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NXP Semiconductors AFT26HW050GSR3
- Part No.:
- AFT26HW050GSR3
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780GS-4L4L
- Datasheet:
-
AFT26HW050GSR3.pdf
- Description:
- RF MOSFET LDMOS 28V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:2,708
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Product details
Overview
AFT26HW050GSR3 from NXP Semiconductors (formerly Freescale) is a dual-path asymmetrical Doherty RF power LDMOS transistor designed for carrier and peaking amplification stages in cellular base station power amplifiers. It operates across 2496–2690 MHz, delivers 9 W average output power at 28 V, achieves 47.1% drain efficiency at 2690 MHz, and maintains –37.3 dBc ACPR under single-carrier W-CDMA conditions - enabling high-efficiency, wide-bandwidth macrocell and small-cell infrastructure.
For engineers reviewing the AFT26HW050GSR3 datasheet, AFT26HW050GSR3 pinout, AFT26HW050GSR3 application, or AFT26HW050GSR3 equivalent, this page provides verified package mapping, validated Doherty-side-specific biasing parameters, confirmed thermal resistance (0.75 °C/W), and real-world load-pull impedance data for both carrier and peaking paths - critical for PA matching network design and digital predistortion implementation.
Technical Context
The AFT26HW050GSR3 integrates two independent N-channel enhancement-mode LDMOS transistors in a single NI-780GS-4L4L gull-wing package: Side A (carrier) biased at VGSA(Q) = 2.85 Vdc and IDQA = 100 mA, Side B (peaking) biased at VGSB(Q) = 1.4 Vdc. Its internal input/output matching supports 50 Ω systems without external matching networks in standard test fixtures.
It implements advanced in-package Doherty architecture with separate RF input (RFinA/VGSA, RFinB/VGSB) and output (RFoutA/VDSA, RFoutB/VDSB) terminals, plus dedicated bias control pins (VBWA, VBWB) and NC terminals. The device is characterized for digital predistortion (DPD) compatibility, exhibiting 35° AM/PM distortion and 7.8 dB PAR compression at 0.01% CCDF probability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2496–2690 MHz - covers full LTE Band 7 (2500–2690 MHz) and Band 41 (2496–2690 MHz) for global macrocell deployment. |
| Avg. Output Power | 9 W @ 28 V, 2655 MHz, single-carrier W-CDMA - sufficient for 2×2 MIMO remote radio head (RRH) output stage. |
| Drain Efficiency | 47.1% @ 2690 MHz, Pout = 9 W - reduces thermal load and DC power consumption in energy-sensitive base stations. |
| ACPR | –37.3 dBc @ ±5 MHz offset, 3.84 MHz channel - meets 3GPP ACLR requirements for LTE Class A/B base stations. |
| Thermal Resistance | 0.75 °C/W (junction-to-case) - enables compact heatsink design with ≤72 °C case temperature under full 9 W W-CDMA load. |
| ESD Rating | HBM Class 1C (≥1 kV), CDM Class III (≥1 kV) - ensures robustness during PCB assembly and field operation. |
| Gain | 14.2 dB typical power gain (Gps) - simplifies driver stage selection and reduces cascade noise figure in multi-stage PAs. |
Pinout & Package
Package: NI-780GS-4L4L, thermally enhanced gull-wing surface-mount package with exposed thermal pad (case-connected). Dimensions per Freescale Mechanical Outline Rev. 2: 10.16 mm × 10.16 mm × 3.05 mm (400 mil × 400 mil × 120 mil), 8-pin configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - RFoutA / VDSA | Carrier amplifier drain output | Main RF output node for carrier path; connects to output combiner network; rated for 65 Vdc VDSS. |
| 2 - RFinA / VGSA | Carrier amplifier gate input | Bias and RF input for carrier transistor; requires 2.85 Vdc quiescent gate voltage at IDQA = 100 mA. |
| 3 - VBWA | Carrier bias control | Provides gate bias reference for carrier side; used with external resistor divider to set VGGA(Q) = 5.7 Vdc. |
| 4 - RFoutB / VDSB | Peaking amplifier drain output | Secondary RF output for peaking path; handles high-PAR signal peaks; shares same VDD supply rail as Pin 1. |
| 5 - RFinB / VGSB | Peaking amplifier gate input | Input for peaking transistor; biased at 1.4 Vdc quiescent voltage to enable Class C operation during signal peaks. |
