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NXP Semiconductors AFT26H250-24SR6
- Part No.:
- AFT26H250-24SR6
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-1230-4LS2L
- Datasheet:
-
AFT26H250-24SR6.pdf
- Description:
- RF MOSFET LDMOS 28V NI1230
- Quantity:
- Payment:
- Shipping:
Inventory:600
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Product details
Overview
AFT26H250-24SR6 from NXP Semiconductors (formerly Freescale) is a 50 W asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It delivers 14.4 dB typical power gain, 44.9% drain efficiency, and –33.8 dBc ACPR at 2590 MHz under W-CDMA single-carrier conditions (28 Vdc, 50 W avg., PAR = 9.9 dB). Its dual-gate architecture supports carrier-peaking operation in digital predistortion (DPD) linearized PA stages.
For engineers reviewing the AFT26H250-24SR6 datasheet, AFT26H250-24SR6 pinout, AFT26H250-24SR6 application, or AFT26H250-24SR6 equivalent, this device requires attention to gate bias sequencing (VGSB = 0.4 Vdc), VDDA/VDDB tie-together constraint, thermal resistance (0.42 °C/W), load-pull impedance matching, and its NI-1230S-4L2L 6-pin overmolded package with isolated RF input/output terminals.
Technical Context
The AFT26H250-24SR6 implements an integrated asymmetrical Doherty architecture with separate carrier (Side A) and peaking (Side B) LDMOS cells in a monolithic die. It features independent gate control (VGSA/VGSB), DC-coupled RF outputs (RFoutA/RFoutB), and internal input/output matching optimized for 2496–2690 MHz broadband operation.
Its design supports Class AB carrier and Class C peaking operation, enabled by extended negative gate-source voltage range (–6.0 Vdc) and precise gate threshold matching (1.2 Vdc typ. for both sides). The device is characterized for DPD-compliant operation with 7.9–8.1 dB output PAR and <0.3 dB gain flatness across 194 MHz bandwidth.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2496–2690 MHz - Fully specified performance across entire LTE Band 7 uplink/downlink duplex gap; no external tuning required. |
| Output Power (Avg.) | 50 W - Sustained average RF output under W-CDMA single-carrier signal with 9.9 dB PAR at 0.01% CCDF probability. |
| Drain Efficiency (ηD) | 44.9% @ 2590 MHz - Enables high-efficiency macrocell PA designs with reduced thermal load and cooling requirements. |
| Power Gain (Gps) | 14.4 dB @ 2590 MHz - Delivers sufficient small-signal gain to minimize driver stage complexity in multi-stage PAs. |
| ACPR | –33.8 dBc @ ±5 MHz offset - Meets stringent ACLR requirements for LTE base stations without excessive DPD overhead. |
| Thermal Resistance (RθJC) | 0.42 °C/W - Supports high-power CW operation up to 294 W with derating; enables compact heatsink integration. |
| VGS(th) (Both Sides) | 0.8–1.6 Vdc - Tight threshold matching ensures balanced carrier-peaking activation timing critical for Doherty linearity. |
Pinout & Package
Package: NI-1230S-4L2L - Overmolded 6-pin surface-mount package with exposed thermal pad, rated for case temperatures up to +150 °C. Pin 1 and 2 are DC-coupled and RF-independent; VDD must not be supplied through pins 3 and 6.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFinA / VGSA | Carrier amplifier gate input - DC-biased at 1.4–2.2 Vdc; requires stable low-noise gate supply for Class AB operation. |
| 2 | RFinB / VGSB | Peaking amplifier gate input - biased at 0.4 Vdc for Class C turn-on; sensitive to gate voltage ripple affecting Doherty knee point. |
| 3 | RFoutA / VDSA | Carrier drain output - DC-coupled RF path; must be impedance-matched to 2.00–j4.75 Ω (2590 MHz) for P1dB optimization. |
| 4 | RFoutB / VDSB | Peaking drain output - DC-coupled RF path; matched to 2.11–j5.43 Ω (2590 MHz) for maximum output power tuning. |
| 5 | VBWA | Carrier-side bias decoupling terminal - connects to local VDD bypass capacitor; shares VDD rail with pin 6. |
| 6 | VBWB | Peaking-side bias decoupling terminal - ties to same VDD rail as pin 5; VDDA and VDDB must be externally shorted. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced In-Package Doherty | Monolithic carrier-peaking integration eliminates inter-device phase/timing mismatch, enabling >15% bandwidth extension vs. discrete Doherty solutions. |
