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NXP Semiconductors AFT26HW050GSR3-NXP
- Part No.:
- AFT26HW050GSR3-NXP
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780S-4L4L-8
- Datasheet:
-
AFT26HW050GSR3-NXP.pdf
- Description:
- RF MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:129
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Product details
Overview
AFT26HW050GSR3 from NXP (formerly Freescale) is a 9 W average, asymmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It features dual-gate architecture (Carrier and Peaking sides), 28 V operation, and delivers 14.2 dB typical power gain and 47.1% drain efficiency at 2690 MHz under W-CDMA signal conditions (9 W avg., PAR = 9.9 dB).
For engineers reviewing the AFT26HW050GSR3 datasheet, AFT26HW050GSR3 pinout, AFT26HW050GSR3 application, or AFT26HW050GSR3 equivalent, this device is selected for wide instantaneous bandwidth, digital predistortion (DPD)-compatible linearity, and high-efficiency operation in macrocell and remote radio head (RRH) transmit stages requiring robust thermal performance and load mismatch resilience.
Technical Context
The AFT26HW050GSR3 implements an integrated asymmetrical Doherty topology with separate Carrier (Side A) and Peaking (Side B) LDMOS cells in a single NI-780GS-4L4L gull-wing package. Its gate biasing supports independent quiescent current control: VGSA(Q) = 2.85 Vdc (IDQA = 100 mA) and VGSB(Q) = 1.4 Vdc for optimal Doherty compression behavior.
It is internally matched for 50 Ω systems, operates with VDD supplied via pins 5 and 8, and supports pulsed CW and modulated W-CDMA waveforms. Thermal resistance RθJC is 0.75 °C/W at 9 W W-CDMA output, enabling stable operation up to +150 °C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 2496–2690 MHz - Covers entire LTE Band 7 (2500–2690 MHz) and TDD-LTE 2600 MHz deployments. |
| Avg. Output Power | 9 W - Sustained linear output under single-carrier W-CDMA with 9.9 dB PAR, enabling 2×2 MIMO macrocell PA stages. |
| Drain Efficiency (ηD) | 47.1% @ 2690 MHz - Reduces heat dissipation and DC power draw in energy-sensitive base station designs. |
| Power Gain (Gps) | 14.2 dB typical - Enables reduced driver stage complexity and higher overall system gain margin. |
| ACPR | –37.3 dBc @ ±5 MHz offset - Meets 3GPP ACLR requirements for LTE FDD/TDD without excessive DPD overhead. |
| Thermal Resistance (RθJC) | 0.75 °C/W - Supports compact heatsink integration and continuous operation at TC = 72 °C under full load. |
| VGS(th) (Side A/B) | 1.5–2.5 Vdc - Ensures stable turn-on across process and temperature for reliable Class AB/Class C carrier-peaking transition. |
Pinout & Package
Package: NI-780GS-4L4L - RoHS-compliant, gull-wing leaded ceramic/metal package with 4 mm × 4 mm footprint, optimized for RF thermal and electrical performance in high-power base station modules.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | RFoutA / VDSA | Carrier amplifier drain output - Connects to output matching network and hybrid coupler input for Doherty combiner. |
| 2 | RFinA / VGSA | Carrier amplifier gate input - Bias and RF signal path for main amplification branch; requires stable 2.85 Vdc quiescent gate voltage. |
| 3 | VBWA (1) | Carrier-side bias supply terminal - Optional VDD feed point; used with pin 5/8 for distributed power delivery and reduced trace inductance. |
| 4 | RFinB / VGSB | Peaking amplifier gate input - Activated only during signal peaks; biased at 1.4 Vdc for efficient Class C operation. |
| 5 | VBWB (1) | Peaking-side bias supply terminal - Dual-path VDD routing improves current sharing and reduces thermal hot spots under peak load. |
| 6 | N.C. | No connection - Electrically isolated pad; must remain unconnected per layout guidelines. |
| 7 | N.C. | No connection - Electrically isolated pad; must remain unconnected per layout guidelines. |
| 8 | RFoutB / VDSB | Peaking amplifier drain output - Delivers supplemental power during high-PAR events; phase-aligned with Carrier output via external coupler. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetrical Doherty Architecture | Enables >47% efficiency at 9 W avg. output while maintaining <–37 dBc ACPR - critical for spectral mask compliance in dense urban deployments. |
