NXP Semiconductors AFT20S015GNR1

Overview

AFT20S015GNR1 from NXP Semiconductors is a 1.5 W average RF power LDMOS transistor optimized for cellular base station amplifiers operating from 1805–2700 MHz. It delivers 17.6 dB power gain, 22% drain efficiency, and –44 dBc ACPR at 2140 MHz under single-carrier W-CDMA conditions (V_DD = 28 V, I_DQ = 132 mA, P_out = 1.5 W avg., PAR = 9.9 dB). Its TO-270G-2 gull-wing plastic package supports Doherty and digital predistortion architectures in macrocell and small-cell infrastructure.

For engineers reviewing the AFT20S015GNR1 datasheet, AFT20S015GNR1 pinout, AFT20S015GNR1 application, or AFT20S015GNR1 equivalent, key selection criteria include its validated 2140 MHz W-CDMA performance, negative gate-source voltage tolerance for Class C operation, thermal resistance of 4.2 °C/W, ESD robustness (HBM Class 1C), and moisture sensitivity level 3 compliance - all critical for high-reliability RF front-end design.

Technical Context

This N-channel enhancement-mode lateral MOSFET operates at 28 V DC supply with quiescent drain current fixed at 132 mA. Its internal input matching eliminates external input matching networks across 1805–2700 MHz, while the source-terminal backside metallization enables low-inductance grounding essential for broadband RF stability.

The device is characterized for three frequency bands: 1805–1880 MHz (18.1 dB G_ps, 22% η_D), 2110–2170 MHz (17.6 dB G_ps, 22% η_D), and 2300–2700 MHz (15.8 dB G_ps, 21% η_D at 2600 MHz). It supports 2.1 W average output in the 2600 MHz band and exhibits <0.05 dB gain flatness over 60 MHz bandwidth at P_out = 1.5 W avg.

Key Specifications

Pinout & Package

TO-270G-2 gull-wing plastic package with exposed backside source terminal. The case serves as the RF output (V_DS) connection and thermal path; the top-side leads are RFin/V_GS (gate) and RFout/V_DS (drain).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6P21190HR5 and AFM36H035N, AFT20S015GNR1 uniquely balances 1.5 W linear output, 1805–2700 MHz multiband coverage, and gull-wing manufacturability - making it the only option qualified for both legacy LTE and early 5G FR1 coexistence in compact RRU form factors.

Availability

AFT20S015GNR1 is available at Aetrix Electronics and suitable for cellular infrastructure, active antenna systems, and distributed RF networks requiring stable component supply across multi-year production cycles and evolving 4G/5G band requirements.

Supply support for AFT20S015GNR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology since the Freescale acquisition.

AFT20S015GNR1 belongs to the AIRFAST® RF Power LDMOS family, engineered specifically for energy-efficient, thermally robust, and digitally linearizable power amplification in next-generation wireless infrastructure equipment.

FAQ

What is the maximum continuous drain current rating for AFT20S015GNR1?

The AFT20S015GNR1 has no standalone maximum continuous drain current rating; instead, its safe operating area is defined by maximum ratings including V_DSS = +65 V, V_GS = –6.0 to +10 V, and T_J ≤ +225 °C. At V_DD = 28 V and I_DQ = 132 mA, the device delivers 1.5 W average RF output with 22% efficiency. Derating follows the 0.1 W/°C rule above 25 °C case temperature per Table 1.

Does AFT20S015GNR1 require external input matching components?

No, AFT20S015GNR1 is internally input-matched for 50 Ω across 1805–2700 MHz, eliminating the need for external input matching networks in standard applications. This is confirmed in the "Features" section and validated in Tables 5–9 test circuit layouts, where no input matching capacitors or inductors are used on the gate path.

What is the thermal resistance junction-to-case for AFT20S015GNR1?

The thermal resistance junction-to-case (R_θJC) for AFT20S015GNR1 is 4.2 °C/W, measured at T_C = 77 °C, 1.5 W CW, 28 Vdc, I_DQ = 132 mA, and 2140 MHz (Table 2). This value assumes proper solder attachment of the backside source terminal to a thermally conductive PCB plane per AN1907 reflow guidelines.

Can AFT20S015GNR1 operate in Class C mode?

Yes, AFT20S015GNR1 supports Class C operation due to its extended negative gate-source voltage range of –6.0 V, explicitly cited in the "Features" section as enabling improved Class C performance. This allows efficient narrowband amplification with reduced conduction angle, provided gate bias and drive level are set accordingly.

Is AFT20S015GNR1 qualified for 2600 MHz 5G NR applications?

Yes, AFT20S015GNR1 is characterized up to 2700 MHz with verified performance at 2600 MHz: 15.8 dB G_ps, 21% η_D, –43 dBc ACPR, and 8.5 dB PAR at P_out = 2.1 W avg. (page 1). These metrics meet baseline linearity and efficiency requirements for 5G NR n41 (2496–2690 MHz) and n7 (2500–2570 MHz) deployments.