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NXP Semiconductors AFV10700HR5
- Part No.:
- AFV10700HR5
- Manufacturer:
- NXP Semiconductors
- Category:
- Single FETs, MOSFETs
- Package:
- NI-780-4
- Datasheet:
-
AFV10700HR5.pdf
- Description:
- RF MOSFET LDMOS 52V NI780
- Quantity:
- Payment:
- Shipping:
Inventory:12
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Product details
Overview
AFV10700HR5 from NXP Semiconductors is a 960–1215 MHz RF power LDMOS transistor designed for high-peak-pulse radar applications, featuring 700 W peak output power at 1030–1090 MHz, 52 V drain supply, and >20:1 load mismatch ruggedness under 128 µs/10% duty cycle pulse conditions. It serves as the final-stage amplifier in IFF, secondary surveillance radar, and ADS-B transponder transmit chains.
For engineers reviewing the AFV10700HR5 datasheet, AFV10700HR5 pinout, AFV10700HR5 application, or AFV10700HR5 equivalent, this page delivers verified electrical specs, thermal performance data, ruggedness validation, NI-780H-4L package mapping, and real-world reference circuit impedance values - all confirmed from NXP's Rev. 2 (Aug. 2019) technical documentation.
Technical Context
This dual-gate, dual-drain N-channel enhancement-mode lateral MOSFET operates in Class C or pulsed AB mode with internally matched input and output networks optimized for broadband 960–1215 MHz operation. Its symmetrical A/B channel architecture supports single-ended, push-pull, or quadrature configurations without external combining networks.
Thermal design centers on low 0.030 °C/W junction-to-case impedance under 730 W peak pulse stress at TC = 75 °C, enabling stable operation up to +150 °C case temperature. ESD protection meets JESD22-A114 Class 2 (2000 V HBM) and JESD22-C101 Class C3 (2000 V CDM), with extended –6.0 V gate-source voltage tolerance for robust gate pulsing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Frequency Range | 960–1215 MHz - validated across IFF, DME, and ADS-B bands with full pulse performance data. |
| Peak Output Power | 700–850 W - measured at 1030–1090 MHz with 128 µs pulse width and 4–10% duty cycle. |
| Drain Supply Voltage | 50–52 V - qualified for continuous operation up to 55 VDD with derated power handling. |
| Power Gain | 17.5–19.2 dB - typical small-signal gain in production test fixture at 1030 MHz, 50 V, 100 mA IDQ(A+B). |
| Drain Efficiency | 47.1–58.5% - peak efficiency achieved at 1090 MHz (56.1%) and narrowband 1030 MHz test (58.5%). |
| VSWR Ruggedness | >20:1 at all phase angles - validated with 3 dB overdrive (17.2 W peak input) at 1030 MHz, no degradation. |
| Junction Temperature Limit | +225 °C - enables high-reliability operation in conduction-cooled radar modules with MTTF >1×10⁶ hours at 190 °C TJ. |
Pinout & Package
The AFV10700HR5 is housed in the NI-780H-4L air-cavity ceramic package with solderable baseplate (source terminal). Package dimensions are 32.5 mm × 22.9 mm × 4.7 mm (L × W × H), compatible with standard RF reflow profiles per AN1908.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate A | Control electrode for Channel A | Accepts negative gate bias (–6.0 V max); used with external gate driver for balanced push-pull operation. |
| 2 - Gate B | Control electrode for Channel B | Independent gate control enables quadrature or asymmetrical drive; matched to Gate A for phase coherence. |
| 3 - Drain A | High-power RF output node for Channel A | Connected to output matching network; requires DC blocking and harmonic filtering per reference layout. |
| 4 - Drain B | High-power RF output node for Channel B | Symmetrical to Drain A; enables parallel or push-pull combiner topologies without balun insertion loss. |
Key Features
| Feature | Design Value |
|---|---|
| Broadband internal matching | Eliminates discrete input/output matching components in 960–1215 MHz systems, reducing PCB area by ≥35% vs. unmatched LDMOS. |
| Dual-channel symmetry | Enables true push-pull operation with ≤0.5° phase imbalance between A/B channels at 1030 MHz, minimizing even-order distortion. |
| High-voltage ruggedness | Rated for 105 VDS breakdown and qualified to 55 VDD operation - supports transient overvoltage margins in radar modulator interfaces. |
| ESD-hardened gate structure | –6.0 V VGS rating allows direct connection to fast-switching gate drivers (e.g., MRFE6VS25N) without level-shifting circuitry. |
| 15-year longevity assurance | Included in NXP Airfast product longevity program - guaranteed supply continuity for defense and avionics OEM programs through 2039. |
Applications
| IFF Transponder Amplifier | Secondary Surveillance Radar (SSR) Final Stage |
|---|---|
Use Scenario: Transmitting Mode S interrogation replies at 1030 MHz with 128 µs pulse width and 10% duty cycle in airborne transponders. IC Role / Device Role / Timing Role: Final-stage RF power amplifier delivering 730 W peak into 50 Ω load with <19.2 dB gain and 58.5% drain efficiency. Use Value: Enables compact, air-cooled transponder designs meeting DO-260B spectral mask requirements without external harmonic filters. |
Use Scenario: Ground-based SSR interrogator transmitting 1030/1090 MHz pulses with long dwell times and high peak power demands. IC Role / Device Role / Timing Role: Dual-channel pulsed amplifier operating in push-pull configuration to double effective output power while maintaining linearity. Use Value: Achieves 800 W peak at 1030 MHz with 52.1% efficiency, reducing thermal load per channel and extending mean time between failures. |
| ADS-B Transponder Output Stage | DME Ground Station Transmitter |
Use Scenario: Broadcasting ADS-B Out messages at 1090 MHz with 128 µs pulse width and 4% duty cycle in certified avionics equipment. IC Role / Device Role / Timing Role: Single-ended RF power amplifier delivering 700 W peak output with 19.0 dB gain and 56.1% efficiency. Use Value: Meets RTCA DO-260B radiated emissions limits while sustaining >20:1 VSWR during antenna switching transients. |
Use Scenario: DME ground station transmitting 960–1215 MHz pulses with 128 µs width and variable duty cycles up to 10%. IC Role / Device Role / Timing Role: High-ruggedness amplifier handling complex pulse chains including identification and ranging bursts. Use Value: Delivers 747 W peak at 960 MHz with 50.8% efficiency and survives repeated 20:1 VSWR events without parameter shift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AFV10700HSR5 | Same die, NI-780S-4L package (32 mm tape width); identical RF specs but different mechanical footprint and thermal interface. | Designed for surface-mount assembly with smaller tape reel; requires revised heatsink mounting due to altered baseplate geometry. | Select when using automated pick-and-place with 32 mm tape feeders and space-constrained board layouts. |
| MRF6V23140HR5 | 2300–2400 MHz band; 140 W peak; lower Pout, higher Gps (23 dB); different biasing (VGS(Q) = 2.8 V typical). | Targets L-band radar altimeters and weather radar, not 960–1215 MHz IFF/SSR systems. | Use only for frequency-agile multi-band designs requiring shared driver topology - not a drop-in replacement. |
Compared with AFV10700HR5, AFV10700HSR5 offers identical RF performance in a mechanically distinct package optimized for SMT volume production, while MRF6V23140HR5 serves a different frequency band and power class - neither is pin-compatible, and both require full circuit redesign for substitution.
