly without requiring special ESD protocols beyond standard Class 2 practices. |
Pinout & Package
Package: OM-780-4L, 4-pin plastic overmolded surface-mount package with exposed metal backside (common source terminal). Dimensions per Freescale Mechanical Outline Rev. 1 (Dec. 2013).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFinA / VGSA | Gate terminal of Path A - Accepts RF input signal and bias voltage for first LDMOS path. |
| 2 | RFinB / VGSB | Gate terminal of Path B - Independent gate control enables asymmetrical Doherty drive or dual-band tuning. |
| 3 | RFoutA / VDSA | Drain terminal of Path A - High-current RF output node; requires low-inductance RF routing and thermal vias. |
| 4 | RFoutB / VDSB | Drain terminal of Path B - Electrically isolated from Path A; enables separate output combiner design. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-path monolithic integration | Reduces PCB footprint and inter-device mismatch vs. discrete dual-transistor solutions; enables precise amplitude/phase tracking in Doherty combiners. |
| Optimized for Doherty applications | Extended negative VGS range (–6.0 V) allows deep Class C operation of peaking path while maintaining stability and gain compression symmetry. |
| Internally matched | Eliminates need for external broadband input/output matching networks - simplifies layout and improves repeatability across production lots. |
| Designed for DPD systems | Linearized ACPR and PAR performance under 9.9 dB input PAR enables effective correction with standard FPGA-based DPD algorithms. |
| Tape-and-reel packaging | R3 suffix denotes 250-unit reel (32 mm tape width, 13-inch reel) - compatible with high-volume SMT placement equipment. |
Applications
| Macrocell Base Station PA | Digital Predistortion Transmitter |
|---|---|
|
Use Scenario: 20 W PEP macrocell power amplifier stage in LTE FDD eNodeB supporting 2×2 MIMO across Bands 1 and 3. IC Role / Device Role / Timing Role: Final-stage RF power transistor delivering 6.3 W average output per path in a dual-input Doherty configuration. Use Value: Achieves –42.5 dBc ACLR at 2140 MHz with 20% efficiency, reducing cooling requirements and power supply overhead versus older LDMOS alternatives. |
Use Scenario: Linearized transmitter module in remote radio head (RRH) with real-time DPD feedback loop. IC Role / Device Role / Timing Role: RF output device whose AM/PM distortion (–20° max) and PAR compression behavior are modeled and corrected by baseband DPD engine. Use Value: Stable small-signal gain flatness (0.33 dB over 60 MHz) ensures consistent DPD model convergence across operating bandwidth. |
| Multi-Band Cellular Infrastructure | W-CDMA Node B Amplifier |
|
Use Scenario: Dual-band front-end PA covering 1805–1880 MHz (Band 3) and 2110–2170 MHz (Band 1) using shared bias and thermal management. IC Role / Device Role / Timing Role: Dual-path transistor allowing independent tuning of each frequency band via separate gate bias and output matching. Use Value: Verified broadband gain response (17–19 dB) and IRL > –10 dB across both bands eliminates need for band-switched matching networks. |
Use Scenario: 3G UMTS Node B final amplifier operating at 2140 MHz with 3.84 MHz channel bandwidth. IC Role / Device Role / Timing Role: High-efficiency RF power device delivering 6.3 W avg. output under W-CDMA modulation with 9.9 dB PAR. Use Value: 23.8% drain efficiency at 1840 MHz and 20.0% at 2140 MHz extends mean time to failure (MTTF) in thermally constrained outdoor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2600HR5 | Single-path 60 W CW GaN HEMT; higher P1dB (60 W), wider bandwidth (1.8–2.7 GHz), but requires external matching and higher gate drive complexity. | Targeted at higher-output macrocells or active antenna systems where >10 W avg. output is required. | Select when scaling output power beyond 6.3 W avg. and accepting added matching network design effort. |
| PD57060-E | Single-path 6 W avg. LDMOS; similar 1800–2200 MHz coverage, but lower gain (17.2 dB typ.) and no dual-path integration. | Suitable for cost-sensitive microcell or repeater designs where dual-path functionality is unnecessary. | Choose for simplified single-ended PA topologies where board space and gate bias count are less constrained than in Doherty layouts. |
Compared with MRF6VP2600HR5 and PD57060-E, the AFT20P060-4NR3 uniquely combines dual-path integration, internal matching, and Doherty-optimized gate voltage range - reducing component count and layout sensitivity in 6.3 W avg. macrocell PAs without sacrificing linearity or thermal performance.
