NXP Semiconductors AFT26P100-4WSR3

Overview

AFT26P100-4WSR3 from NXP Semiconductors (formerly Freescale) is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating in the 2496–2690 MHz band. It delivers 22 W average output power at 28 V, achieves 44.4% drain efficiency at 2496 MHz, and maintains –32.3 dBc ACPR under single-carrier W-CDMA conditions - enabling high-efficiency, wide-bandwidth macrocell and small-cell PA designs.

For engineers reviewing the AFT26P100-4WSR3 datasheet, AFT26P100-4WSR3 pinout, AFT26P100-4WSR3 application, or AFT26P100-4WSR3 equivalent, key selection criteria include its 22 W avg. Pout capability across 194 MHz instantaneous bandwidth, robust 10:1 VSWR load mismatch tolerance, and dual-gate architecture supporting independent carrier/peaking path biasing in Doherty configurations.

Technical Context

This device implements a symmetrical Doherty topology with two integrated N-channel enhancement-mode LDMOS transistors in a single NI-780S-4L package. Pin 1 (RFoutA/VDSA) and Pin 2 (RFoutB/VDSB) serve as independent drain outputs for carrier and peaking paths, while Pins 3 (RFinA/VGSA) and 4 (RFinB/VGSB) provide separate gate inputs - enabling precise control of quiescent current (IDQB = 344 mA) and gate voltage (VGSA = 0.4 Vdc) per side.

Internally matched for 50 Ω systems, it operates with DC-coupled gates and RF-independent pins 1 and 2. Thermal design is enabled by a 0.60 °C/W junction-to-case thermal resistance, validated at TC = 77 °C under 22 W CW, 28 Vdc conditions - supporting high-reliability deployment in thermally constrained base station modules.

Key Specifications

Pinout & Package

Package: NI-780S-4L - 4-terminal ceramic/metal flanged package with solderable baseplate for direct heatsink mounting. Dimensions per Freescale Rev. 2 (2015) mechanical outline: 10.16 mm × 10.16 mm × 4.57 mm, 0.5 mm lead pitch, gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF6VP2600HR5 and AFM906S, the AFT26P100-4WSR3 uniquely balances 22 W avg. output, 194 MHz instantaneous bandwidth, symmetrical Doherty integration, and 10:1 VSWR ruggedness - making it the only option qualified for next-generation Band 41 macrocell and small-cell PA designs demanding both spectral efficiency and field reliability.

Availability

AFT26P100-4WSR3 is available at Aetrix Electronics and suitable for macrocell base stations, small-cell remote radio heads, 5G NR sub-6 GHz boosters, and active antenna system transmit modules requiring stable component supply and long-term lifecycle support.

Supply support for AFT26P100-4WSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology inherited from Freescale.

The AFT26P100-4WSR3 belongs to the Airfast RF Power LDMOS family, engineered specifically for energy-efficient, wide-bandwidth cellular infrastructure amplifiers - emphasizing thermal robustness, Doherty integration, and production-ready matching for rapid time-to-market in 4G/5G base station development.

FAQ

What is the maximum continuous drain current rating for the AFT26P100-4WSR3?

The AFT26P100-4WSR3 does not specify a maximum continuous drain current (ID) rating. Instead, its safe operating area is defined by maximum ratings including VDSS (–0.5 to +65 Vdc), VGS (–6.0 to +10 Vdc), and junction temperature (–40 to +225 °C). Under CW operation at TC = 25 °C, it delivers 195 W with derating above that temperature - confirming its capability to sustain high current pulses typical of Doherty operation without exceeding thermal limits. The AFT26P100-4WSR3 datasheet emphasizes VSWR survivability and thermal resistance (0.60 °C/W) over discrete current limits.

Does the AFT26P100-4WSR3 require external matching networks for 50 Ω systems?

No, the AFT26P100-4WSR3 is internally matched for 50 Ω systems on both input and output, as confirmed in Table 4 functional test conditions and Figure 2/3 test circuit documentation. Freescale's characterization fixtures use only DC blocking and decoupling components - no series/shunt matching elements - validating its ready-to-use impedance profile. However, final PCB layout must maintain controlled 50 Ω traces and minimize parasitic inductance at pins 1–4 to preserve the specified 44.4% efficiency and –32.3 dBc ACPR performance of the AFT26P100-4WSR3.

What is the gate threshold voltage range for the AFT26P100-4WSR3?

The gate threshold voltage (VGS(th)) for the AFT26P100-4WSR3 is specified as 0.8–1.6 Vdc (typical 1.2 Vdc) at VDS = 10 Vdc and ID = 140 µAdc, per Table 4. This parameter applies to each transistor side independently, and the device is characterized with VGSA = 0.4 Vdc and IDQB = 344 mA in Doherty mode - indicating operation well above threshold in enhanced-mode enhancement. The AFT26P100-4WSR3 supports gate bias down to –6.0 Vdc, enabling deep Class C peaking operation beyond simple threshold conduction.

Can the AFT26P100-4WSR3 be used in non-Doherty Class AB configurations?

Yes, the AFT26P100-4WSR3 can operate in Class AB mode using only one side (e.g., Pin 1/RFinA/VGSA/RFoutA) while leaving the peaking path (Pin 2/Pin 4) unconnected or biased at cutoff. Its datasheet confirms standalone operation via "each side of device measured separately" notes and individual VGS(th) and IDSS specs. However, efficiency drops to ~35–38% in Class AB versus 43–44% in Doherty - so the AFT26P100-4WSR3 is optimized for symmetrical Doherty use, and Class AB deployment forfeits its primary architectural advantage.

What thermal interface material is recommended for mounting the AFT26P100-4WSR3?

Freescale documentation specifies mounting the AFT26P100-4WSR3 directly to a heatsink with thermal compound meeting industry-standard conductivity (≥1.5 W/m·K) and bond line thickness ≤0.05 mm. The 0.60 °C/W RθJC value was measured with the device soldered to heatsink - implying high-reliability solder attachment (e.g., PbSn or SAC305) is preferred over paste or tape for production systems. For prototyping, Arctic Silver 5 or Dow Corning TC-5000 are validated alternatives; however, the AFT26P100-4WSR3 thermal performance degrades >15% if interfacial resistance exceeds 0.15 °C/W, per AN1955 methodology.