NXP Semiconductors AFV10700HSR5

Overview

AFV10700HSR5 from NXP Semiconductors is a 960–1215 MHz RF power LDMOS transistor designed for high-peak-pulse radar applications, delivering 700 W peak output at 1030 MHz with 19.2 dB power gain and 58.5% drain efficiency under 10% duty cycle, 128 µs pulse conditions at 50 V_DD. It serves as a dual-gate, dual-drain broadband amplifier in IFF, secondary surveillance radar, and ADS-B transponder transmit chains.

For engineers reviewing the AFV10700HSR5 datasheet, AFV10700HSR5 pinout, AFV10700HSR5 application, or AFV10700HSR5 equivalent, this page delivers verified electrical specs, ruggedness validation (>20:1 VSWR tolerance), thermal impedance (0.030 °C/W), gate threshold voltage (1.3–2.3 V), and ESD robustness (HBM Class 2, CDM Class C3) - all confirmed for the NI-780S-4L package.

Technical Context

This device is an N-channel enhancement-mode lateral MOSFET with internally matched input and output networks optimized for 960–1215 MHz pulse operation. Its dual-gate/dual-drain architecture supports single-ended, push-pull, or quadrature configurations, and it operates with quiescent drain current IDQ(A+B) = 100 mA at V_DD = 50 V.

It features integrated ESD protection enabling extended negative gate-source voltage swing for Class C pulsing, qualified up to 55 V_DD, and validated for >20:1 load VSWR across all phase angles at 1030 MHz without degradation under 3 dB overdrive.

Key Specifications

Pinout & Package

AFV10700HSR5 is housed in the NI-780S-4L air-cavity ceramic package (4-lead, flanged metal base). The backside of the package is the common source terminal; Drain A, Drain B, Gate A, and Gate B are top-side leads arranged in a symmetrical layout optimized for balanced RF routing and thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with AFV10700H and AFV10700GS, the AFV10700HSR5 offers optimized tape-and-reel logistics (32 mm width, 50-unit reels) for SMT lines with space-constrained feeders, while retaining identical RF performance, ruggedness, and thermal specs - making it the preferred choice for new high-volume radar module production.

Availability

AFV10700HSR5 is available at Aetrix Electronics and suitable for defense radar, commercial air traffic management, and avionics subsystems requiring stable component supply, long-lifecycle assurance, and high-reliability RF power amplification.

Supply support for AFV10700HSR5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and communications markets, with deep expertise in RF power technology.

The AFV10700HSR5 belongs to NXP's AIRFAST® RF Power LDMOS family, engineered specifically for high-peak, high-duty-cycle radar pulse amplification in defense and civil aviation systems operating from 960–1215 MHz.

FAQ

What is the maximum drain-source voltage rating for AFV10700HSR5?

The AFV10700HSR5 has a maximum drain-source voltage (V_DSS) rating of +105 Vdc and –0.5 Vdc, as specified in Table 1 of the official NXP datasheet (Rev. 2, Aug. 2019). This rating supports operation up to 55 V_DD with sufficient margin for transient spikes in radar pulse environments. The AFV10700HSR5 must never be biased beyond these absolute maximum limits to prevent irreversible device degradation.

Does AFV10700HSR5 require external input/output matching networks?

No, the AFV10700HSR5 is internally input and output matched for broadband operation from 960–1215 MHz, as confirmed in the "Features" section and validated in both reference and production test fixtures. While external matching may be used for fine-tuning in specific narrowband applications, the AFV10700HSR5 achieves 700 W peak output and 19.2 dB gain in the 1030 MHz narrowband test fixture without added matching components.

What is the thermal impedance of AFV10700HSR5, and how is it measured?

The AFV10700HSR5 has a junction-to-case thermal impedance (Z_θJC) of 0.030 °C/W, measured under pulsed conditions: case temperature 75 °C, 730 W peak output, 128 µs pulse width, 10% duty cycle, 50 V_DD, IDQ(A+B) = 100 mA at 1030 MHz (Table 2, NXP datasheet Rev. 2). This value reflects real-world thermal performance in radar PA modules and directly informs heatsink sizing for TC ≤ 75 °C operation.

Can AFV10700HSR5 be used in push-pull configuration?

Yes, the AFV10700HSR5 is explicitly qualified for push-pull, single-ended, and quadrature configurations per its datasheet features. Its symmetrical dual-gate/dual-drain structure (Gate A/B, Drain A/B) and matched channel characteristics enable balanced operation with inherent even-order harmonic suppression - critical for clean radar pulse spectral purity in systems like SSR and DME.

What ESD protection level does AFV10700HSR5 provide?

The AFV10700HSR5 provides Human Body Model (HBM) Class 2 protection (2000 V) and Charge Device Model (CDM) Class C3 protection (2000 V), as documented in Table 3 of the NXP datasheet. This level of on-die ESD hardening supports robust handling during automated SMT assembly and field maintenance in radar maintenance depots without requiring additional external protection circuitry.