Diodes Incorporated AP7341D-32FS4-7

Overview

AP7341D-32FS4-7 from Diodes Incorporated is a 300mA, 3.2V fixed-output low-dropout linear regulator in X2-DFN1010-4 package, featuring ±1% output voltage accuracy, 75dB PSRR at 1kHz, 60µV_rms output noise (10Hz–100kHz), and 35µA quiescent current. It integrates enable control, short-circuit protection, and thermal shutdown, and is optimized for RF supply and portable media applications requiring stable, low-noise bias.

For engineers reviewing the AP7341D-32FS4-7 datasheet, AP7341D-32FS4-7 pinout, AP7341D-32FS4-7 application, or AP7341D-32FS4-7 equivalent, key selection criteria include dropout voltage at 300mA (≤270mV @ V_OUT=3.2V), EN logic thresholds (V_IL ≤0.5V, V_IH ≥1.3V), thermal pad grounding practice, and compatibility with 1µF ceramic C_IN/C_OUT.

Technical Context

The AP7341D-32FS4-7 employs a CMOS-based LDO architecture with integrated voltage reference, error amplifier, and current-limit circuitry. Its enable input directly controls NMOS pass transistor gate drive, allowing fast turn-on/turn-off with defined logic thresholds and sub-1µA standby current.

It delivers regulated 3.2V output across 1.7V–5.25V input range, maintaining ±1.5% accuracy over −40°C to +85°C ambient. The device uses internal resistor network for fixed output and includes auto-discharge functionality via integrated 30Ω N-channel FET when disabled.

Key Specifications

Pinout & Package

AP7341D-32FS4-7 is housed in a 1.0mm × 1.0mm X2-DFN1010-4 package with wettable flank leads and exposed thermal pad (connected to GND in PCB layout). The package supports high-density routing and efficient thermal dissipation via copper pour under the pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700-3302E/TO and XC6219B322MR-G, AP7341D-32FS4-7 uniquely balances 300mA capability, 75dB PSRR, 60µV_rms noise, and 1.0mm² footprint - making it optimal for space-constrained, noise-sensitive RF and imaging subsystems requiring precise 3.2V bias.

Availability

AP7341D-32FS4-7 is available at Aetrix Electronics and suitable for RF power amplifier bias, camera image sensor core supply, portable media player audio codec, and wireless adapter baseband processor applications requiring stable component supply, tight voltage tolerance, and low-noise regulation.

Supply support for AP7341D-32FS4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in power management, signal integrity, and connectivity solutions for consumer, industrial, and automotive markets.

The AP7341 series belongs to Diodes' high-PSRR, low-noise LDO product line, designed specifically for noise-sensitive portable electronics where clean, compact, and efficient voltage regulation is critical.

FAQ

What is the maximum allowable input voltage for AP7341D-32FS4-7?

The absolute maximum input voltage is 6.0V, but recommended operating range is 1.7V to 5.25V. Exceeding 5.25V risks violating safe operating area limits and may trigger overvoltage protection or cause permanent damage. Operation above 5.25V is not characterized and violates datasheet specifications.

Does AP7341D-32FS4-7 require an external discharge resistor?

No. AP7341D-32FS4-7 includes an integrated 30Ω N-channel FET that automatically discharges the output capacitor when the EN pin is pulled low. This eliminates need for external bleed resistors and ensures rapid, controlled VOUT decay during shutdown sequences.

Can AP7341D-32FS4-7 be used with ceramic output capacitors smaller than 1µF?

Yes - the device is stable with ceramic capacitors as low as 0.47µF, per datasheet recommendations. However, 1µF is specified for optimal transient response and PSRR performance. Using <1µF may reduce load-step immunity and increase output voltage deviation under dynamic current changes.

How is thermal performance affected if the thermal pad is left unconnected?

Leaving the thermal pad unconnected increases junction-to-ambient thermal resistance by ~60°C/W, severely limiting usable output current. At 300mA, this can cause thermal shutdown or accelerated parametric drift. Diodes recommends connecting the pad to a solid GND copper pour covering ≥25mm² for reliable operation.