NXP Semiconductors AFT23H201-24SR6

Overview

AFT23H201-24SR6 from NXP Semiconductors (formerly Freescale) is an asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating at 2300–2400 MHz. It delivers 45 W average output power at 28 Vdc, achieves 15.6 dB typical power gain and 46.2% drain efficiency under W-CDMA signal conditions, and supports digital predistortion correction in macrocell infrastructure.

For engineers reviewing the AFT23H201-24SR6 datasheet, AFT23H201-24SR6 pinout, AFT23H201-24SR6 application, or AFT23H201-24SR6 equivalent, key selection criteria include its dual-gate Doherty architecture, –28.9 dBc ACPR at 2300 MHz, 0.27 °C/W junction-to-case thermal resistance, and validated load-pull performance for carrier and peaking paths across the 2300–2400 MHz band.

Technical Context

The AFT23H201-24SR6 integrates two laterally diffused MOSFETs-Carrier (Side A) and Peaking (Side B)-in a single ACP-1230S-4L2L air-cavity package. Its gate threshold voltage is 0.8–1.6 Vdc per side, with independent bias control: VGSA(Q) = 1.4–2.2 Vdc (carrier quiescent), VGSB = 0.8 Vdc (peaking fixed bias). The device operates in Class AB/Class C hybrid mode enabled by extended negative gate-source voltage range (–6.0 Vdc).

Internally matched for 50 Ω systems, it supports single-carrier W-CDMA with 9.9 dB PAR input, delivering 8.1 dB output PAR at 0.01% CCDF probability. Thermal design is anchored to a maximum junction temperature of +225 °C and case temperature limit of +150 °C, with R_θJC = 0.27 °C/W measured at 45 W avg., 28 Vdc, 2350 MHz.

Key Specifications

Pinout & Package

Package: ACP-1230S-4L2L - Air-cavity ceramic/metal flanged package with solderable baseplate, optimized for RF thermal and electrical performance in macrocell PAs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2450HR6 and AFM30L200-24SR6, the AFT23H201-24SR6 uniquely delivers asymmetrical Doherty integration in a single package-reducing bill-of-materials count, eliminating combiner loss, and enabling tighter thermal coupling between carrier and peaking paths for improved efficiency at back-off.

Availability

AFT23H201-24SR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, massive MIMO active antennas, and private LTE infrastructure requiring stable component supply and long-term industrial availability.

Supply support for AFT23H201-24SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global leader in high-performance RF power solutions, with heritage from Freescale's RF division. It specializes in GaN and LDMOS transistors for wireless infrastructure.

The AFT23H201-24SR6 belongs to the AIRFAST® RF Power portfolio, engineered specifically for energy-efficient, digitally predistorted Doherty amplifiers in 4G/5G cellular base stations operating below 3.8 GHz.

FAQ

What is the recommended gate bias sequence for AFT23H201-24SR6 during power-up?

The AFT23H201-24SR6 requires controlled bias sequencing to prevent latch-up or gate overstress. First apply VGSB = 0.8 Vdc to the peaking side (Pin 5), then ramp VGSA(Q) to 1.4–2.2 Vdc on the carrier side (Pin 1), and finally apply VDD to Pins 2 and 4. This sequence ensures the peaking device remains non-conductive until carrier bias stabilizes. Full details are in Freescale Application Note AN1908.

Can AFT23H201-24SR6 operate outside the 2300–2400 MHz band?

The AFT23H201-24SR6 is characterized and guaranteed only for 2300–2400 MHz operation. While gain and efficiency remain usable down to 2100 MHz or up to 2700 MHz in narrowband configurations, ACPR, PAR, and load-pull contours degrade significantly outside this band. For 2600 MHz LTE Band 7 deployment, NXP recommends the AFT26H201-24SR6 variant instead of AFT23H201-24SR6.

What is the maximum continuous drain current rating for AFT23H201-24SR6?

The AFT23H201-24SR6 does not specify a maximum continuous drain current in its datasheet. Instead, safe operation is defined by junction temperature limits (–40 to +225 °C) and thermal resistance (R_θJC = 0.27 °C/W). At 45 W avg. output and 28 Vdc, IDQA is 500 mA (carrier quiescent), and peak pulsed current reaches ~12 A during W-CDMA peaks. Designers must ensure thermal design keeps T_J ≤ 225 °C under worst-case modulation.

Is AFT23H201-24SR6 pin-compatible with earlier Freescale AFT23H200 variants?

No, the AFT23H201-24SR6 is not pin-compatible with AFT23H200-series devices. Although both use the ACP-1230S-4L2L package, the AFT23H201-24SR6 reassigns Pin 2 (VBWA) and Pin 4 (VBWB) as dedicated bias rails-not VDD return paths-and prohibits VDD current delivery through Pins 3 and 6 per datasheet Note 1. Layout redesign is required for migration from AFT23H200 to AFT23H201-24SR6.

Does AFT23H201-24SR6 require external input/output matching networks?

No, the AFT23H201-24SR6 is internally matched for 50 Ω systems on both input and output ports, as confirmed in Table 5 and Figure 2 of the datasheet. External matching is unnecessary for standard 2300–2400 MHz operation. However, designers must implement proper DC blocking (e.g., ATC100B6R2CT500XT) and decoupling (e.g., TDK C5750X7S2A106M230KB) per the reference test circuit in Figure 2 and Table 6.