Diodes Incorporated AP2213M-3.3TRG1

Overview

AP2213M-3.3TRG1 from Diodes Incorporated is a fixed 3.3V, 500mA low-noise LDO regulator with 350mV typical dropout at full load, ±1% output accuracy, and 75dB PSRR at 100Hz. It features logic-compatible enable control, 1µA max standby current, and reversed current protection-designed for noise-sensitive RF electronics and battery-powered portable devices.

For engineers reviewing the AP2213M-3.3TRG1 datasheet, AP2213M-3.3TRG1 pinout, AP2213M-3.3TRG1 application, or AP2213M-3.3TRG1 equivalent, key selection criteria include dropout voltage under 500mA load, thermal shutdown behavior in SOIC-8, BYP capacitor interaction for noise reduction, and compatibility with 100pF bypass networks in compact layouts.

Technical Context

The AP2213M-3.3TRG1 integrates a bandgap reference, error amplifier, and PMOS pass transistor in a single SOIC-8 package. Its enable input accepts TTL/CMOS logic levels (VIH ≥ 2.0V, VIL ≤ 0.4V), and the BYP pin connects to a 100pF capacitor to suppress reference noise-reducing output noise to 260µV_RMS while narrowing ESR stability margins.

Thermal protection activates at +150°C junction temperature, with θ_JA = 160°C/W and θ_JC = 45°C/W for the SOIC-8 variant. Over-current limit is 700–1000mA, and ground pin current ranges from 100µA (light load) to 20mA (500mA output), directly impacting total supply current calculation.

Key Specifications

Pinout & Package

AP2213M-3.3TRG1 uses the SOIC-8 package (body size 4.9mm × 6.0mm, lead pitch 1.27mm), with exposed pad not electrically connected. Thermal resistance is θ_JA = 160°C/W (no heatsink) and θ_JC = 45°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1703T-3302E/MB and TLS850B2TE/V2, AP2213M-3.3TRG1 uniquely balances ultra-low noise (260µV_RMS), true reverse-current blocking, and 1µA shutdown-making it optimal for portable, battery-constrained, and RF-sensitive systems where those three parameters are simultaneously critical.

Availability

AP2213M-3.3TRG1 is available at Aetrix Electronics and suitable for wireless sensor nodes, USB peripheral power management, and medical wearable front-end circuits requiring stable component supply across production lifecycles.

Supply support for AP2213M-3.3TRG1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers in Asia, Europe, and the US, and manufacturing in ISO/TS 16949-certified facilities.

The AP2213 series belongs to Diodes' precision LDO portfolio, engineered specifically for noise-sensitive, battery-operated, and space-constrained applications demanding high PSRR, low dropout, and robust protection features.

FAQ

What is the minimum input voltage required for AP2213M-3.3TRG1 to maintain regulation?

The minimum input voltage is 3.65V: 3.3V nominal output plus 350mV typical dropout voltage, with additional margin for line/load regulation and temperature drift. At 500mA load and +85°C ambient, design for ≥4.0V input to ensure stable operation across process and temperature extremes.

Can the BYP pin be left unconnected without compromising stability?

Yes-leaving BYP open disables the internal reference bypass, increasing output noise to ~450µV_RMS but widening the stable ESR range for output capacitors and improving startup time. Stability is maintained with ≥2.2µF ceramic output capacitance and no BYP capacitor.

Does AP2213M-3.3TRG1 require an input capacitor, and what value is recommended?

Yes-a minimum 1.0µF X5R/X7R ceramic capacitor must be placed between VIN and GND, located within 5mm of pins 1 and 2. This suppresses high-frequency noise from upstream converters and prevents oscillation during load transients.

How does thermal shutdown behave during sustained overload conditions?

When junction temperature reaches +150°C, thermal shutdown disables the pass transistor and holds VOUT at 0V until TJ drops below +135°C (typical hysteresis). During this cycle, EN remains functional-allowing external logic to monitor fault state and initiate recovery sequencing.