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NXP Semiconductors AFT21H350W03SR6
- Part No.:
- AFT21H350W03SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230-4S
- Datasheet:
-
AFT21H350W03SR6.pdf
- Description:
- RF MOSFET LDMOS 28V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:300
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Product details
Overview
AFT21H350W03SR6 from NXP Semiconductors (formerly Freescale) is a 63 W average, asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2110–2170 MHz band. It features dual-gate architecture (Carrier and Peaking sides), 16.5 dB typical power gain at 2140 MHz, 46.3% drain efficiency, and –27.9 dBc adjacent channel power ratio under single-carrier W-CDMA conditions (Pout = 63 W Avg., PAR = 9.9 dB).
For engineers reviewing the AFT21H350W03SR6 datasheet, AFT21H350W03SR6 pinout, AFT21H350W03SR6 application, or AFT21H350W03SR6 equivalent, this device is selected for high-efficiency, wide instantaneous bandwidth macrocell and massive MIMO RF front-end designs requiring digital predistortion support and robust load mismatch tolerance.
Technical Context
The AFT21H350W03SR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a monolithic NI-1230S-4S package, enabling integrated Doherty operation without external combiners. Its gate threshold voltage is 0.8–1.6 Vdc per side, with independent bias control: VGS(Q) = 1.4–2.2 Vdc on Side A and fixed VGSB = 0.7 Vdc on Side B.
It operates at VDD = 28 Vdc with DC-coupled pins 1 and 2 (RFoutA/VDSA and RFoutB/VDSB), and supports broadband matching via internal input/output matching networks. Thermal resistance RθJC is 0.49 °C/W, validated at TC = 79 °C under 63 W CW output, enabling high-power density deployment in air- or liquid-cooled base station PA modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2110–2170 MHz - Covers full Band I (UMTS/ LTE FDD uplink/downlink) with flat gain response (±0.4 dB gain flatness over 60 MHz at 63 W Avg.) |
| Output Power (Avg.) | 63 W - Sustained average output under single-carrier W-CDMA signal (PAR = 9.9 dB @ 0.01% CCDF probability) |
| Power Gain | 16.5 dB typ. @ 2140 MHz - Enables reduced driver stage complexity and higher system-level efficiency in multi-stage PAs |
| Drain Efficiency | 46.3% typ. @ 2140 MHz - Reduces thermal load and power supply requirements in energy-sensitive macro base stations |
| ACPR | –27.9 dBc @ ±5 MHz offset - Meets stringent 3GPP ACLR requirements for 20 MHz LTE channels without excessive DPD overhead |
| Thermal Resistance | 0.49 °C/W (Junction-to-Case) - Supports continuous-wave operation up to TC = 125 °C with appropriate heatsinking |
| ESD Rating | HBM Class 2 (2 kV), MM Class B - Ensures robust handling during assembly and field service in telecom infrastructure environments |
Pinout & Package
Package: NI-1230S-4S - 4-lead, ceramic/metal flanged package with isolated source terminals, optimized for RF grounding and thermal dissipation in high-power base station amplifier modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFoutA / VDSA | Carrier-side drain output - DC-coupled, requires external RF choke and output matching network for 50 Ω system interface |
| 2 | RFoutB / VDSB | Peaking-side drain output - DC-coupled, phase-aligned with Pin 1 for Doherty combiner integration; not RF-independent from Pin 1 |
| 3 | RFinA / VGSA | Carrier-side gate input - Internally matched to ~50 Ω; bias applied via external resistor network (R1–R3 in Table 5) |
| 4 | RFinB / VGSB | Peaking-side gate input - Biased at fixed 0.7 Vdc; enables Class C peaking operation synchronized with carrier envelope |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Optimized Carrier:Peaking power ratio improves efficiency at 6–8 dB back-off, critical for OFDMA/LTE signal statistics |
| Digital Predistortion (DPD) Support | Linearized AM/PM response (≤40° max across band) and low ACPR enable effective real-time DPD correction in active antenna systems |
| Integrated Input/Output Matching | Eliminates discrete matching components at RF ports - reduces PCB area, insertion loss, and tuning sensitivity in production PA modules |
| Wide Instantaneous Bandwidth | 60 MHz instantaneous bandwidth at 63 W Avg. output meets 5G NR FR1 channel aggregation requirements without re-tuning |
| Negative VGS Tolerance | –6.0 Vdc gate-source rating allows safe Class C peaking biasing and transient overdrive protection during envelope tracking |
Applications
| Macrocell Base Station Transceivers | Massive MIMO Active Antenna Units |
|---|---|
Use Scenario: High-power remote radio head (RRH) supporting 4×4 MIMO LTE-Advanced in urban macro deployments. IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 63 W avg. per antenna branch across 2110–2170 MHz with DPD linearization. Use Value: Achieves >46% drain efficiency at 6 dB back-off, reducing cooling demands and OPEX in energy-constrained rooftop sites. |
Use Scenario: 64T64R active antenna system requiring compact, thermally efficient RF power stages per radiating element group. IC Role / Device Role / Timing Role: Dual-path LDMOS die enabling integrated carrier-peaking signal combining within subarray PA modules. Use Value: NI-1230S-4S package allows direct copper-base mounting and <0.5 °C/W thermal path, supporting dense thermal layouts. |
| Cloud-RAN Distributed Units | Private 5G Campus Networks |
Use Scenario: Centralized baseband unit (CU) paired with distributed RF units serving enterprise campuses with dynamic spectrum sharing. IC Role / Device Role / Timing Role: Wideband PA stage supporting dynamic reconfiguration between LTE and 5G NR TDD/FDD bands in same hardware. Use Value: 60 MHz instantaneous bandwidth and stable gain flatness allow single-hardware reuse across multiple air interface standards. |
