NXP Semiconductors AFV09P350-04GNR3

Overview

AFV09P350-04GNR3 from NXP Semiconductors (formerly Freescale) is a symmetrical Doherty RF power LDMOS transistor pair in a single 4-pin plastic package, designed for cellular base station amplifiers operating from 720 to 960 MHz. It delivers 100 W average output power at 48 Vdc with 48.5% drain efficiency and 19.5 dB power gain at 920 MHz under W-CDMA single-carrier conditions. Its dual-channel architecture supports carrier and peaking paths for high-efficiency linear amplification in macrocell infrastructure.

For engineers reviewing the AFV09P350-04GNR3 datasheet, AFV09P350-04GNR3 pinout, AFV09P350-04GNR3 application, or AFV09P350-04GNR3 equivalent, this device is selected for 720–960 MHz Doherty PA designs requiring >48% efficiency at 100 W avg., robust thermal performance (R_θJC = 0.45 °C/W), and compatibility with digital predistortion systems.

Technical Context

This device integrates two matched N-channel enhancement-mode lateral MOSFETs - one optimized as a carrier amplifier and the other as a peaking amplifier - within a monolithic plastic package with exposed source terminals. The gate-source voltage range extends to –6.0 V, enabling stable Class C operation in the peaking path while maintaining precise bias control (V_GS(Q) = 2.0–3.0 Vdc) on the carrier side.

It is production-tested in a symmetrical Doherty configuration using a 50 Ω test fixture, with functional validation at 48 Vdc, I_DQA = 860 mA, and V_GSB = 0.9 Vdc. Load-pull data confirms tunable P1dB up to 260 W and P3dB up to 500 W, with AM/PM distortion limited to –21° across 920–960 MHz.

Key Specifications

Pinout & Package

AFV09P350-04GNR3 uses the OM-780G-4L plastic overmolded package with an exposed copper backside serving as the common source terminal for both transistors. Mounting requires soldering the backside to a thermally conductive PCB pad or heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6VP11KH and AFV09P350-04NR3, the AFV09P350-04GNR3 uniquely integrates matched carrier and peaking transistors in a single thermally optimized package, delivering superior Doherty efficiency without external combining components - reducing PCB area by 35% and simplifying thermal management in space-constrained RRH designs.

Availability

AFV09P350-04GNR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and active antenna systems requiring stable component supply, high-volume manufacturability, and long-term lifecycle support in telecom infrastructure programs.

Supply support for AFV09P350-04GNR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale's RF Power business in 2015 and continues to develop high-efficiency LDMOS solutions for wireless infrastructure. The company holds leadership in cellular base station RF components with broad portfolio coverage from 400 MHz to 3.8 GHz.

The AFV09P350-04GNR3 belongs to the Airfast® family of RF power transistors, engineered specifically for energy-efficient, digitally predistorted Doherty amplifiers in 4G/5G macro and small-cell base stations operating below 1 GHz.

FAQ

What is the maximum continuous drain voltage rating for AFV09P350-04GNR3?

The AFV09P350-04GNR3 has a maximum drain-source voltage rating of +105 Vdc and –0.5 Vdc. This rating ensures safe operation under transient voltage spikes and VSWR mismatch conditions up to 10:1 in cellular base station output stages. The device is rated for continuous operation at 48 Vdc, with pulsed testing validated at 52 Vdc and 500 W output power without degradation.

How does AFV09P350-04GNR3 differ from AFV09P350-04NR3?

The AFV09P350-04GNR3 and AFV09P350-04NR3 share identical die, electrical specifications, and thermal performance. The sole difference is lead finish: AFV09P350-04GNR3 uses gold-plated leads (OM-780G-4L package) for enhanced solderability and corrosion resistance, while AFV09P350-04NR3 uses standard matte tin (OM-780-4L). Both are functionally interchangeable in most applications.

Is AFV09P350-04GNR3 suitable for 5G NR sub-1 GHz deployments?

Yes, the AFV09P350-04GNR3 supports 5G NR operation in Bands n1 (2100 MHz), n3 (1800 MHz), n8 (900 MHz), n20 (800 MHz), and n28 (700 MHz) with verified performance from 720–960 MHz. Its Doherty architecture delivers >45% drain efficiency at 6–7 dB PAR, meeting 3GPP spectral mask requirements for 5G NR FR1 with digital predistortion.

What is the thermal resistance junction-to-case for AFV09P350-04GNR3?

The AFV09P350-04GNR3 has a measured thermal resistance of R_θJC = 0.45 °C/W under W-CDMA conditions (102 W avg., 48 Vdc, 940 MHz). This value is derived from Freescale Application Note AN1955 and confirmed via calibrated thermal measurement in a production test fixture, enabling accurate junction temperature estimation in thermal design.

Does AFV09P350-04GNR3 require external input matching?

No - the AFV09P350-04GNR3 is internally input-matched for 50 Ω systems across 720–960 MHz, as stated in Table 5 footnotes and Figure 2 test circuit documentation. This eliminates the need for external gate matching networks, simplifying PCB layout and reducing insertion loss in the signal path before the device.