NXP Semiconductors AFV09P350-04NR3

Overview

AFV09P350-04NR3 from NXP Semiconductors (formerly Freescale) is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station amplifiers operating from 720 to 960 MHz. It delivers 100 W average output power at 48 Vdc, achieves 19.5 dB power gain and 48.5% drain efficiency at 920 MHz under W-CDMA single-carrier conditions, and supports digital predistortion for linearization in macrocell infrastructure.

For engineers reviewing the AFV09P350-04NR3 datasheet, AFV09P350-04NR3 pinout, AFV09P350-04NR3 application, or AFV09P350-04NR3 equivalent, this page provides verified electrical specifications, thermal resistance (0.45 °C/W), symmetrical Doherty configuration validation, gate-source voltage range (–6.0 to +10 Vdc), and real-world W-CDMA performance metrics including ACPR (–29.2 dBc) and PAR (7.2 dB) at 920 MHz.

Technical Context

This dual-gate LDMOS device integrates carrier and peaking transistors in a single 4-lead plastic package (OM-780-4L), with exposed backside serving as common source terminal. Its symmetrical Doherty architecture enables high efficiency across 720–960 MHz while maintaining linearity under 9.9 dB PAR input signals.

The device is production-tested in functional Doherty fixtures using 50 Ω systems, with internal input matching and validated load-pull contours for both P1dB and P3dB tuning. Key design enablers include extended negative V_GS range (–6.0 Vdc) for Class C peaking operation and ESD robustness per JESD22-A114 Class 1C.

Key Specifications

Pinout & Package

AFV09P350-04NR3 uses the OM-780-4L plastic overmolded package with exposed copper backside (common source terminal). Dimensions conform to standard RF power transistor footprints for surface-mount assembly and thermal interface to heatsinks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with AFV09P350-04GNR3, the AFV09P350-04NR3 offers identical RF performance but lacks halogen-free certification; compared with MRF6VP21K25HR5, it provides optimized 720–960 MHz efficiency and integrated Doherty functionality at lower voltage and cost, making it superior for macrocell infrastructure where band and architecture alignment are critical.

Availability

AFV09P350-04NR3 is available at Aetrix Electronics and suitable for macrocell base stations, remote radio heads, and W-CDMA infrastructure equipment requiring stable component supply, long-lifecycle support, and traceable sourcing for telecom OEMs.

Supply support for AFV09P350-04NR3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors acquired Freescale in 2015 and continues its RF Power portfolio, specializing in high-efficiency LDMOS and GaN transistors for wireless infrastructure.

The AFV09P350-04NR3 belongs to the Airfast family, engineered specifically for energy-efficient, digitally linearized Doherty amplifiers in 4G/LTE macrocell base stations operating below 1 GHz.

FAQ

What is the maximum continuous drain current rating for AFV09P350-04NR3?

The AFV09P350-04NR3 does not specify a maximum continuous drain current (I_D) rating in its datasheet. Instead, it defines safe operating limits via V_DSS (–0.5 to +105 Vdc), V_GS (–6.0 to +10 Vdc), and case temperature (–40 to +150 °C). Operational current is determined by bias point: typical quiescent drain current is 860 mA per side (IDQA/IDQB) at 48 Vdc, with pulsed testing up to 301 W P1dB output.

Does AFV09P350-04NR3 require external input matching networks?

No, the AFV09P350-04NR3 is internally input-matched for 50 Ω systems across 720–960 MHz, as confirmed in Table 5 notes and Figure 2 test circuit documentation. External matching is only needed at the output (drain) side to achieve optimal P1dB, P3dB, or efficiency per load-pull data in Tables 7–10.

What is the gate threshold voltage range for AFV09P350-04NR3?

The gate threshold voltage (V_GS(th)) for AFV09P350-04NR3 is specified as 1.3–2.3 Vdc (min–max) at V_DS = 10 Vdc and I_D = 460 µAdc, per Table 5. This range ensures consistent turn-on behavior across process variation and supports stable Class AB carrier biasing.

Can AFV09P350-04NR3 operate at 65 V drain supply voltage?

No. The absolute maximum V_DD rating is +55 Vdc (Table 1). Operation at 65 Vdc exceeds specification and risks catastrophic failure. The device is characterized and optimized for 48 Vdc operation, with all published performance data (gain, efficiency, ACPR) referenced to that condition.

Is AFV09P350-04NR3 pin-compatible with AFV09P350-04GNR3?

Yes. AFV09P350-04NR3 and AFV09P350-04GNR3 share identical pinout, package (OM-780-4L), electrical characteristics, and thermal performance. The only difference is the halogen-free molding compound in the GNR3 variant, making them mechanically and electrically interchangeable in existing designs.