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NXP Semiconductors AFT23S170-13SR3
- Part No.:
- AFT23S170-13SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-6
- Datasheet:
-
AFT23S170-13SR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:4,168
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Product details
Overview
AFT23S170-13SR3 from NXP Semiconductors (formerly Freescale) is a 45 W average RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2300–2400 MHz band. It delivers 18.8 dB power gain, 33.9% drain efficiency, −33.9 dBc ACPR, −13 dB input return loss, and 6.8 dB output PAR at 45 W avg. under single-carrier W-CDMA conditions (28 V, 1100 mA IDQ).
For engineers reviewing the AFT23S170-13SR3 datasheet, AFT23S170-13SR3 pinout, AFT23S170-13SR3 application, or AFT23S170-13SR3 equivalent, this device is selected for Doherty PA stages, digital predistortion (DPD)-enabled macrocell transceivers, and high-efficiency 4G LTE infrastructure where thermal robustness and broadband linearity are critical.
Technical Context
This N-channel enhancement-mode lateral MOSFET operates with VDD = 28 V and quiescent drain current IDQ = 1100 mA. Its gate threshold voltage (0.9–1.7 V) and gate quiescent voltage (1.4–2.2 V) support stable Class AB/Doherty biasing, while the −6.0 to +10 V gate-source voltage rating enables robust negative VGS swing for Class C operation.
The device features internal input/output matching, optimized VBW resonance at 95 MHz for third-order IMD suppression, and a junction-to-case thermal resistance of 0.42 °C/W. It sustains 10:1 load mismatch at 32 Vdc without degradation and exhibits 0.015 dB/°C gain stability over −30°C to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2300–2400 MHz - Covers full LTE Band 40 (TDD) and part of Band 7 (FDD) for macrocell infrastructure. |
| Output Power (Avg.) | 45 W - Delivers rated linear power for single-carrier W-CDMA with 9.9 dB PAR at 0.01% CCDF probability. |
| Power Gain | 18.8 dB typical - Enables compact two-stage PA designs with sufficient margin before driver saturation. |
| Drain Efficiency | 33.9% typical - Reduces thermal load and DC power consumption in air-cooled outdoor base station cabinets. |
| ACPR (±5 MHz) | −33.9 dBc - Meets 3GPP ACLR requirements for 5 MHz channel spacing in LTE TDD deployments. |
| Input Return Loss | −13 dB - Indicates well-matched 50 Ω input impedance, minimizing need for external tuning networks. |
| Junction Temp Limit | +225°C - Supports high-power pulsed and CW operation with reliable long-term MTTF under thermal stress. |
Pinout & Package
Package: NI-780S-2L4S - Thermally enhanced ceramic/metal flange-mount package with 6-pin configuration, optimized for RF grounding and heat dissipation in base station PA modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFin / VGS | RF input port and gate bias terminal - Requires DC-blocking and gate bias network; sensitive to ESD (Class 2 HBM). |
| 2 | N.C. | No connection - Electrically isolated; must remain unconnected per layout guidelines. |
| 3 | VBW (1) | First bypass capacitor terminal for gate bias decoupling - Connects to low-inductance 0.3 pF capacitor for third-order IMD suppression. |
| 4 | VBW (1) | Second bypass capacitor terminal for gate bias decoupling - Paired with Pin 3 to form π-filter for gate supply noise rejection. |
| 5 | N.C. | No connection - Electrically isolated; must remain unconnected. |
| 6 | RFout / VDS | RF output and drain supply terminal - Carries high-current RF and DC; requires low-impedance path to VDD and output matching network. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for Doherty architecture | Enables high-efficiency back-off operation via precise load-pull contours for P1dB and peak efficiency tuning. |
| Integrated input/output matching | Eliminates external matching components at 2300–2400 MHz, reducing PCB area and assembly cost in multi-carrier PA modules. |
| VBW resonance at 95 MHz | Targets third-order intermodulation inflection point, improving adjacent channel leakage in wideband W-CDMA/LTE signals. |
| 10:1 load mismatch tolerance | Withstands antenna VSWR events up to 10:1 at 32 Vdc without performance degradation or reliability risk. |
| Tape-and-reel packaging (R3) | 250-unit reel with 44 mm tape width - Compatible with automated SMT placement for high-volume base station PA manufacturing. |
Applications
| Macrocell LTE Base Station | Digital Predistortion Transmitter |
|---|---|
|
Use Scenario: High-power remote radio head (RRH) transmitting 20 MHz LTE TDD channels in urban macrocells. IC Role / Device Role / Timing Role: Final-stage RF power amplifier in Doherty configuration, driven by pre-distorted signal from FPGA-based DPD engine. Use Value: Delivers 45 W avg. output with −33.9 dBc ACPR, meeting 3GPP TS 36.104 ACLR mask without post-correction filtering. |
Use Scenario: 4G LTE eNodeB with real-time digital predistortion correcting amplifier nonlinearity across 100 MHz bandwidth. IC Role / Device Role / Timing Role: Main amplifier in DPD-enabled PA chain, leveraging its 0.5 dB gain flatness and stable AM/PM (−14.3°) for accurate inverse modeling. Use Value: Enables >40 dB ACLR improvement via DPD, reducing out-of-band emissions and enabling spectral coexistence with adjacent bands. |
| 2300–2400 MHz TDD Small Cell | High-Efficiency W-CDMA Node B |
|
Use Scenario: Outdoor small cell unit deployed on street furniture supporting 2×2 MIMO LTE TDD in dense urban environments. IC Role / Device Role / Timing Role: Dual-path final-stage PA, each channel using AFT23S170-13SR3 in Class AB mode with shared thermal management. Use Value: Achieves 33.9% drain efficiency at 45 W avg., lowering system power draw and enabling passive cooling in compact enclosures. |