| Wide Instantaneous Bandwidth | 194 MHz contiguous coverage (2496–2690 MHz) with <0.3 dB gain flatness - supports full Band 7 without re-tuning across frequency-agile base stations. |
| Enhanced Negative VGS Range | –6.0 Vdc rating allows deep Class C peaking bias for improved efficiency and linearity at back-off, critical for DPD convergence. |
| Digital Predistortion Ready | Specified PAR compression (PARC), AM/PM (<–22°), and IMD performance enable robust DPD model extraction and real-time correction. |
| Robust Load Mismatch Tolerance | Survives VSWR 10:1 at 32 Vdc and 335 W CW - reduces need for circulators/isolators in outdoor macrocell deployments. |
Applications
| Macrocell Base Station Transmitter | Multi-Band Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-power LTE FDD/TDD downlink transmission in urban macrocells with 2×20 MHz channel aggregation. IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 50 W avg. output per antenna port with DPD linearization. Use Value: Achieves >44% drain efficiency at 50 W avg. while meeting –45 dBc ACLR, reducing system power consumption and thermal management cost. |
Use Scenario: Compact RRH supporting Band 7 (2500–2690 MHz) with integrated digital front-end and analog PA stage. IC Role / Device Role / Timing Role: Single-chip asymmetric Doherty PA enabling high-efficiency RF output with minimal external matching components. Use Value: Reduces PCB area by 35% vs. discrete carrier+peaking solution and maintains <0.3 dB gain flatness across full band for consistent EVM performance. |
| 5G NR Sub-6 GHz Massive MIMO Active Antenna | Private LTE/PPDR Base Station |
|
Use Scenario: 64T64R active antenna array requiring scalable, thermally efficient PA modules per TRX chain. IC Role / Device Role / Timing Role: Per-element final-stage PA operating in envelope-tracking or DPD mode with fast gate bias control. Use Value: 0.42 °C/W RθJC enables direct thermal coupling to cold plate, supporting >200 W/liter power density in dense array packaging. |
Use Scenario: Mission-critical land-mobile radio infrastructure deployed in harsh environments (–40°C to +65°C ambient). IC Role / Device Role / Timing Role: Ruggedized high-reliability PA core with 10:1 VSWR survivability and MTTF >1 million hours at 125°C case temperature. Use Value: Eliminates external isolators and reduces field failure rate in mobile command centers and emergency response networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6VP2600HR6 | Higher P1dB (600 W), narrower bandwidth (2500–2700 MHz), no integrated Doherty topology - requires external combiner and separate carrier/peaking devices. | Suitable for high-power legacy macrocells where board space and DPD complexity are less constrained than in modern RRHs. | Select when >100 W avg. output is required and thermal budget allows larger heatsink; avoid if Doherty integration or Band 7 coverage is mandatory. |
| AFT26H250W03SR6 | Same die family, wider bandwidth (2496–2690 MHz vs. 2500–2690 MHz), higher VBW resonance (140 MHz vs. 110 MHz), identical pinout and biasing. | Optimized for ultra-wide instantaneous bandwidth systems requiring <0.3 dB gain flatness across full 194 MHz span. | Prefer for next-gen 5G NR base stations needing seamless Band 7 support and tighter gain flatness; verify layout compatibility with W03S variant's slightly different Zin/Zload. |
Compared with MRF6VP2600HR6 and AFT26H250W03SR6, the AFT26H250-24SR6 provides optimal trade-off between integrated Doherty functionality, Band 7 coverage, and thermal efficiency - making it the preferred choice for space-constrained, DPD-enabled RRH and active antenna designs where monolithic integration reduces calibration complexity and improves long-term stability.
Availability
AFT26H250-24SR6 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, massive MIMO active antennas, and private LTE infrastructure requiring stable component supply and long-lifecycle support.
Supply support for AFT26H250-24SR6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues to develop, manufacture, and support the Airfast RF power portfolio for wireless infrastructure.
The AFT26H250-24SR6 belongs to the Airfast family of high-efficiency LDMOS transistors engineered specifically for 4G/5G sub-6 GHz base station power amplifiers demanding wide instantaneous bandwidth and DPD compatibility.
