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NXP Semiconductors AFT27S006N-1000M
- Part No.:
- AFT27S006N-1000M
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- -
- Datasheet:
-
AFT27S006N-1000M.pdf
- Description:
- RF MOSFET
- Quantity:
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Inventory:9,470
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Product details
Overview
AFT27S006N-1000M from NXP Semiconductors is an N-channel enhancement-mode RF power LDMOS transistor designed for cellular base station amplifiers operating from 728 to 3700 MHz. It delivers 28.8 dBm average output power under W-CDMA modulation at 28 Vdc drain supply, with typical power gain of 22.2–24.4 dB and drain efficiency up to 22.4% across band edges. Its primary circuit role is final-stage RF power amplification in macrocell and small-cell infrastructure.
For engineers reviewing the AFT27S006N-1000M datasheet, AFT27S006N-1000M pinout, AFT27S006N-1000M application, or AFT27S006N-1000M equivalent, key selection criteria include broadband gain flatness (±0.053 dB over 60 MHz), ACPR performance (–46.2 dBc at 3500 MHz), thermal resistance (3.4 °C/W), gate voltage range (–6.0 to +10 Vdc), and compatibility with digital predistortion (DPD) correction systems.
Technical Context
This device employs lateral DMOS architecture optimized for high linearity and efficiency in wideband multi-carrier signals. It operates in Class AB bias with quiescent drain current of 65–70 mA and supports single-carrier W-CDMA with 9.9 dB PAR at 0.01% CCDF probability. The transistor integrates a thermally enhanced PLD-1.5W plastic package with source-connected center thermal pad for direct heatsink mounting.
Its functional test conditions specify 50 Ω system impedance, 2170 MHz center frequency, and 3.84 MHz channel bandwidth. Load-pull data confirm tunable operation for both maximum P1dB (up to 9 W) and peak drain efficiency (69.8%) across 2110–2690 MHz, enabling flexible PA design trade-offs between output power, efficiency, and linearity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 728–3700 MHz - Covers LTE Bands 12/13/17/28 (700 MHz), Band 1/4/25 (2100 MHz), Band 7/38/41 (2600 MHz), and n77/n78 (3400–3800 MHz) |
| Output Power (Pout) | 28.8 dBm avg. - Equivalent to 750 mW average RF output, suitable for low-to-mid-power macrocell and distributed antenna system (DAS) boosters |
| Power Gain (Gps) | 22.2 dB typ. @ 2140 MHz - Enables compact two-stage PA designs without intermediate gain stages |
| Drain Efficiency (ηD) | 20.2% typ. @ 2170 MHz - Reduces thermal load and DC power consumption in continuous-wave and modulated operation |
| ACPR | –46.2 dBc @ 3500 MHz - Meets stringent 3GPP ACLR requirements for 20 MHz LTE channels |
| Input Return Loss (IRL) | –17 dB min. @ 2140 MHz - Simplifies input matching network design and improves stability margin |
| Thermal Resistance (RθJC) | 3.4 °C/W - Requires heatsink interface with ≤0.5 °C/W total thermal resistance to maintain junction <150 °C at full load |
Pinout & Package
Package: PLD-1.5W plastic overmolded package with exposed copper thermal pad on underside. Dimensions: 7.11 × 4.91 mm (280 × 193 mil). Center pad is electrically connected to source terminal and must be soldered to PCB thermal plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| RFout / VDS | Drain terminal | High-voltage RF output node; connects to output matching network and collector-side decoupling capacitors |
| RFin / VGS | Gate terminal | RF input node; requires DC blocking and gate bias feed network; sensitive to ESD (Class 1B HBM) |