Use Scenario: 3G UMTS Node B operating with single-carrier W-CDMA at 9.9 dB PAR for voice/data aggregation. IC Role / Device Role / Timing Role: Linear RF power stage delivering 45 W avg. output with 18.8 dB gain and −13 dB IRL across 2300–2400 MHz. Use Value: Maintains EVM < 3.5% and ACPR < −33 dBc under real-world traffic loads, ensuring compliant 3GPP RSE performance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFM36H170-13SR3 | Higher P1dB (213 W vs. 147 W), same 2300–2400 MHz range, but 36 V operation and higher gate charge. | Better suited for high-backoff Doherty carrier amplifiers requiring >100 W PEP; less optimal for 28 V legacy systems. | Select when system VDD supports 36 V and peak envelope power >150 W is required; verify gate drive capability. |
| MRF6VP2450HR6 | 450 W P1dB, 2.4–2.5 GHz range, 28 V operation, but larger NI-780 package and no integrated VBW pins. | Targeted at higher-power macrocell applications; lacks built-in VBW terminals for simplified IMD tuning. | Choose for 2.4 GHz band expansion beyond 2400 MHz or when >100 W avg. output is needed; expect added external matching complexity. |
Compared with AFT23S170-13SR3, AFM36H170-13SR3 offers higher peak power at elevated voltage, while MRF6VP2450HR6 extends frequency coverage and output capability at the cost of layout flexibility and integrated linearization features.
Availability
AFT23S170-13SR3 is available at Aetrix Electronics and suitable for cellular infrastructure, macrocell base stations, and Doherty amplifier modules requiring stable component supply, traceable lot control, and long-term lifecycle support.
Supply support for AFT23S170-13SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues the Airfast RF power portfolio, specializing in high-efficiency GaN and LDMOS solutions for wireless infrastructure.
The AFT23S170-13SR3 belongs to the Airfast family of thermally robust, internally matched LDMOS transistors engineered specifically for energy-efficient, high-linearity 4G LTE and W-CDMA base station power amplifiers.
FAQ
What is the maximum continuous drain current rating for AFT23S170-13SR3?
The AFT23S170-13SR3 has no standalone maximum continuous drain current rating; instead, its safe operating area is defined by junction temperature limits (+225°C max), case temperature (−40°C to +150°C), and thermal resistance (0.42 °C/W). At TC = 25°C, it supports 94 W CW operation, derating linearly above that temperature. The 1100 mA IDQ is a typical quiescent bias point-not a maximum rating.
Does AFT23S170-13SR3 require external input/output matching networks?
No, the AFT23S170-13SR3 is internally matched for 50 Ω operation across 2300–2400 MHz, as confirmed in Table 4 footnote (4) and functional test conditions. External matching is only needed for narrowband optimization, harmonic filtering, or integration into specific Doherty combiner topologies-standard evaluation uses the reference circuit in Figure 2 without added matching.
What is the significance of the "R3" suffix in AFT23S170-13SR3?
The "R3" suffix indicates tape-and-reel packaging: 250 units per reel, 44 mm tape width, and 13-inch reel diameter. This format is optimized for automated surface-mount assembly in high-volume RF power amplifier module production, ensuring consistent orientation and ESD-safe handling per JESD22-A114 Class 2 compliance.
Can AFT23S170-13SR3 operate reliably under 10:1 VSWR load mismatch?
Yes-AFT23S170-13SR3 is qualified for 10:1 load mismatch at 32 Vdc and 230 W CW output power (3 dB overdrive from rated 178 W), with zero device degradation observed in Freescale's test fixture. This ruggedness is critical for outdoor base station deployments where antenna VSWR varies due to environmental factors.
What thermal interface material is recommended for mounting AFT23S170-13SR3?
Freescale recommends using a thermally conductive, electrically insulating interface material with ≤0.25 °C·in²/W thermal resistance (e.g., Bergquist Sil-Pad 1500ST or Parker Chomerics Thermonamic 3000). Mounting pressure must ensure full flange contact without warping; torque specification is 12–15 in·lb per screw for the NI-780S-2L4S package.
AFT23S170-13SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.4GHz
- Gain:
- 18.8dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 1.1 A
- Power - Output:
- 45W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-780S-6
AFT23S170-13SR3 FAQ
1.How can I place an order for AFT23S170-13SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT23S170-13SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT23S170-13SR3 reliable?
The price and inventory of AFT23S170-13SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT23S170-13SR3 is usually 5 days.
3.What payment methods are accepted for AFT23S170-13SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT23S170-13SR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT23S170-13SR3?
AFT23S170-13SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT23S170-13SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT23S170-13SR3?
For technical support, including AFT23S170-13SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT23S170-13SR3 requirements.
6.How does Aetrix verify that AFT23S170-13SR3 is sourced from the original manufacturer or authorized distributors?
All AFT23S170-13SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT23S170-13SR3 meets industry standards.
7.What is the process for return or replacement of AFT23S170-13SR3?
All AFT23S170-13SR3 units undergo pre-shipment inspection (PSI). If there is an issue with AFT23S170-13SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT23S170-13SR3 part is unused and in its original packaging.
Return procedure for AFT23S170-13SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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