NXP Semiconductors AFT26P100-4WSR3-NXP

Overview

AFT26P100-4WSR3 from NXP (formerly Freescale) is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station final-stage amplification in the 2496–2690 MHz band. It delivers 22 W average output power at 28 V, achieves 16.1 dB typical power gain and 43.5% drain efficiency at 2590 MHz under W-CDMA modulation, and supports 7.8 dB output PAR with –34.9 dBc ACPR - enabling high-efficiency, wideband macrocell and small-cell PA designs.

For engineers reviewing the AFT26P100-4WSR3 datasheet, AFT26P100-4WSR3 pinout, AFT26P100-4WSR3 application, or AFT26P100-4WSR3 equivalent, key selection criteria include its 22 W avg. RF output capability, symmetrical Doherty architecture, NI-780S-4L surface-mount package, thermal resistance of 0.60 °C/W, and validated 10:1 load mismatch tolerance at 32 Vdc - all critical for robust, high-reliability 4G LTE infrastructure deployment.

Technical Context

This device implements a dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET structure optimized for symmetrical Doherty operation. Its internal input/output matching enables broadband 194 MHz instantaneous bandwidth (2496–2690 MHz) without external tuning networks, while the isolated gate-source terminals (Pin 1 & 2) support independent biasing of carrier and peaking paths.

The AFT26P100-4WSR3 operates with fixed 28 V drain supply (VDDA = VDDB), requires separate gate quiescent voltage control (VGSA = 0.4–0.7 Vdc, VGSB = 1.3–2.1 Vdc), and sustains 225 °C junction temperature during CW operation - enabled by low R_θJC (0.60 °C/W) and thermally robust ceramic/metal package construction.

Key Specifications

Pinout & Package

Package: NI-780S-4L - thermally enhanced, surface-mount, 4-lead ceramic/metal package with exposed thermal pad; 32 mm tape width, 13-inch reel (R3 suffix = 250 units).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP2600HR5 and PD57018-E, the AFT26P100-4WSR3 provides superior 2.6 GHz LTE-specific performance through its monolithic symmetrical Doherty structure, delivering higher efficiency, better ACPR, and reduced system-level component count - making it the preferred choice for new 4G infrastructure designs targeting Band 7/Band 38.

Availability

AFT26P100-4WSR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, active antenna systems, and sub-6 GHz 5G NR infrastructure requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for AFT26P100-4WSR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio under the Airfast brand, focusing on high-efficiency GaN and LDMOS solutions for wireless infrastructure.

The AFT26P100-4WSR3 belongs to the Airfast RF Power LDMOS family, engineered specifically for wideband, high-efficiency Doherty amplifiers in 4G LTE and early 5G base station applications operating up to 2.7 GHz.

FAQ

What is the maximum continuous drain voltage rating for the AFT26P100-4WSR3?

The AFT26P100-4WSR3 has a maximum drain-source voltage (V_DSS) rating of +65 Vdc and –0.5 Vdc. This rating allows safe operation under transient overvoltage conditions common in RF PA circuits, including load mismatch events and switching transients. The device is rated for 32 Vdc operating voltage (V_DD) under normal CW conditions, consistent with standard 28 V telecom power distribution systems.

Does the AFT26P100-4WSR3 require external input/output matching networks?

No, the AFT26P100-4WSR3 is internally matched on both input and output for 50 Ω systems across 2496–2690 MHz. As confirmed in Table 4 and Figure 2–3 of the datasheet, the device achieves specified gain, efficiency, and ACPR without external matching components - though external harmonic terminations and gate bias networks remain necessary for stable Doherty operation. This internal matching reduces PCB area and design iteration time.

What is the gate threshold voltage specification for the AFT26P100-4WSR3?

The gate threshold voltage (V_GS(th)) for the AFT26P100-4WSR3 is specified as 0.8–1.6 Vdc (typ. 1.2 Vdc) at V_DS = 10 Vdc and I_D = 140 µAdc. This parameter applies to each side independently and defines the minimum gate voltage needed to initiate conduction - critical for setting precise quiescent bias points (e.g., VGSA = 0.4 Vdc for carrier path) in Doherty configurations.

How does the AFT26P100-4WSR3 handle load mismatch conditions?

The AFT26P100-4WSR3 is characterized to withstand 10:1 VSWR at 32 Vdc and 125 W CW output power without degradation, as verified in Freescale's production test fixture. This robustness eliminates the need for external isolators or circulators in antenna interface designs, directly supporting reliable operation in real-world base station environments where antenna impedance varies due to environmental factors or cable faults.

What thermal management guidance is provided for the AFT26P100-4WSR3?

The AFT26P100-4WSR3 has a junction-to-case thermal resistance (R_θJC) of 0.60 °C/W, measured at 77 °C case temperature, 22 W CW, 28 Vdc, and 2590 MHz. Freescale recommends soldering the device directly to a copper heatsink with thermal via array beneath the exposed pad. AN1955 details measurement methodology, and MTTF calculators are available on nxp.com/rf to model lifetime under specific thermal profiles.