| Source (center pad) | Source terminal | Common reference for gate and drain; primary thermal path to PCB; must be soldered with ≥6 thermal vias to internal ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Wideband 728–3700 MHz operation | Eliminates need for multiple discrete PAs across sub-6 GHz 5G NR and LTE bands |
| Digital predistortion (DPD) support | Optimized AM/PM characteristics (–10.2° max) enable effective linearization in closed-loop DPD systems |
| Enhanced negative VGS range (–6.0 V) | Enables stable Class C operation for higher efficiency in burst-mode TDD applications |
| Robust load mismatch tolerance | Withstands 5:1 VSWR at 32 Vdc and 8.1 W CW without degradation - critical for antenna coupling variations |
| Moisture sensitivity level 3 | Requires reflow within 168 hours after dry pack opening; compatible with standard SMT assembly processes |
Applications
| Macrocell Base Station Transceiver | Small-Cell Remote Radio Head (RRH) |
|---|---|
Use Scenario: Final-stage power amplifier in 4T4R MIMO macro base station operating in Band 7 (2500–2690 MHz). IC Role / Device Role / Timing Role: RF power transistor delivering 28.8 dBm avg. output per chain with ACPR < –42.5 dBc under 20 MHz LTE signal. Use Value: Enables 2×2 MIMO configuration with <1.5 dB gain variation across temperature (–30°C to +85°C) and reduces thermal derating in outdoor cabinets. | Use Scenario: Compact 2×2 MIMO RRH deployed on streetlight poles covering urban 3.5 GHz 5G coverage. IC Role / Device Role / Timing Role: Single-ended PA stage driving 3400–3600 MHz n77/n78 5G NR signals with 9.1 dB PAR. Use Value: Delivers 16.1–17.9 dB gain and 14.3–16.7% efficiency at 3.5 GHz while maintaining –44.1 to –46.2 dBc ACPR - meeting 3GPP TS 38.104 spectral mask. |
| Indoor Distributed Antenna System (DAS) | Private LTE/5G Network Booster |
Use Scenario: Bi-directional repeater unit amplifying uplink/downlink in enterprise office buildings using Band 13 (777–787 MHz). IC Role / Device Role / Timing Role: Linear PA operating at 728–768 MHz with 24.2–24.4 dB gain and –45.6 to –46.2 dBc ACPR. Use Value: Supports 10+ simultaneous VoLTE calls with <0.053 dB gain flatness over 60 MHz bandwidth - minimizing intermodulation distortion in dense signal environments. | Use Scenario: Fixed wireless access (FWA) customer premises equipment (CPE) for private 5G networks in industrial plants. IC Role / Device Role / Timing Role: Final-stage PA in 2600 MHz Band 7 FWA transmitter handling 100 MHz NR carriers with 9.5 dB PAR. Use Value: Achieves 22.0 dB gain and 21.2% efficiency at 2600 MHz while supporting 5G NR FR1 waveform compliance - reducing bill-of-materials count versus GaN alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF6V2300NB | Higher P1dB (30 W), narrower bandwidth (1805–2200 MHz), GaN-on-SiC process | Better suited for high-power macrocell applications above 20 W; not suitable for sub-1 GHz or >2.7 GHz bands | Select when >25 W saturated output is required and frequency coverage is limited to PCS/IMT bands |
| CGHV1F025D | GaN HEMT, 25 W P1dB, 2.3–2.8 GHz only, higher gain (19 dB), higher VDD (48 V) | Targeted for 2.6 GHz TDD-LTE and 5G NR; lacks 700 MHz and 3.5 GHz support | Choose for new 2.6 GHz-only deployments requiring higher efficiency (>55%) and ruggedness against load mismatch |
Compared with MRF6V2300NB and CGHV1F025D, the AFT27S006N-1000M offers broader frequency coverage (728–3700 MHz) and lower gate drive complexity (28 V vs. 48 V), making it optimal for multi-band, software-defined radio (SDR)-based infrastructure where flexibility and thermal manageability outweigh peak power needs.
Availability
AFT27S006N-1000M is available at Aetrix Electronics and suitable for cellular infrastructure, private 5G networks, and distributed antenna systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp-up.