| Wide Instantaneous Bandwidth | Operates across 194 MHz (2496–2690 MHz) without retuning - simplifies multi-band RRH design and reduces calibration overhead. |
| Digital Predistortion (DPD) Readiness | Low AM/PM distortion (≤35°) and high linearity (IMD5 < –60 dBc) enable effective DPD convergence with minimal iteration cycles. |
| Enhanced Negative VGS Range | –6.0 Vdc rating allows deeper Class C peaking bias for improved back-off efficiency - extends battery life in remote sites. |
| Robust Load Mismatch Tolerance | Survives 10:1 VSWR at 32 Vdc and 35 W CW - eliminates need for circulators in outdoor macrocell antenna interfaces. |
Applications
| Macrocell Base Station Transmitter | Remote Radio Head (RRH) |
|---|---|
|
Use Scenario: High-power LTE FDD/TDD transmit chain in outdoor macrocell cabinets supporting 2×2 or 4×4 MIMO. IC Role / Device Role / Timing Role: Final-stage Doherty PA delivering 9 W avg. output per antenna port with integrated carrier-peaking functionality. Use Value: Achieves 47.1% drain efficiency at 2690 MHz, reducing system-level power consumption and cooling requirements by >15% vs. conventional Class AB PAs. |
Use Scenario: Compact, weatherized RRH unit mounted directly on cell tower, requiring high thermal density and broadband operation. IC Role / Device Role / Timing Role: Dual-path RF power transistor enabling asymmetric Doherty combining within tight PCB area constraints. Use Value: NI-780GS-4L4L package with 0.75 °C/W RθJC enables operation at TC = +150 °C - eliminates need for active cooling in sealed enclosures. |
| Small Cell Aggregator | Private LTE Network Base Unit |
|
Use Scenario: Indoor enterprise small cell deployment aggregating multiple pico/femto cells into a unified backhaul interface. IC Role / Device Role / Timing Role: Linear PA stage supporting 20 MHz LTE channel bandwidth with 9.9 dB PAR handling capability. Use Value: –37.3 dBc ACPR at ±5 MHz offset meets 3GPP TS 36.104 spectral mask without external filtering - lowers BOM cost and insertion loss. |
Use Scenario: Industrial private LTE network for smart grid, mining, or port automation requiring ruggedized, interference-resistant RF links. IC Role / Device Role / Timing Role: High-reliability RF power amplifier operating in licensed 2600 MHz spectrum with proven 10:1 VSWR survivability. Use Value: Validated 225 °C max junction temperature and Freescale MTTF calculator support >1 million hour field lifetime - critical for unattended infrastructure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFT26HW050SR3 | Same die, NI-780S-4L4S straight-lead package - lacks gull-wing form factor; higher assembly complexity and lower thermal reliability. | Preferred for prototyping or legacy board rework where gull-wing reflow is unavailable; not recommended for volume production. | Select AFT26HW050GSR3 for automated SMT lines and thermal-critical base station modules. |
| AFT26H050W26SR3 | Same frequency range and Doherty architecture but rated for 26 W P1dB - higher peak power capability with trade-off in efficiency at 9 W avg. (44.0% vs. 47.1%). | Suitable for future-proofed designs requiring headroom for 5G NR 2600 MHz uplink or multi-carrier aggregation. | Choose AFT26H050W26SR3 when system-level PAPR exceeds 10.5 dB or when supporting 3CC CA configurations. |
Compared with AFT26HW050SR3, the AFT26HW050GSR3 offers superior manufacturability and thermal performance due to its gull-wing leads, while AFT26H050W26SR3 trades slight efficiency reduction for greater peak power headroom-making the GSR3 optimal for cost- and thermally constrained LTE deployments.
Availability
AFT26HW050GSR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, private LTE networks, and industrial wireless infrastructure requiring stable component supply and long-term lifecycle support.
Supply support for AFT26HW050GSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio under the Airfast brand, focusing on high-efficiency GaN and LDMOS solutions for wireless infrastructure.
