Diodes Incorporated AP33510S9-13

Overview

AP33510S9-13 from Diodes Incorporated is a quasi-resonant flyback GaN FET controller in SSOP-9 (Type CJ) package, designed for offline AC/DC power supplies requiring <25 mW no-load standby power, valley-locked QR switching up to 150 kHz, and integrated X-cap discharge. It delivers high-power density in USB PD 3.0/PPS quick chargers and industrial adapters with 9–40 V_VCC, 120 V_{VCC_IN} LDO input, and 25–150 kHz adaptive frequency foldback.

For engineers reviewing the AP33510S9-13 datasheet, AP33510S9-13 pinout, AP33510S9-13 application, or AP33510S9-13 equivalent, this controller's valley-lockout timing, DEMAG-based line compensation, burst-mode entry at 0.333–0.567 V_DEMAG, and HV-startup current sourcing (1–2 mA) are critical for low-audible-noise, high-efficiency GaN flyback design validation.

Technical Context

The AP33510S9-13 implements proprietary valley-lock technology that fixes the turn-on valley position during load transients to suppress frequency-hopping audible noise, while maintaining true valley-switching down to 25 kHz minimum frequency. Its DEMAG pin senses auxiliary winding voltage with 35 mV zero-current detection threshold and 1.5 μs blanking time to enable accurate V_OUT OVP/UVP and bulk OVP via IDEMAG current thresholds (−1336 to −1100 μA).

It integrates a wide-input (0–120 V) VCC_IN LDO delivering regulated 8–15 V VCC across line conditions, plus an on-chip X-cap discharge circuit sourcing 2–4 mA through the HV pin for 60 ms after AC removal-eliminating external bleed resistors. The gate driver provides 5.4 V high-level output with 450 ns rise time and 50 ns fall time into 1 nF load, optimized for low-Q_g GaN FETs with Kelvin source (SK) connection.

Key Specifications

Pinout & Package

Packaged in SSOP-9 (Type CJ), a 9-pin surface-mount package with 0.65 mm pitch and exposed thermal pad for enhanced thermal performance in high-density adapter PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quasi-resonant GaN flyback controller applications.

Compared with AP3304A, the AP33510S9-13 offers identical pinout and valley-lock behavior but higher operating current and looser ZCD tolerance-making it suitable for cost-optimized legacy adapters where qualification overhead is prohibitive. MP6908A serves a fundamentally different circuit role and cannot fulfill primary-side control functions.

Availability

AP33510S9-13 is available at Aetrix Electronics and suitable for USB PD quick chargers, industrial AC/DC adapters, consumer laptop power supplies, and smart home embedded power systems requiring stable component supply and long-term lifecycle support.

Supply support for AP33510S9-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The AP33510 belongs to Diodes' GaN Power Controller product line, engineered specifically for high-density, low-standby-power offline flyback converters targeting USB-C PD, fast charging, and industrial power applications.

FAQ

What is the purpose of the SK (Kelvin Source) pin on the AP33510S9-13?

The SK pin provides a dedicated Kelvin connection to the GaN FET's source terminal, separating high-current power ground from sensitive control ground. This eliminates voltage drop errors across PCB traces and sense resistors during fast dI/dt switching, ensuring accurate current sensing and preventing false OCP triggering due to ground bounce.

How does the AP33510S9-13 implement X-capacitor discharge without external components?

The AP33510S9-13 monitors AC line status via the HV pin voltage. When AC is removed, an internal 60 ms timer triggers a 3 mA discharge current sourced from HV to GND for 60 ms. This repeats until HV voltage falls below 10 V-even if VCC drops below UVLO-fully discharging Class-X capacitors per IEC 62368-1 safety requirements without bleed resistors.

Can the AP33510S9-13 be used with silicon MOSFETs instead of GaN FETs?

Yes, the AP33510S9-13 supports silicon MOSFETs, but its gate drive strength (5.4 V high, 450 ns rise time) and valley-lock optimization are tuned for GaN's lower Q_g and faster switching. With silicon MOSFETs, maximum frequency may be limited by slower device recovery, and valley detection accuracy may degrade due to higher COSS variation-requiring careful transformer and snubber design.

What protection features are implemented on the DEMAG pin beyond OVP/UVP?

In addition to SOVP/SUVP, the DEMAG pin enables bulk OVP (via IDEMAG = −1218 μA threshold), brown-in/out detection (IDEMAG_BNI/BNO), high/low line switching (IDEMAG_HLSW/LHSW), and zero-current detection (35 mV threshold). These functions collectively provide transformer reset monitoring, input line qualification, and comprehensive fault coverage without secondary-side components.