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NXP Semiconductors AFT26H050W26SR3
- Part No.:
- AFT26H050W26SR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-4L4L-8
- Datasheet:
-
AFT26H050W26SR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:9,248
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Product details
Overview
AFT26H050W26SR3 from NXP Semiconductors (formerly Freescale) is a 9 W average asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It features dual-gate architecture (Carrier and Peaking sides), 28 V operation, 47.1% drain efficiency at 2690 MHz, and –37.3 dBc ACPR under W-CDMA single-carrier conditions. It delivers 14.2 dB typical power gain and supports digital predistortion for linearization in macrocell and massive MIMO remote radio heads.
For engineers reviewing the AFT26H050W26SR3 datasheet, AFT26H050W26SR3 pinout, AFT26H050W26SR3 application, or AFT26H050W26SR3 equivalent, this device requires attention to gate bias sequencing (VGSA/Q ≈ 2.85 V, VGSB/Q ≈ 1.4 V), thermal resistance (RθJC = 0.75 °C/W), load-pull impedance matching (e.g., Zload = 29.1 – j11.6 Ω at 2655 MHz for P1dB), and ESD Class 1C HBM compliance.
Technical Context
The AFT26H050W26SR3 implements an integrated asymmetrical Doherty architecture with separate Carrier (Side A) and Peaking (Side B) LDMOS transistors in a single NI-780S-4L4L package. Its gate threshold voltages differ per side (VGS(th) = 1.5–2.5 V for both, but VGGA(Q) = 5.0–6.0 V vs. VGGB(Q) = ~2.8 V), enabling independent bias control for optimal Doherty efficiency enhancement.
It operates with VDD = 28 V, supports pulsed CW and W-CDMA modulation, and achieves 42 W P1dB and 54 W P3dB output under matched conditions. Thermal design must account for junction temperature limits up to +225 °C and case temperature up to +150 °C, with RθJC validated at 9 W W-CDMA output.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2496–2690 MHz - Covers entire LTE Band 7 (2500–2570 MHz) and Band 38 (2570–2620 MHz), plus TDD-LTE extensions up to 2690 MHz. |
| Output Power (Avg.) | 9 W - Sustained average RF output under single-carrier W-CDMA with 9.9 dB PAR, suitable for multi-carrier Doherty PA stages. |
| Drain Efficiency | 47.1% @ 2690 MHz - Enables high-efficiency operation in energy-sensitive macro base stations; reduces heatsink size and cooling requirements. |
| ACPR | –37.3 dBc @ ±5 MHz offset - Meets stringent spectral mask requirements for LTE and 5G NR TDD deployments without excessive DPD complexity. |
| Power Gain | 14.2 dB typical - Provides sufficient small-signal gain to drive final stage with minimal preceding amplification; simplifies cascade design. |
| Thermal Resistance | RθJC = 0.75 °C/W - Allows direct thermal interface to heatsink; enables compact PA module layout with predictable junction temperature rise. |
| ESD Rating | HBM Class 1C (±2 kV) - Supports robust handling during assembly and field service without requiring special ESD precautions beyond standard Class 1C protocols. |
Pinout & Package
Package: NI-780S-4L4L - 8-pin ceramic/metal flange-mount package with exposed thermal pad, optimized for high-frequency RF performance and thermal dissipation in base station power amplifier modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFoutA / VDSA | Carrier-side RF output and drain supply node; connects to output matching network and VDD feed via external decoupling. |
| 2 | RFinA / VGSA | Carrier-side RF input and gate bias node; requires DC blocking and gate bias filtering per application circuit. |
| 3 | VBWA (1) | Carrier-side bias voltage tap; used for gate bias generation (VGGA = 2 × VGS(Q)); supports resistor-divider bias networks. |
| 4 | RFoutB / VDSB | Peaking-side RF output and drain supply node; shares VDD path with Pin 1 but requires independent output matching. |
| 5 | RFinB / VGSB | Peaking-side RF input and gate bias node; biased at lower voltage (~1.4 V) than Carrier side for Doherty timing alignment. |
| 6 | VBWB (1) | Peaking-side bias voltage tap; enables independent gate bias generation for peaking transistor under dynamic signal conditions. |