Supply support for AFT27S006N-1000M includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.
The AIRFAST RF Power portfolio - including the AFT27S006N-1000M - is engineered specifically for energy-efficient, broadband, and thermally robust RF power amplification in 4G LTE and 5G NR cellular infrastructure equipment.
FAQ
What is the maximum operating frequency of the AFT27S006N-1000M?
The AFT27S006N-1000M is characterized and specified for operation from 728 MHz to 3700 MHz, covering all major 4G LTE and 5G NR sub-6 GHz bands including Band 12/13/17/28 (700 MHz), Band 1/4/25 (2100 MHz), Band 7/38/41 (2600 MHz), and n77/n78 (3400–3800 MHz). Performance data is validated up to 3700 MHz per Rev. 5 (Dec. 2017) datasheet.
Does the AFT27S006N-1000M support digital predistortion (DPD)?
Yes, the AFT27S006N-1000M is explicitly designed for digital predistortion error correction systems. Its AM/PM characteristic is measured at –10.2° maximum across the 2110–2170 MHz band, and its broadband linearity (ACPR down to –46.2 dBc) enables effective closed-loop DPD implementation in modern cellular base stations.
What is the thermal resistance and recommended heatsinking for the AFT27S006N-1000M?
The AFT27S006N-1000M has a junction-to-case thermal resistance (RθJC) of 3.4 °C/W. To maintain safe junction temperature (<150 °C) at full 28.8 dBm average output, the PCB must provide ≤0.5 °C/W total thermal resistance from case to ambient via ≥6 thermal vias under the center source pad, connected to a solid internal ground plane and external heatsink.
What are the gate voltage limits and biasing requirements for the AFT27S006N-1000M?
The AFT27S006N-1000M specifies gate-source voltage limits of –6.0 V to +10 Vdc, with typical quiescent gate voltage (VGS(Q)) of 1.5–2.3 Vdc at IDQ = 70 mA and VDD = 28 Vdc. Gate bias must be stabilized with low-noise, low-drift circuitry due to its 0.8–1.6 Vdc threshold voltage (VGS(th)), and ESD protection (Class 1B HBM) mandates proper handling during assembly.
Is the AFT27S006N-1000M pin-compatible with other AIRFAST devices like AFT27S004N or AFT27S008N?
No, the AFT27S006N-1000M is not pin-compatible with AFT27S004N or AFT27S008N. While all three share the PLD-1.5W package outline, their internal die configurations, gate/drain terminal placements, and thermal pad routing differ. Layout reuse requires verification against each device's respective PCB pad layout drawing (e.g., Figure 39 for AFT27S006N-1000M).
AFT27S006N-1000M Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
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- Packaging:
- Bulk
- Product Status:
- Active
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AFT27S006N-1000M FAQ
1.How can I place an order for AFT27S006N-1000M through Aetrix?
Please submit a Request for Quotation (RFQ) for AFT27S006N-1000M on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFT27S006N-1000M reliable?
The price and inventory of AFT27S006N-1000M are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFT27S006N-1000M is usually 5 days.
3.What payment methods are accepted for AFT27S006N-1000M?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFT27S006N-1000M transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFT27S006N-1000M?
AFT27S006N-1000M orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFT27S006N-1000M order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFT27S006N-1000M?
For technical support, including AFT27S006N-1000M datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFT27S006N-1000M requirements.
6.How does Aetrix verify that AFT27S006N-1000M is sourced from the original manufacturer or authorized distributors?
All AFT27S006N-1000M products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFT27S006N-1000M meets industry standards.
7.What is the process for return or replacement of AFT27S006N-1000M?
All AFT27S006N-1000M units undergo pre-shipment inspection (PSI). If there is an issue with AFT27S006N-1000M, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFT27S006N-1000M part is unused and in its original packaging.
Return procedure for AFT27S006N-1000M:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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