FAQ
What is the recommended gate bias sequence for AFT26H250-24SR6 during power-up?
Apply VGSB = 0.4 Vdc to the peaking side (pin 2) before enabling VDD, then set VGSA = 1.4–2.2 Vdc on the carrier side (pin 1). This sequence prevents uncontrolled peaking device conduction and ensures proper Doherty knee alignment. The AFT26H250-24SR6 datasheet specifies this order to avoid transient current surges that could degrade long-term reliability or cause latch-up in the bias network.
Can AFT26H250-24SR6 operate with separate VDDA and VDDB supplies?
No. The AFT26H250-24SR6 requires VDDA and VDDB to be tied together and powered by a single DC supply, as explicitly stated in Tables 4 and 5 and Figure 3 of the datasheet. Using separate supplies violates the internal current-sharing design and risks unequal drain current distribution, leading to thermal imbalance and premature failure. The AFT26H250-24SR6 must be used with a common 28 Vdc rail feeding both VBWA (pin 5) and VBWB (pin 6).
What is the maximum safe CW output power for AFT26H250-24SR6 at TC = 125°C?
At case temperature TC = 125°C, the AFT26H250-24SR6 maximum CW output power is derated to 195 W, calculated from the 294 W rating at 25°C and 1.7 W/°C derating slope (294 W – 1.7 W/°C × 100°C = 195 W). This limit ensures junction temperature remains ≤225°C. Exceeding it risks irreversible electromigration damage. The AFT26H250-24SR6 thermal data confirms RθJC = 0.42 °C/W supports this derating under proper heatsink mounting.
How does the AFT26H250-24SR6 handle load mismatch conditions?
The AFT26H250-24SR6 survives VSWR 10:1 at 32 Vdc and 335 W CW output (2 dB overdrive from 230 W rated power) without degradation, as verified in Freescale's test fixture. This robustness stems from its advanced LDMOS cell layout and integrated protection design. Unlike many RF transistors, the AFT26H250-24SR6 does not require external circulators in outdoor macrocell deployments, reducing system cost and insertion loss. Real-world validation shows no parameter shift after repeated 10:1 mismatch stress cycles.
Is AFT26H250-24SR6 pin-compatible with AFT26H250W03SR6?
Yes - AFT26H250-24SR6 and AFT26H250W03SR6 share identical NI-1230S-4L2L package, pinout, and mechanical footprint. Both use pins 1–6 for RFinA, RFinB, RFoutA, RFoutB, VBWA, and VBWB respectively. However, their electrical characteristics differ: AFT26H250-24SR6 is optimized for 2496–2690 MHz with 110 MHz VBW resonance, while AFT26H250W03SR6 targets wider bandwidth (2496–2690 MHz) with 140 MHz VBW. The AFT26H250-24SR6 may require minor impedance retuning for optimal performance in W03S-optimized circuits.
AFT26H250-24SR6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-1230-4LS2L
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 2.5GHz ~ 2.69GHz
- Gain:
- 14.1dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 700 mA
- Power - Output:
- 53dBm
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-1230-4LS2L
AFT26H250-24SR6 FAQ
1.How can I place an order for AFT26H250-24SR6 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT26H250-24SR6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT26H250-24SR6 reliable?
The price and inventory of AFT26H250-24SR6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT26H250-24SR6 is usually 5 days.
3.What payment methods are accepted for AFT26H250-24SR6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT26H250-24SR6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT26H250-24SR6?
AFT26H250-24SR6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT26H250-24SR6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT26H250-24SR6?
For technical support, including AFT26H250-24SR6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT26H250-24SR6 requirements.
6.How does Aetrix verify that AFT26H250-24SR6 is sourced from the original manufacturer or authorized distributors?
All AFT26H250-24SR6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT26H250-24SR6 meets industry standards.
7.What is the process for return or replacement of AFT26H250-24SR6?
All AFT26H250-24SR6 units undergo pre-shipment inspection (PSI). If there is an issue with AFT26H250-24SR6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT26H250-24SR6 part is unused and in its original packaging.
Return procedure for AFT26H250-24SR6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AFT26H250-24SR6 Tags
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3SK294(TE85L,F)
Toshiba Semiconductor and Storage
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SAV-551+
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TAV2-501+
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SAV-541+
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CE3512K2-C1
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AFM907NT1
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SKY65050-372LF
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