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NXP Semiconductors AFV10700GSR5
- Part No.:
- AFV10700GSR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780GS-4L
- Datasheet:
-
AFV10700GSR5.pdf
- Description:
- RF MOSFET LDMOS 50V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:6,984
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Product details
Overview
AFV10700GSR5 from NXP Semiconductors is a 960–1215 MHz RF power LDMOS transistor designed for high-peak-pulse radar applications including IFF, secondary surveillance radar, ADS-B transponders, and DME. It delivers 700 W peak output power at 1090 MHz under 50 V, 128 µs pulse width, and 10% duty cycle, with 19.2 dB power gain and 56.1% drain efficiency. Its NI-780GS-4L package supports rugged >20:1 VSWR operation in pulsed systems.
For engineers reviewing the AFV10700GSR5 datasheet, AFV10700GSR5 pinout, AFV10700GSR5 application, or AFV10700GSR5 equivalent, this page provides verified technical context, validated pin functions, confirmed pulse performance metrics across 960–1215 MHz, thermal impedance (0.030 °C/W), ESD protection class (HBM Class 2, CDM Class C3), and real-world reference circuit impedances (e.g., Zsource = 4.0 – j6.9 Ω at 1030 MHz).
Technical Context
This dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET operates in Class C or pulsed AB mode with internally matched input and output networks optimized for broadband 960–1215 MHz pulse amplification. It supports single-ended, push-pull, or quadrature configurations and features integrated ESD protection enabling gate voltage pulsing down to –6 VGS.
The device sustains 55 VDD maximum operating voltage and exhibits robust thermal performance: junction-to-case thermal impedance of 0.030 °C/W under 730 W peak pulse conditions (128 µs, 10% duty, 50 V, TC = 75 °C). Its ruggedness is validated at >20:1 VSWR across all phase angles at 1030 MHz with no degradation under 3 dB overdrive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 960–1215 MHz - Validated for pulse radar bands including IFF (1030/1090 MHz) and DME (960–1215 MHz). |
| Peak Output Power | 700 W at 1090 MHz - Measured in 1030–1090 MHz reference circuit, enabling high-fidelity pulse chain transmission. |
| Power Gain | 19.2 dB at 1030 MHz - Confirmed in narrowband production test fixture, supporting stable small-signal drive requirements. |
| Drain Efficiency | 58.5% at 1030 MHz - Achieved under 730 W peak, 128 µs, 10% duty cycle, reducing thermal load in air-cooled systems. |
| Thermal Impedance | 0.030 °C/W - Junction-to-case value measured at TC = 75 °C, critical for heatsink sizing in pulsed radar PA stages. |
| VSWR Ruggedness | >20:1 at 1030 MHz - Validated with 3 dB overdrive (17.2 W peak input), eliminating need for external circulators in mismatched antenna loads. |
| ESD Protection | HBM Class 2 (2000 V), CDM Class C3 (2000 V) - Enables reliable handling and assembly without gate damage during manufacturing. |
Pinout & Package
The AFV10700GSR5 is housed in the NI-780GS-4L air-cavity ceramic package (19.05 mm × 25.4 mm × 4.57 mm), with electrically isolated source terminal connected to the metal backside of the package. Thermal path is optimized via direct die attach to the baseplate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate A | Control electrode for transistor A | Accepts negative gate bias (–6 V max) and RF drive; internally matched for 50 Ω system interface. |
| 2: Gate B | Control electrode for transistor B | Independent gate control enables balanced push-pull or quadrature operation; same bias and drive specs as Gate A. |
| 3: Drain A | High-power RF output node for transistor A | Carries peak current up to 28.4 A; connects to output matching network; backside source serves as common return path. |
| 4: Drain B | High-power RF output node for transistor B | Parallel or phased output path; shares source reference with Drain A; supports differential or combined output architectures. |
Key Features
| Feature | Design Value |
|---|---|
| Internally matched broadband I/O | Eliminates external matching components in 960–1215 MHz pulse applications, reducing PCB area and tuning complexity. |
| Configurable topology support | Validated for single-ended, push-pull, and quadrature use-enabling flexible PA architecture selection without redesign. |
| 55 VDD maximum rating | Allows headroom for transient voltage spikes in radar modulators and compatibility with standard 50 V pulse power supplies. |
| Integrated ESD protection | Enables safe gate voltage pulsing down to –6 VGS, supporting precise Class C bias control without external clamp diodes. |
| NXP product longevity program | Guaranteed 15-year supply continuity post-launch, mitigating obsolescence risk for long-lifecycle defense and avionics programs. |
Applications
| IFF Transponder Amplifier | Secondary Surveillance Radar (SSR) PA |
|---|---|
|
Use Scenario: Transmitting coded reply pulses at 1030 MHz (interrogation) and 1090 MHz (reply) in military/civilian air traffic control systems. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 700–800 W peak pulses with <128 µs width and 10% duty cycle. Use Value: High gain (19.2 dB) and efficiency (56.1%) reduce driver stage complexity and thermal management burden in airborne transponders. |
Use Scenario: Generating high-fidelity, long-pulse interrogation bursts in ground-based SSR systems operating across 1030–1090 MHz band. IC Role / Device Role / Timing Role: Pulsed RF power transistor operating in Class C with precise gate pulsing for duty-cycle control. Use Value: >20:1 VSWR ruggedness ensures uninterrupted operation despite antenna VSWR variations during rotating radar sweeps. |
| ADS-B Transponder PA | DME Ground Station Amplifier |
|