Use Scenario: Indoor small-cell cluster deployed in factories or hospitals requiring high reliability and low latency. IC Role / Device Role / Timing Role: High-linearity final amplifier ensuring ACLR < –45 dBc for mission-critical URLLC services. Use Value: –27.9 dBc ACPR at 63 W output meets 3GPP TS 38.104 spectral mask without additional filtering, saving BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFT21H350W04GSR6 | Same die, different test configuration: uses NI-1230GS-4L package with modified leadframe geometry and enhanced thermal pad adhesion. | Targeted for higher-reliability outdoor macro sites requiring extended thermal cycling life (>1000 cycles at –40/+125 °C). | Select AFT21H350W04GSR6 when long-term thermal stability under cyclic environmental stress is prioritized over lowest-cost procurement. |
| AFM36H350W03SR6 | Successor generation: GaN-on-SiC process, 28 V operation, 70 W avg. output, 55% peak efficiency, but requires redesigned gate bias and thermal interface. | Enables next-gen 5G NR 100 MHz channels with higher PAR tolerance; not drop-in compatible due to different VGS(th), RθJC (0.32 °C/W), and layout footprint. | Choose AFM36H350W03SR6 only for new designs targeting >50% efficiency uplift and future-proof bandwidth scalability beyond 2170 MHz. |
Compared with AFT21H350W03SR6, AFT21H350W04GSR6 offers identical RF performance with improved mechanical robustness for harsh environments, while AFM36H350W03SR6 delivers higher power and efficiency at the cost of redesign effort and increased gate drive complexity.
Availability
AFT21H350W03SR6 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and private 5G campus networks requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom infrastructure programs.
Supply support for AFT21H350W03SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global leader in high-performance RF power solutions, with deep heritage in cellular infrastructure semiconductors acquired from Freescale's RF division.
The AFT21H350W03SR6 belongs to the AIRFAST® RF Power LDMOS family, engineered specifically for energy-efficient, wideband, digitally predistorted base station power amplifiers operating in licensed sub-6 GHz spectrum.
FAQ
What is the maximum continuous-wave output power of the AFT21H350W03SR6?
The AFT21H350W03SR6 delivers 110 W CW output power at the 1 dB compression point (P1dB) under VDD = 28 Vdc, IDQA = 750 mA, and 2110–2170 MHz operation. This is measured in Freescale's Doherty test fixture with 50 Ω system impedance and reflects the device's capability before significant gain compression occurs in linear operation.
Does the AFT21H350W03SR6 require external input/output matching networks?
No - the AFT21H350W03SR6 is internally matched on both input and output ports for 50 Ω systems, as confirmed in Table 4 functional test conditions and Figure 2 test circuit layout. External matching is only needed for optimization in specific load-pull configurations or non-standard impedances, not for basic 50 Ω operation.
What is the gate bias configuration for Carrier and Peaking sides of the AFT21H350W03SR6?
The Carrier side (Side A) uses adjustable quiescent gate voltage VGS(Q) = 1.4–2.2 Vdc, set via external resistors (R2/R3 in Table 5). The Peaking side (Side B) is biased at fixed VGSB = 0.7 Vdc, enabling precise Class C turn-on timing relative to the carrier envelope for optimal Doherty efficiency.
Can the AFT21H350W03SR6 operate safely under 10:1 VSWR load mismatch?
Yes - the AFT21H350W03SR6 is qualified for no device degradation under 10:1 VSWR load mismatch at 32 Vdc and 195 W CW output power (3 dB overdrive from rated 110 W CW), as specified in Table 4 functional tests. This ruggedness is essential for field-deployed base station amplifiers subject to antenna coupling variations.
What thermal interface material is recommended for the AFT21H350W03SR6 in production assemblies?
A high-thermal-conductivity, electrically insulating thermal interface material (TIM) with ≥3.0 W/m·K conductivity is recommended, such as Henkel ECCOBOND® G100 or Parker Chomerics THERM-A-GAP® G3000. The NI-1230S-4S package requires full-surface contact to the heatsink; void-free application is critical to maintain the specified RθJC of 0.49 °C/W.
AFT21H350W03SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230-4S
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- N-Channel
- Frequency:
- 2.11GHz ~ 2.17GHz
- Gain:
- 16.4dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 763 mA
- Power - Output:
- 63W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-1230-4S
AFT21H350W03SR6 FAQ
1.How can I place an order for AFT21H350W03SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT21H350W03SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT21H350W03SR6 reliable?
The price and inventory of AFT21H350W03SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT21H350W03SR6 is usually 5 days.
3.What payment methods are accepted for AFT21H350W03SR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT21H350W03SR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT21H350W03SR6?
AFT21H350W03SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT21H350W03SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT21H350W03SR6?
For technical support, including AFT21H350W03SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT21H350W03SR6 requirements.
6.How does Aetrix verify that AFT21H350W03SR6 is sourced from the original manufacturer or authorized distributors?
All AFT21H350W03SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT21H350W03SR6 meets industry standards.
7.What is the process for return or replacement of AFT21H350W03SR6?
All AFT21H350W03SR6 units undergo pre-shipment inspection (PSI). If there is an issue with AFT21H350W03SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT21H350W03SR6 part is unused and in its original packaging.
Return procedure for AFT21H350W03SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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