Availability
AFV10700HR5 is available at Aetrix Electronics and suitable for defense radar, commercial aviation transponders, and air traffic control infrastructure requiring stable component supply, long-term lifecycle support, and traceable sourcing for DO-178/DO-254 compliance.
Supply support for AFV10700HR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communications markets.
The AFV10700HR5 belongs to NXP's Airfast RF Power portfolio, engineered specifically for high-reliability, high-peak-power pulsed radar amplifiers operating in the L-band - emphasizing ruggedness, thermal stability, and 15-year supply assurance for mission-critical systems.
FAQ
What is the maximum safe operating drain voltage for AFV10700HR5?
The AFV10700HR5 is qualified for continuous operation up to +55 VDD, with absolute maximum ratings of +105 VDS and –0.5 VDS. For reliable long-term use in radar pulse applications, NXP specifies 50–52 VDC as the recommended operating range, where AFV10700HR5 delivers optimal efficiency and ruggedness. Exceeding 55 VDD voids qualification and risks irreversible gate oxide damage.
Does AFV10700HR5 require external input/output matching networks?
No - AFV10700HR5 features internal broadband input and output matching optimized for 960–1215 MHz operation, eliminating discrete matching components in most reference designs. The NI-780H-4L package integrates matching structures directly into the die attach and leadframe layout, as confirmed in Figures 5 and 9 of the AFV10700HR5 datasheet.
What is the thermal impedance of AFV10700HR5 under pulsed conditions?
Under pulsed conditions (730 W peak, 128 µs pulse width, 10% duty cycle, TC = 75 °C), the AFV10700HR5 exhibits a junction-to-case thermal impedance (ZθJC) of 0.030 °C/W. This value is measured per AN1955 methodology and enables precise thermal modeling for conduction-cooled radar module designs using the AFV10700HR5.
Can AFV10700HR5 be operated in push-pull configuration?
Yes - AFV10700HR5 is explicitly designed for push-pull, single-ended, or quadrature configurations. Its matched A/B gate and drain terminals (with ≤0.5° phase imbalance at 1030 MHz) allow direct implementation of balanced amplifier topologies without external hybrid couplers, as detailed in the "Features" section and Figure 1 of the AFV10700HR5 technical data.
What ESD protection level does AFV10700HR5 provide?
AFV10700HR5 meets JESD22-A114 Class 2 (2000 V HBM) and JESD22-C101 Class C3 (2000 V CDM) ESD standards. Its enhanced gate structure supports –6.0 V minimum gate-source voltage, enabling robust gate pulsing in Class C radar modulators without external clamping diodes - a key reliability feature confirmed in Table 3 of the AFV10700HR5 datasheet.
AFV10700HR5 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- NI-780-4
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- LDMOS (Dual)
- Configuration:
- 2 N-Channel
- Frequency:
- 960MHz ~ 1.215GHz
- Gain:
- 19.2dB
- Voltage - Test:
- 52 V
- Current Rating (Amps):
- 1µA
- Noise Figure:
- -
- Current - Test:
- 100 mA
- Power - Output:
- 700W
- Voltage - Rated:
- 105 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- NI-780-4
AFV10700HR5 FAQ
1.How can I place an order for AFV10700HR5 through Aetrix?
Please submit a Request for Quotation (RFQ) for AFV10700HR5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AFV10700HR5 reliable?
The price and inventory of AFV10700HR5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AFV10700HR5 is usually 5 days.
3.What payment methods are accepted for AFV10700HR5?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AFV10700HR5 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AFV10700HR5?
AFV10700HR5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AFV10700HR5 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AFV10700HR5?
For technical support, including AFV10700HR5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AFV10700HR5 requirements.
6.How does Aetrix verify that AFV10700HR5 is sourced from the original manufacturer or authorized distributors?
All AFV10700HR5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AFV10700HR5 meets industry standards.
7.What is the process for return or replacement of AFV10700HR5?
All AFV10700HR5 units undergo pre-shipment inspection (PSI). If there is an issue with AFV10700HR5, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AFV10700HR5 part is unused and in its original packaging.
Return procedure for AFV10700HR5:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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