Use Scenario: Amplifying 1090 MHz extended squitter (ES) messages in certified aircraft transponders requiring DO-260B compliance. IC Role / Device Role / Timing Role: High-reliability pulse amplifier delivering 700 W peak with stable gain flatness across 1030–1090 MHz. Use Value: 0.030 °C/W thermal impedance enables compact heatsink design while maintaining TJ ≤ 225 °C under sustained pulse loads. |
Use Scenario: Transmitting precision distance-measuring pulses at 960–1215 MHz in aviation navigation ground stations. IC Role / Device Role / Timing Role: Dual-drain LDMOS configured in push-pull to enhance linearity and harmonic suppression in wideband DME waveforms. Use Value: Internally matched I/O simplifies broadband matching across full 960–1215 MHz band, reducing calibration time and component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFV10700HSR5 | Same die, NI-780S-4L package (32 mm tape width); identical electrical specs but different mechanical footprint and reel packaging. | Designed for automated SMT placement on smaller-footprint PCBs where NI-780GS-4L's wider tape is incompatible. | Select AFV10700HSR5 only when board space or pick-and-place tooling requires the S-variant package. |
| AFV10700HR5 | Same die, NI-780H-4L package (56 mm tape width); matches AFV10700GSR5 electrically but differs in tape/reel configuration and thermal pad layout. | Targeted at legacy production lines using H-variant tape handling; thermal performance identical but mounting hole pattern differs. | Choose AFV10700HR5 only if existing assembly infrastructure is calibrated for H-variant reels and mechanical mounting. |
Compared with AFV10700GSR5, AFV10700HSR5 offers identical RF performance in a narrower tape format for space-constrained SMT lines, while AFV10700HR5 provides the same electrical behavior with legacy-compatible reel and mounting geometry-neither is pin-compatible due to distinct package outlines (NI-780GS-4L vs. NI-780S-4L vs. NI-780H-4L), requiring PCB redesign for substitution.
Availability
AFV10700GSR5 is available at Aetrix Electronics and suitable for defense radar transmitters, commercial ADS-B transponders, and avionics DME ground stations requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for DO-160/DO-254-compliant designs.
Supply support for AFV10700GSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology.
The AFV10700GSR5 belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for high-reliability, high-peak-power pulse radar applications demanding ruggedness, efficiency, and 15-year supply assurance.
FAQ
What is the maximum operating voltage for AFV10700GSR5?
The AFV10700GSR5 has a maximum operating voltage (VDD) rating of +55 Vdc, with absolute maximum drain-source voltage (VDSS) rated from –0.5 V to +105 Vdc. This allows safe operation under transient overvoltage conditions typical in radar modulator circuits while maintaining reliability at nominal 50 Vdc bias.
Does AFV10700GSR5 require external input/output matching networks?
No, the AFV10700GSR5 is internally input and output matched for broadband 960–1215 MHz operation. NXP's reference circuits confirm functional performance without external matching components, though system-level tuning may be needed for specific VSWR or harmonic suppression targets.
What is the thermal impedance of AFV10700GSR5 and how is it measured?
The AFV10700GSR5 has a junction-to-case thermal impedance (ZθJC) of 0.030 °C/W, measured under pulsed conditions: 730 W peak, 128 µs pulse width, 10% duty cycle, 50 Vdc, TC = 75 °C. This value is critical for heatsink thermal resistance calculation in pulsed radar amplifier designs.
Is AFV10700GSR5 qualified for aerospace or defense applications?
Yes, the AFV10700GSR5 is widely deployed in defense and civil aviation systems including IFF, SSR, and DME. It meets stringent reliability requirements with 15-year product longevity assurance, HBM Class 2 and CDM Class C3 ESD ratings, and junction temperature range up to +225 °C.
What gate drive configuration does AFV10700GSR5 support?
The AFV10700GSR5 supports independent gate drive for Gate A and Gate B, enabling single-ended, push-pull, or quadrature configurations. Its gate threshold voltage (VGS(th)) is 1.3–2.3 Vdc, and quiescent gate voltage (VGS(Q)) ranges from 1.6–2.6 Vdc at IDQ(A+B) = 100 mA, allowing precise Class C bias control.
AFV10700GSR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780GS-4L
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- Dual
- Frequency:
- 1.03GHz ~ 1.09GHz
- Gain:
- 19.2dB
- Voltage - Test:
- 50 V
- Current Rating (Amps):
- 10µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 700W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780GS-4L
AFV10700GSR5 FAQ
1.How can I place an order for AFV10700GSR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFV10700GSR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFV10700GSR5 reliable?
The price and inventory of AFV10700GSR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFV10700GSR5 is usually 5 days.
3.What payment methods are accepted for AFV10700GSR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFV10700GSR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFV10700GSR5?
AFV10700GSR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFV10700GSR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFV10700GSR5?
For technical support, including AFV10700GSR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFV10700GSR5 requirements.
6.How does Aetrix verify that AFV10700GSR5 is sourced from the original manufacturer or authorized distributors?
All AFV10700GSR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFV10700GSR5 meets industry standards.
7.What is the process for return or replacement of AFV10700GSR5?
All AFV10700GSR5 units undergo pre-shipment inspection (PSI). If there is an issue with AFV10700GSR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFV10700GSR5 part is unused and in its original packaging.
Return procedure for AFV10700GSR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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