Diodes Incorporated AP22908CN4-7

Overview

AP22908CN4-7 from Diodes Incorporated is a single-channel, slew-rate-controlled high-side load switch based on a P-channel MOSFET, designed for power domain sequencing and inrush current suppression in portable electronics. It operates from 1.08V to 3.6V input, delivers up to 1.5A continuous output current, features 28mΩ typical R_DS(ON) at 3.6V, and draws only 0.05µA quiescent current - enabling use in battery-powered wearables and smartphones.

For engineers reviewing the AP22908CN4-7 datasheet, AP22908CN4-7 pinout, AP22908CN4-7 application, or AP22908CN4-7 equivalent, this device is selected for low-voltage, high-efficiency load switching where controlled turn-on timing, ultra-low shutdown current, and integrated output discharge are required - not for gate driving, voltage regulation, or signal switching.

Technical Context

The AP22908CN4-7 integrates an internal slew-rate control circuit that limits dV/dt at VOUT during turn-on, preventing large inrush currents into capacitive loads. Its active-high ON pin accepts VIH ≥ 0.9V and supports direct interfacing with 1.2V–3.6V logic without level shifting.

A dedicated internal discharge FET (R_DIS = 80Ω typical) actively pulls VOUT to GND when disabled, eliminating hold-up voltage and enabling fast system power-down. The device uses a P-channel MOSFET topology with source tied to VIN and drain connected to VOUT, requiring no external bootstrap components.

Key Specifications

Pinout & Package

The AP22908CN4-7 is packaged in the X1-WLB0909-4 wafer-level chip-scale package: 0.87mm × 0.87mm, 0.5mm ball pitch, 4-ball array with backside laminate, RoHS-compliant SnAgCu solder balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side load switch applications.

Compared with TPS22915BYFPR, AP22908CN4-7 trades 9mΩ higher R_DS(ON) for 50× lower IQ and built-in discharge, making it superior for battery-critical applications. Unlike MCP1643T-E/OT, it provides true rail-switching functionality without regulation overhead or fixed-output constraints.

Availability

AP22908CN4-7 is available at Aetrix Electronics and suitable for smartphone power sequencing, wearable sensor hub supply, and portable medical glucose monitor designs requiring stable component supply, long-term lifecycle assurance, and consistent wafer-level packaging performance.

Supply support for AP22908CN4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for consumer, industrial, and automotive markets.

The AP22908 belongs to Diodes' load switch product line, engineered specifically for low-voltage, high-density portable electronics where inrush control, ultra-low IQ, and minimal footprint are mandatory design criteria.

FAQ

What is the maximum continuous output current rating for AP22908CN4-7?

The AP22908CN4-7 is rated for 1.5A continuous output current when VIN ≥ 1.2V and ambient temperature is within –40°C to +85°C. This rating assumes proper PCB thermal design using the X1-WLB0909-4 package's 136°C/W junction-to-ambient thermal resistance and adequate copper pour area.

Does AP22908CN4-7 require an external pull-up resistor on the ON pin?

No. The ON pin is active-high with VIH minimum of 0.9V and VIL maximum of 0.38V, allowing direct connection to 1.2V, 1.8V, or 3.3V GPIO without external pull-up. Internal logic thresholds ensure reliable turn-on even with weak drive sources, eliminating BOM cost and layout complexity.

Can AP22908CN4-7 operate from a 1.08V input supply?

Yes. The device is fully specified down to 1.08V input, with R_DS(ON) = 112mΩ typical at 1.08V and +25°C. At this voltage, it supports up to 1.5A output with appropriate thermal derating, making it suitable for ultra-low-voltage subsystems like sub-1.2V memory rails or advanced process node peripherals.

How does the integrated output discharge function work?

When the ON pin is driven low, an internal NMOS discharge FET (R_DIS = 80Ω typical) connects VOUT to GND, actively discharging load capacitance. This eliminates residual voltage that could cause latch-up or false wake events, and replaces the need for external 100Ω–1kΩ discharge resistors typically used with basic high-side switches.