Availability
AFT20P060-4NR3 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base station amplifiers, and DPD-enabled RRH designs requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for AFT20P060-4NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues the Airfast RF power portfolio, focusing on high-efficiency, thermally robust solutions for wireless infrastructure.
The AFT20P060-4NR3 belongs to the Airfast family of RF power LDMOS transistors engineered specifically for energy-efficient, digitally linearized cellular base station amplifiers operating in licensed sub-3 GHz spectrum.
FAQ
What is the maximum continuous drain current rating for the AFT20P060-4NR3?
The AFT20P060-4NR3 does not specify a maximum continuous drain current (ID) rating directly; instead, it defines safe operating area via voltage and power limits. Maximum ratings include VDSS = +65 Vdc and VDD = 32 Vdc, with thermal resistance RθJC = 0.56 °C/W enabling sustained 6.3 W avg. operation at TC = 77°C. Actual current depends on bias point - e.g., IDQ = 450 mA is used in typical W-CDMA characterization.
Does the AFT20P060-4NR3 require external input/output matching networks?
No. The AFT20P060-4NR3 is internally matched for 50 Ω operation across its specified 1805–2170 MHz bands. Freescale's test data (Figures 2 and 8) confirm full functional performance without external matching components, though external harmonic filtering and DC blocking remain necessary in final designs.
What is the gate threshold voltage range for the AFT20P060-4NR3?
The gate threshold voltage (VGS(th)) for the AFT20P060-4NR3 is specified as 1.5–2.5 Vdc (typ. 2.0 Vdc) under test condition VDS = 10 Vdc and ID = 36 µAdc. This low threshold enables efficient gate drive with standard 5–6 V bias supplies, consistent with its use in Class AB/Doherty architectures.
How does the AFT20P060-4NR3 support digital predistortion (DPD) systems?
The AFT20P060-4NR3 supports DPD through predictable, repeatable AM/AM and AM/PM characteristics: measured AM/PM is –20° max across 2110–2170 MHz, and ACPR remains stable (–42.5 dBc typ.) under 9.9 dB PAR excitation. Its gain flatness (0.33 dB over 60 MHz) and low temperature drift (ΔG = 0.012 dB/°C) simplify real-time DPD coefficient adaptation.
What is the meaning of the 'R3' suffix in AFT20P060-4NR3?
The 'R3' suffix indicates tape-and-reel packaging: 250 units per reel, 32 mm tape width, and 13-inch reel diameter. This format is optimized for automated SMT placement in high-volume manufacturing of cellular infrastructure equipment, and is distinct from the 'GNR3' variant which uses gull-wing leads.
AFT20P060-4NR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- OM-780-4L
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 2.17GHz
- Gain:
- 18.9dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 450 mA
- Power - Output:
- 60W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- OM-780-4L
AFT20P060-4NR3 FAQ
1.How can I place an order for AFT20P060-4NR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT20P060-4NR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT20P060-4NR3 reliable?
The price and inventory of AFT20P060-4NR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT20P060-4NR3 is usually 5 days.
3.What payment methods are accepted for AFT20P060-4NR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT20P060-4NR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT20P060-4NR3?
AFT20P060-4NR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT20P060-4NR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT20P060-4NR3?
For technical support, including AFT20P060-4NR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT20P060-4NR3 requirements.
6.How does Aetrix verify that AFT20P060-4NR3 is sourced from the original manufacturer or authorized distributors?
All AFT20P060-4NR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT20P060-4NR3 meets industry standards.
7.What is the process for return or replacement of AFT20P060-4NR3?
All AFT20P060-4NR3 units undergo pre-shipment inspection (PSI). If there is an issue with AFT20P060-4NR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT20P060-4NR3 part is unused and in its original packaging.
Return procedure for AFT20P060-4NR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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