Alpha & Omega Semiconductor Inc. AOZ1336DI

Overview

AOZ1336DI from Alpha and Omega Semiconductor is a single-channel smart load switch integrating an n-channel MOSFET with 27 mΩ typical R_DS(ON), supporting 4 A continuous current at input voltages from 0.8 V to 5.5 V and bias supply of 2.5 V to 5 V. It features independent ON-pin control, integrated 220 Ω output discharge resistor, thermal shutdown, and adjustable slew rate via external CT capacitor - deployed in portable computing power rail sequencing.

For engineers reviewing the AOZ1336DI datasheet, pinout, applications, or equivalent options, key selection considerations include its DFN-8L thermal pad package, VIN ≤ VBIAS dependency for low R_DS(ON), quiescent current of 50 µA, and precise turn-on/off timing control across varying input and bias conditions.

Technical Context

The AOZ1336DI implements a charge-pump–assisted gate driver architecture to maintain low on-resistance across wide VIN (0.8–5.5 V) and VBIAS (2.5–5.5 V) ranges, requiring VIN ≤ VBIAS for optimal 27 mΩ R_DS(ON). Its internal logic accepts TTL/CMOS-compatible ON-pin signals (V_ONH = 1.2 V, V_ONL = 0.5 V) to enable/disable the main NFET path.

Output slew rate is externally programmable via CT pin capacitance, enabling controlled voltage ramping (e.g., 22 µs rise time at 0.8 V with 220 pF), while integrated 220 Ω pull-down ensures rapid VOUT discharge (<100 µs) when disabled. Thermal shutdown activates at 180°C junction temperature with 130°C hysteresis.

Key Specifications

Pinout & Package

AOZ1336DI uses a thermally enhanced 2 mm × 2 mm DFN-8L package with bottom-exposed pad (EPAD) that must be soldered to GND for thermal and electrical integrity. The package supports reflow assembly per JEDEC J-STD-020 and achieves 12°C/W junction-to-case thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar smart load switch applications.

Compared with TPS22916BLYFPR and RT9711CGJ5, the AOZ1336DI uniquely combines 4 A capability, adjustable slew rate, integrated discharge, and operation down to 0.8 V - making it optimal for high-density, multi-rail portable systems requiring precise power sequencing and thermal resilience.

Availability

AOZ1336DI is available at Aetrix Electronics and suitable for portable computing power rail control, ultrabook USB-C port management, tablet PC display backlight supply, SSD power domain isolation, and telecom/datacom board-level power gating requiring stable component supply and long-term lifecycle support.

Supply support for AOZ1336DI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha and Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, load switches, and power ICs for computing, consumer, and industrial markets.

The AOZ1336DI belongs to AOS's smart load switch product line, designed specifically for compact, high-current power rail sequencing in space-constrained portable electronics with stringent thermal and EMI requirements.

FAQ

What is the minimum input voltage supported by the AOZ1336DI?

The AOZ1336DI supports an input voltage range from 0.8 V to 5.5 V. This ultra-low 0.8 V minimum enables direct integration with sub-1 V processor I/O domains and advanced low-power SoC rails, provided VBIAS remains ≥ VIN and within its 2.5–5.5 V operating window. Operation below 0.8 V is not characterized or guaranteed.

How does the CT pin affect AOZ1336DI switching behavior?

The CT pin on the AOZ1336DI sets output slew rate by connecting an external capacitor to GND. Larger CT values increase rise/fall times - e.g., 220 pF yields ~22 µs at 0.8 V, while 1000 pF extends it to ~1.6 ms. This programmability prevents inrush current peaks and EMI during turn-on, directly shaping VOUT transient response per application needs.

Does the AOZ1336DI require an external discharge resistor?

No, the AOZ1336DI integrates a 220 Ω internal pull-down resistor between OUT and GND. When the device is disabled (ON = low), this resistor actively discharges the output node to <10% of VOUT within 100 µs, eliminating the need for external components and ensuring clean, predictable power-down behavior in hot-swap or sequencing applications.

What thermal derating applies to AOZ1336DI at 85°C ambient?

At TA = +85°C, the AOZ1336DI maintains its full 4 A continuous current rating only with adequate PCB thermal design - specifically, a 2-layer board with ≥1 in² copper pour connected to the EPAD and minimal trace resistance. Without thermal enhancement, current must be reduced per the R_DS(ON)-vs-TJ curve and θ_JA = 90°C/W specification to keep TJ ≤ 150°C.

Can AOZ1336DI operate with VIN greater than VBIAS?

Yes, the AOZ1336DI can operate with VIN > VBIAS, but R_DS(ON) increases significantly - e.g., rising from 27 mΩ (typ.) to >33 mΩ when VIN exceeds VBIAS. For optimal efficiency and thermal performance, AOS specifies VIN ≤ VBIAS. Designs requiring VIN > VBIAS must verify conduction loss and junction temperature under worst-case load conditions.