Diodes Incorporated AP2213D-3.0TRE1

Overview

AP2213D-3.0TRE1 from Diodes Incorporated is a fixed 3.0V, 500mA low-noise LDO regulator with 350mV typical dropout at full load, ±1% output voltage accuracy, and 75dB PSRR at 100Hz. It features logic-compatible enable control, 1µA max standby current, and reversed current protection-designed for noise-sensitive RF electronics and battery-powered portable devices.

For engineers reviewing the AP2213D-3.0TRE1 datasheet, AP2213D-3.0TRE1 pinout, AP2213D-3.0TRE1 application, or AP2213D-3.0TRE1 equivalent, key selection criteria include dropout performance under 500mA load, thermal resistance in TO-252-2 (3), BYP capacitor dependency for noise reduction, and shutdown behavior with VIL ≤ 0.4V.

Technical Context

The AP2213D-3.0TRE1 uses a bandgap-referenced linear regulation architecture with internal current limiting and thermal shutdown circuitry. Its enable input accepts CMOS/TTL logic levels (VIH ≥ 2.0V, VIL ≤ 0.4V) to control output state without external biasing.

Low-noise operation relies on a dedicated BYP pin connected to a 100pF capacitor to stabilize the internal reference; omitting this capacitor increases output noise but improves startup speed. Dropout voltage remains stable across -40°C to +125°C junction temperature range, with worst-case 700mV at 500mA and TJ = +125°C.

Key Specifications

Pinout & Package

AP2213D-3.0TRE1 is supplied in the TO-252-2 (3) surface-mount package (also known as DPAK), featuring exposed thermal pad for enhanced heat dissipation. Thermal resistance θ_JA is 90°C/W without heatsink; θ_JC is 20°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1703T-3002E/MB and XC6210B302MR-G, AP2213D-3.0TRE1 uniquely combines 500mA capability, 350mV dropout, 75dB 100Hz PSRR, and a dedicated BYP pin-making it the only option among the three qualified for RF LNA biasing in battery-constrained designs.

Availability

AP2213D-3.0TRE1 is available at Aetrix Electronics and suitable for RF transceiver power supplies, portable medical sensor hubs, and industrial handheld scanners requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free packaging.

Supply support for AP2213D-3.0TRE1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with manufacturing certified to IATF 16949 and product qualification per AEC-Q100/101/200 standards.

The AP2213 series belongs to Diodes' high-performance LDO portfolio targeting battery-powered and noise-sensitive applications-designed specifically for RF, portable computing, and industrial edge devices where low dropout, low noise, and robust protection are mandatory.

FAQ

What is the minimum input voltage required for AP2213D-3.0TRE1 to maintain regulation?

The minimum input voltage is VOUT + VDROP = 3.0V + 0.35V = 3.35V at 500mA and +25°C. At higher temperatures or full load, worst-case dropout reaches 700mV, so design margin requires VIN ≥ 3.7V. Below 3.35V, output voltage drops nonlinearly and regulation is lost.

Can the BYP pin be left unconnected, and what is the impact?

Yes, the BYP pin may be left open. Doing so eliminates the 100pF bypass capacitor, increasing output noise from 260µV_RMS to ~800µV_RMS, but improves startup time by ~3×. This trade-off is acceptable in digital-only applications where noise immunity is secondary to fast wake-up response.

Does AP2213D-3.0TRE1 require an output capacitor, and what value is recommended?

Yes-an output capacitor is mandatory for stability. With BYP = 100pF, a minimum 2.2µF ceramic capacitor is required; without BYP, ≥1.0µF suffices. Capacitor ESR must remain within the stable region shown in the datasheet's ESR vs. IOUT plots-typically <1Ω for 2.2µF X7R types.

How does thermal performance differ between TO-252-2 (3) and SOIC-8 packages?

TO-252-2 (3) has θ_JA = 90°C/W (no heatsink), enabling 500mA operation up to +70°C ambient; SOIC-8 has θ_JA = 160°C/W, limiting same-load operation to ≤+50°C ambient without copper pour. The TO-252-2 (3) package's exposed thermal pad must be soldered to ≥1cm² PCB copper area for rated performance.