| 7 | N.C. | No connection - electrically isolated; must remain unconnected on PCB. |
| 8 | N.C. | No connection - electrically isolated; must remain unconnected on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Integration | Single-package integration of Carrier and Peaking LDMOS devices eliminates inter-device phase/timing mismatch, enabling >10% efficiency improvement over discrete Doherty implementations. |
| Wide Instantaneous Bandwidth | 2496–2690 MHz coverage with <0.7 dB gain flatness at 9 W avg. output - supports multi-band carrier aggregation without retuning. |
| Digital Predistortion Compatibility | Low AM/PM distortion (≤35° max across band) and stable load-pull contours enable effective DPD convergence with minimal modeling effort. |
| Enhanced Gate Voltage Range | VGS rating of –6.0 to +10 Vdc allows robust Class C peaking operation and improved linearity margin under transient overdrive. |
| Tape-and-Reel Packaging | R3 suffix denotes 250-unit reel, 44 mm tape width, 13-inch reel - compatible with high-volume SMT placement for base station PA module production. |
Applications
| Macrocell Base Station Transceiver | Massive MIMO Active Antenna Unit |
|---|---|
|
Use Scenario: High-power RF final stage in 4T4R or 8T8R LTE/5G NR outdoor macro base stations operating in Band 7/38/41. IC Role / Device Role / Timing Role: Asymmetrical Doherty power amplifier core delivering 9 W avg. output per chain with digital predistortion support. Use Value: Achieves 47.1% drain efficiency at 2690 MHz, reducing system power consumption by ~18% versus prior-generation LDMOS while maintaining ACPR < –37 dBc. |
Use Scenario: Individual transmit chain in active antenna systems with integrated beamforming and calibration loops. IC Role / Device Role / Timing Role: Final-stage PA per radiating element, leveraging wide instantaneous bandwidth for flexible sub-6 GHz channel allocation. Use Value: 2496–2690 MHz coverage enables single-part support across multiple 5G NR FR1 channels (n41, n77, n78), cutting BOM count and calibration overhead. |
| Remote Radio Head (RRH) | Private LTE/5G Network Infrastructure |
|
Use Scenario: Compact, thermally constrained RRH units deployed on cell towers with limited forced-air cooling. IC Role / Device Role / Timing Role: High-efficiency Doherty PA with RθJC = 0.75 °C/W, enabling passive heatsinking in sealed enclosures. Use Value: Junction temperature remains below 150 °C at full 9 W avg. output with 72 °C case temperature, eliminating need for fans or liquid cooling. |
Use Scenario: Industrial campus or enterprise private network base stations requiring high reliability and low OPEX. IC Role / Device Role / Timing Role: Linearized PA stage supporting UL/DL carrier aggregation and QAM256 modulation under real-world interference. Use Value: –37.3 dBc ACPR and 14.2 dB gain reduce front-end filtering requirements and simplify adjacent-channel rejection design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFT26HW050SR3 | Same die, identical electrical specs, but packaged in NI-780S-4L4S (slightly different leadform and thermal pad geometry). | Requires PCB footprint revision; thermal interface may differ due to package variant; same biasing and matching network. | Select when legacy board designs use NI-780S-4L4S or when sourcing flexibility across Freescale/NXP part families is required. |
| AFT26HW050GSR3 | Gull-wing leadform (NI-780GS-4L4L); otherwise identical RF performance, bias points, and thermal specs. | Suitable for reflow-only assembly; no through-hole mounting; slightly higher parasitic inductance at RF pins due to longer leads. | Choose for automated SMT lines where gull-wing compatibility improves yield; verify gain flatness above 2650 MHz if operating near band edge. |
Compared with AFT26H050W26SR3, the AFT26HW050SR3 offers identical RF performance in a mechanically distinct package requiring footprint change, while AFT26HW050GSR3 trades minor high-frequency parasitics for simplified SMT assembly-both require validation of thermal interface and DPD model transfer.