The AFT26HW050GSR3 belongs to the Airfast RF Power LDMOS family, engineered specifically for energy-efficient, broadband Doherty amplifiers in 4G/LTE and early 5G base station applications.
FAQ
What is the maximum operating junction temperature for the AFT26HW050GSR3?
The AFT26HW050GSR3 has a specified operating junction temperature range of –40 °C to +225 °C. This high TJ rating enables reliable operation in thermally demanding macrocell environments, especially when combined with its low 0.75 °C/W RθJC thermal resistance. Designers should use Freescale's MTTF calculator to validate lifetime under actual thermal conditions in their AFT26HW050GSR3 implementation.
How does the AFT26HW050GSR3 support digital predistortion (DPD) systems?
The AFT26HW050GSR3 supports DPD through low AM/PM distortion (≤35°), high linearity (IMD5 < –60 dBc), and consistent gain flatness (0.7 dB over 70 MHz). Its asymmetrical Doherty architecture maintains stable memoryless behavior across 2496–2690 MHz, enabling rapid DPD coefficient convergence. The AFT26HW050GSR3 is characterized with IQ-magnitude clipping and 9.9 dB PAR signals to match real-world DPD test conditions.
What is the difference between AFT26HW050GSR3 and AFT26HW050SR3?
The AFT26HW050GSR3 uses the NI-780GS-4L4L gull-wing package, while AFT26HW050SR3 uses the NI-780S-4L4S straight-lead package. Both share identical die and electrical specs, but the gull-wing leads of the AFT26HW050GSR3 provide superior solder joint reliability, lower thermal resistance, and compatibility with standard SMT reflow processes - making AFT26HW050GSR3 the preferred choice for volume production of base station hardware.
Can the AFT26HW050GSR3 operate with 32 VDC supply?
Yes - the AFT26HW050GSR3 has a maximum operating voltage rating of +32 VDC (VDD), validated for safe operation under transient overvoltage conditions. Its absolute maximum VDSS is +65 VDC, and it demonstrates no degradation at 32 VDC with 10:1 VSWR load mismatch testing. However, for optimal efficiency and linearity at 9 W avg., the recommended VDD remains 28 VDC per the characterization data in the AFT26HW050GSR3 datasheet.
What is the purpose of pins 3 (VBWA) and 5 (VBWB) on the AFT26HW050GSR3?
Pins 3 (VBWA) and 5 (VBWB) are auxiliary VDD supply terminals for the Carrier and Peaking sides respectively. They allow distributed power delivery alongside pins 5 and 8, reducing trace inductance and improving current sharing between the two amplifier paths. This dual-feed configuration minimizes thermal gradients and enhances stability under high-PAR modulation - a key design feature confirmed in the AFT26HW050GSR3 test fixture layout and load-pull characterization.
AFT26HW050GSR3-NXP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780S-4L4L-8
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 2.496GHz ~ 2.69GHz
- Gain:
- 14.2dB
- Voltage - Test:
- 28 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 9W
- Voltage - Rated:
- 65 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780S-4L4L-8
AFT26HW050GSR3-NXP FAQ
1.How can I place an order for AFT26HW050GSR3-NXP through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT26HW050GSR3-NXP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT26HW050GSR3-NXP reliable?
The price and inventory of AFT26HW050GSR3-NXP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT26HW050GSR3-NXP is usually 5 days.
3.What payment methods are accepted for AFT26HW050GSR3-NXP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT26HW050GSR3-NXP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT26HW050GSR3-NXP?
AFT26HW050GSR3-NXP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT26HW050GSR3-NXP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT26HW050GSR3-NXP?
For technical support, including AFT26HW050GSR3-NXP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT26HW050GSR3-NXP requirements.
6.How does Aetrix verify that AFT26HW050GSR3-NXP is sourced from the original manufacturer or authorized distributors?
All AFT26HW050GSR3-NXP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT26HW050GSR3-NXP meets industry standards.
7.What is the process for return or replacement of AFT26HW050GSR3-NXP?
All AFT26HW050GSR3-NXP units undergo pre-shipment inspection (PSI). If there is an issue with AFT26HW050GSR3-NXP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT26HW050GSR3-NXP part is unused and in its original packaging.
Return procedure for AFT26HW050GSR3-NXP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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