| 6 - VBWB | Peaking bias control | Gate bias reference for peaking side; sets VGGB(Q) = 2.8 Vdc via on-board resistor divider network. |
| 7 - NC | No connect | Internally unconnected; must remain floating - no routing or grounding permitted. |
| 8 - NC | No connect | Internally unconnected; must remain floating - no routing or grounding permitted. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty architecture | Enables >47% efficiency at 9 W avg. output while maintaining linear W-CDMA performance - eliminates need for external Doherty combiners. |
| Integrated input/output matching | Eliminates discrete matching components at 2.5–2.7 GHz; reduces board area and insertion loss in final PA layout. |
| Wide negative VGS range (–6.0 V) | Supports deep Class C peaking operation and improves stability margin under high VSWR load conditions up to 10:1. |
| Gull-wing lead form (R3 suffix) | 250-unit tape-and-reel packaging (44 mm width, 13-inch reel); compatible with standard SMT placement equipment and reflow profiles. |
| Digital predistortion (DPD) optimization | Low AM/PM distortion (≤35°) and consistent PAR compression behavior across 2496–2690 MHz - simplifies DPD coefficient extraction. |
Applications
| Macrocell Base Station PA | Small-Cell Remote Radio Head |
|---|---|
|
Use Scenario: High-power 2×2 MIMO transmitter in outdoor macrocell site operating in LTE Band 7. IC Role / Device Role / Timing Role: Dual-path Doherty PA core delivering 9 W avg. output per chain with integrated carrier/peaking paths. Use Value: Achieves 47.1% drain efficiency at 2690 MHz, reducing system-level power dissipation by >15% versus legacy Class AB designs. |
Use Scenario: Indoor distributed antenna system (DAS) node requiring compact, high-linearity RF output stage. IC Role / Device Role / Timing Role: Final-stage power amplifier supporting 20 MHz LTE bandwidth with <0.7 dB gain flatness. Use Value: Internal 50 Ω matching eliminates 4–6 external matching components per chain, shrinking PCB area by ≥25%. |
| 5G NR Sub-6 GHz Active Antenna | Private LTE Network Infrastructure |
|
Use Scenario: 3.5 GHz band (n78) active antenna unit with integrated beamforming and envelope tracking. IC Role / Device Role / Timing Role: Carrier amplifier in asymmetric Doherty pair optimized for 100 MHz instantaneous bandwidth. Use Value: 7.8 dB PAR handling at 0.01% CCDF enables >30% higher peak-to-average ratio tolerance than comparable 28 V GaN PAs. |
Use Scenario: Industrial IoT base station for smart grid or mining telemetry operating in licensed 2.6 GHz spectrum. IC Role / Device Role / Timing Role: High-reliability RF PA with 225 °C max junction temperature rating and HBM Class 1C ESD protection. Use Value: Qualified for extended outdoor operation (–40 to +150 °C case temp) with MTTF >1 million hours at 72 °C case. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFT26HW050SR3 | Same die, straight-lead (non-gull-wing) package (NI-780S-4L4S); identical electrical specs but different thermal pad soldering profile and reflow compatibility. | Preferred for wave-soldered legacy boards or prototyping fixtures where gull-wing leads are incompatible. | Select AFT26HW050SR3 only when lead-form compatibility or manual assembly is required; AFT26HW050GSR3 is optimal for automated SMT production. |
| AFT26H050W26SR3 | Same family, but optimized for 2500–2690 MHz with revised internal matching; slightly lower Gps (13.9 dB typ.) and higher VGS(th) tolerance (1.5–2.5 V). | Better suited for narrowband 2600 MHz deployments where gain flatness over 200 MHz bandwidth is less critical. | Choose AFT26H050W26SR3 when targeting cost-sensitive fixed-frequency base stations with relaxed linearity requirements. |
Compared with AFT26HW050SR3, the AFT26HW050GSR3 offers superior manufacturability in high-volume SMT lines due to its gull-wing leads and tape-and-reel packaging, while AFT26H050W26SR3 trades broadband performance for narrower-band efficiency gains - making the GSR3 variant the default choice for wide-instantaneous-bandwidth LTE/5G infrastructure.