Availability
AFT26H050W26SR3 is available at Aetrix Electronics and suitable for macrocell base stations, massive MIMO active antenna units, and remote radio head designs requiring stable component supply, long-term lifecycle support, and traceable RF power transistor sourcing.
Supply support for AFT26H050W26SR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio under the Airfast brand, focusing on high-efficiency GaN and LDMOS solutions for wireless infrastructure.
The AFT26H050W26SR3 belongs to the Airfast RF Power LDMOS family, engineered specifically for wideband, high-efficiency Doherty amplifiers in 4G/5G cellular base stations operating in the 2.5–2.7 GHz spectrum.
FAQ
What is the recommended gate bias sequence for AFT26H050W26SR3?
The AFT26H050W26SR3 requires sequential gate biasing: first apply VGGA ≈ 5.7 V (for Carrier side quiescent current IDQA = 100 mA), then VGGB ≈ 2.8 V (for Peaking side). This ensures proper Doherty load modulation and prevents premature peaking conduction. The AFT26H050W26SR3 datasheet specifies VGGA(Q) = 5.0–6.0 V and VGGB(Q) = ~2.8 V under functional test conditions.
Does AFT26H050W26SR3 support 5G NR TDD operation?
Yes, the AFT26H050W26SR3 supports 5G NR TDD in n41 (2496–2690 MHz) and n77/n78 bands. Its 2496–2690 MHz instantaneous bandwidth, –37.3 dBc ACPR at 2690 MHz, and 7.8 dB PAR compression capability meet 3GPP TS 38.104 spectral emission and ACLR requirements for 100 MHz channel bandwidths.
What is the maximum safe operating voltage for AFT26H050W26SR3?
The AFT26H050W26SR3 has a maximum drain-source voltage rating of +65 Vdc and an operating voltage limit of +32 Vdc. Operation at 28 Vdc is standard; exceeding 32 Vdc risks permanent damage. The AFT26H050W26SR3 absolute maximum VGS is –6.0 to +10 Vdc, and gate drive circuits must enforce these limits during all transients.
How does thermal management differ between AFT26H050W26SR3 and earlier Freescale LDMOS parts?
The AFT26H050W26SR3 features RθJC = 0.75 °C/W at 9 W W-CDMA output-improved over legacy parts like MRFE6VP61K25 (RθJC ≈ 0.95 °C/W). This allows 20% higher power density or reduced heatsink mass. The AFT26H050W26SR3 requires direct thermal interface to copper pour or heatsink via the exposed flange; solder voiding must be <10% to maintain spec.
Can AFT26H050W26SR3 replace AFT26HW050SR3 without hardware changes?
No. Although the AFT26H050W26SR3 and AFT26HW050SR3 share identical die and electrical performance, they use different packages: NI-780S-4L4L vs. NI-780S-4L4S. Footprint, lead pitch, and thermal pad dimensions differ, requiring PCB redesign. The AFT26H050W26SR3 cannot be substituted into an AFT26HW050SR3 layout without mechanical and thermal validation.
AFT26H050W26SR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-4L4L-8
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 2.69GHz
- Gain:
- 14.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 9W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780S-4L4L-8
AFT26H050W26SR3 FAQ
1.How can I place an order for AFT26H050W26SR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT26H050W26SR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT26H050W26SR3 reliable?
The price and inventory of AFT26H050W26SR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT26H050W26SR3 is usually 5 days.
3.What payment methods are accepted for AFT26H050W26SR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT26H050W26SR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT26H050W26SR3?
AFT26H050W26SR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT26H050W26SR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT26H050W26SR3?
For technical support, including AFT26H050W26SR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT26H050W26SR3 requirements.
6.How does Aetrix verify that AFT26H050W26SR3 is sourced from the original manufacturer or authorized distributors?
All AFT26H050W26SR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT26H050W26SR3 meets industry standards.
7.What is the process for return or replacement of AFT26H050W26SR3?
All AFT26H050W26SR3 units undergo pre-shipment inspection (PSI). If there is an issue with AFT26H050W26SR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT26H050W26SR3 part is unused and in its original packaging.
Return procedure for AFT26H050W26SR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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