NXP Semiconductors AFV10700H-1090

Overview

AFV10700H from NXP Semiconductors is a 960–1215 MHz RF power LDMOS transistor designed for high-peak-pulse radar applications, delivering 700 W peak output at 1090 MHz with 19.0 dB power gain and 56.1% drain efficiency under 50 V, 128 µs pulse width, 10% duty cycle conditions. It operates as a dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET in pulsed Class C amplifier stages for IFF and secondary surveillance radar transmitters.

For engineers reviewing the AFV10700H datasheet, AFV10700H pinout, AFV10700H application, or AFV10700H equivalent, this device requires attention to gate quiescent voltage (1.6–2.6 V), ruggedness under >20:1 VSWR mismatch, thermal impedance (0.030 °C/W), maximum junction temperature (225 °C), and NI-780H-4L package mounting requirements.

Technical Context

The AFV10700H integrates two matched LDMOS cells in a single NI-780H-4L air-cavity package, supporting single-ended, push-pull, or quadrature configurations. Its internally matched broadband input and output networks simplify integration into 960–1215 MHz pulse amplifiers without external matching components across the band.

It features ESD protection rated to HBM Class 2 (2000 V) and CDM Class C3 (2000 V), a gate-source voltage range of –6.0 to +10 V, and operation up to 55 V_DD. The device maintains stable performance over case temperatures from –55 °C to +150 °C and junction temperatures up to +225 °C.

Key Specifications

Pinout & Package

The AFV10700H is housed in an NI-780H-4L air-cavity ceramic/metal flanged package with electrically isolated source (backside), requiring hard-solder attachment to a copper baseplate for optimal thermal and RF grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with AFV10700H, AFV10700HS offers reduced package size at the expense of thermal stability under high-repetition-rate pulsing, while AFV10700GS adds environmental resilience without altering RF performance - both share identical electrical characteristics and pinout but differ in mechanical construction and qualification scope.

Availability

AFV10700H is available at Aetrix Electronics and suitable for secondary surveillance radar, IFF transponders, ADS-B 1090ES transmitters, and DME ground station applications requiring stable component supply across multi-year defense and aviation production programs.

Supply support for AFV10700H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology.

The AFV10700H belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for high-reliability, high-peak-power pulse radar systems operating in the L-band (960–1215 MHz).

FAQ

What is the maximum safe operating voltage for AFV10700H?

The AFV10700H has an absolute maximum drain-source voltage (V_DSS) of +105 Vdc and a maximum operating voltage (V_DD) of +55 Vdc. Operation above 55 Vdc violates the device's safe operating area and risks catastrophic failure. NXP specifies 50 Vdc as the standard test condition for pulse performance, with 52 Vdc validated for higher peak output in the 1030–1090 MHz band. Always maintain V_DD ≤ 55 Vdc in production designs.

Does AFV10700H require external input/output matching networks?

No - the AFV10700H is internally input and output matched for broadband operation from 960 to 1215 MHz, as confirmed in NXP's reference circuit documentation and typical performance tables. External matching is unnecessary for fundamental-band operation; however, harmonic filtering remains essential. The internal matching eliminates discrete matching components in the 1030–1090 MHz reference circuit shown on page 5 of the datasheet.

What is the gate quiescent voltage range for AFV10700H at 100 mA total bias current?

The AFV10700H exhibits a gate quiescent voltage (V_GS(Q)) range of 1.6 V to 2.6 V when biased at IDQ(A+B) = 100 mAdc and V_DD = 50 Vdc, as specified in Table 4 of the datasheet. This range reflects unit-to-unit variation and must be set precisely during production calibration to ensure consistent Class C conduction angle and pulse fidelity in radar applications.

Can AFV10700H be used in push-pull configuration?

Yes - NXP explicitly qualifies the AFV10700H for push-pull, single-ended, and quadrature configurations, as stated in the Features section. Its dual-gate/dual-drain structure and symmetric internal layout enable balanced drive, with measured series-equivalent source impedance (4.0 – j6.9 Ω) and load impedance (3.9 – j1.4 Ω) at 1030 MHz confirming suitability for differential operation in narrowband test fixtures.

What thermal interface material is recommended for AFV10700H mounting?

NXP recommends solder reflow attachment using high-thermal-conductivity solder (e.g., AuSn or SnAgCu) directly to a copper baseplate, per Application Note AN1908. Thermal pastes or greases are not advised due to long-term reliability risks under high-power RF pulsing. The NI-780H-4L package's flange must achieve uniform, void-free solder joint coverage to realize the specified 0.030 °C/W junction-to-case thermal impedance.