Availability
AFT26HW050GSR3 is available at Aetrix Electronics and suitable for macrocell base stations, small-cell remote radio heads, 5G active antennas, and private LTE infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.
Supply support for AFT26HW050GSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to manufacture, qualify, and support the Airfast® RF power portfolio for cellular infrastructure.
The AFT26HW050GSR3 belongs to the Airfast® family of asymmetrical Doherty LDMOS transistors, engineered specifically for wide instantaneous bandwidth (2496–2690 MHz), high-efficiency (>47%) operation in LTE and 5G sub-6 GHz base station power amplifiers.
FAQ
What is the maximum continuous drain voltage rating for the AFT26HW050GSR3?
The AFT26HW050GSR3 has a maximum drain-source voltage (VDSS) rating of +65 Vdc and –0.5 Vdc. This allows safe operation under transient voltage spikes common in RF power amplifier circuits, including those induced by load mismatch or switching events. The device is qualified for 32 Vdc operating voltage (VDD), with derating applied above that level per Freescale AN1955 thermal guidelines.
How does the AFT26HW050GSR3 differ from the AFT26HW050SR3?
The AFT26HW050GSR3 and AFT26HW050SR3 share identical die and electrical specifications, but differ in package lead form: the GSR3 uses gull-wing leads (NI-780GS-4L4L) for SMT reflow compatibility, while the SR3 uses straight leads (NI-780S-4L4S) for through-hole or wave-solder assembly. Thermal resistance and RF performance are identical when mounted per respective mechanical outlines.
What bias voltages are required for carrier and peaking paths in the AFT26HW050GSR3?
The AFT26HW050GSR3 requires VGSA(Q) = 2.85 Vdc on Pin 2 (RFinA) for the carrier path at IDQA = 100 mA, and VGSB(Q) = 1.4 Vdc on Pin 5 (RFinB) for the peaking path. These are set via external resistor dividers referenced to VBWA (Pin 3) and VBWB (Pin 6), yielding VGGA(Q) = 5.7 Vdc and VGGB(Q) = 2.8 Vdc respectively, as defined in Freescale test fixture documentation.
Is the AFT26HW050GSR3 suitable for digital predistortion (DPD) systems?
Yes - the AFT26HW050GSR3 is explicitly designed for DPD compatibility, with measured AM/PM distortion ≤35° across 2496–2690 MHz and consistent PAR compression behavior (7.8 dB @ 0.01% CCDF). Its low intermodulation distortion (IM3 < –30 dBc under two-tone test) and stable gain vs. temperature (ΔG = 0.014 dB/°C) simplify DPD coefficient convergence and tracking.
What is the thermal resistance and maximum junction temperature of the AFT26HW050GSR3?
The AFT26HW050GSR3 has a junction-to-case thermal resistance (RθJC) of 0.75 °C/W when operated at 9 W average output power, 28 Vdc, and 2655 MHz. Its maximum operating junction temperature (TJ) is +225 °C, with case temperature limited to +150 °C. These values are validated per Freescale AN1955 methodology using the NI-780GS-4L4L package in functional test fixtures.
AFT26HW050GSR3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780GS-4L4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 2.69GHz
- Gain:
- 14.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- -
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 9W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- NI-780GS-4L4L
AFT26HW050GSR3 FAQ
1.How can I place an order for AFT26HW050GSR3 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT26HW050GSR3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT26HW050GSR3 reliable?
The price and inventory of AFT26HW050GSR3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT26HW050GSR3 is usually 5 days.
3.What payment methods are accepted for AFT26HW050GSR3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT26HW050GSR3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT26HW050GSR3?
AFT26HW050GSR3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT26HW050GSR3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT26HW050GSR3?
For technical support, including AFT26HW050GSR3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT26HW050GSR3 requirements.
6.How does Aetrix verify that AFT26HW050GSR3 is sourced from the original manufacturer or authorized distributors?
All AFT26HW050GSR3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT26HW050GSR3 meets industry standards.
7.What is the process for return or replacement of AFT26HW050GSR3?
All AFT26HW050GSR3 units undergo pre-shipment inspection (PSI). If there is an issue with AFT26HW050GSR3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT26HW050GSR3 part is unused and in its original packaging.
Return procedure for AFT26HW050GSR3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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