Diodes Incorporated AP7343-10W5-7

Overview

AP7343-10W5-7 from Diodes Incorporated is a 300mA CMOS low-dropout regulator with fixed 1.0V output, ±1% accuracy, 75dB PSRR at 1kHz, 60µVrms output noise (10Hz–100kHz), and 35µA quiescent current. It features enable control, thermal shutdown, and short-circuit protection, and is optimized for RF supply rails in compact portable electronics.

For engineers reviewing the AP7343-10W5-7 datasheet, AP7343-10W5-7 pinout, AP7343-10W5-7 application, or AP7343-10W5-7 equivalent, key selection criteria include dropout voltage at 300mA (0.46–0.72V depending on VOUT), EN logic thresholds (0.5V low / 1.3V high), thermal resistance (179°C/W in SOT25), and compatibility with 1µF ceramic input/output capacitors.

Technical Context

The AP7343-10W5-7 implements a CMOS-based LDO architecture with integrated voltage reference, error amplifier, current limit circuit, and thermal shutdown. Its enable input (EN) provides precise on/off control without floating-state risk, and its internal design ensures stable regulation across –40°C to +85°C ambient.

It delivers 1.0V output with ±1% initial accuracy and ±30ppm/°C temperature coefficient, supports input voltages from 1.7V to 5.25V, and maintains 75dB ripple rejection at 1kHz under 30mA load - critical for noise-sensitive RF and analog subsystems.

Key Specifications

Pinout & Package

AP7343-10W5-7 is packaged in SOT25 (5-pin, 2.9mm × 1.6mm × 1.1mm), a surface-mount package with exposed pad for thermal enhancement. Pin 1 = VIN, Pin 2 = GND, Pin 3 = EN, Pin 4 = VOUT, Pin 5 = NC (no connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700T-1002E/TT and XC6210B102MR-G, AP7343-10W5-7 uniquely balances 300mA drive, ±1% accuracy, 75dB/1kHz PSRR, and 60µVrms noise in a thermally enhanced SOT25 - making it optimal for RF and high-speed imaging power domains where both current and spectral purity are critical.

Availability

AP7343-10W5-7 is available at Aetrix Electronics and suitable for RF power amplifier biasing, mobile camera sensor core supplies, Bluetooth SoC I/O domains, and wearable optical AFEs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for AP7343-10W5-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The AP7343 series belongs to Diodes' high-PSRR, low-noise LDO product line, engineered specifically for noise-sensitive portable communication equipment including smartphones, tablets, and wireless adapters.

FAQ

What is the minimum input voltage required for AP7343-10W5-7 to regulate 1.0V output at 300mA?

The absolute minimum input voltage is determined by dropout: at 300mA and 1.0V output, typical dropout is 0.46V in SOT25, so VIN must be ≥1.46V. The datasheet specifies 1.7V as the guaranteed minimum operating input voltage across temperature and process variation, ensuring reliable start-up and regulation under worst-case conditions.

Does AP7343-10W5-7 include an output discharge function?

No. AP7343-10W5-7 is the non-discharge variant (ordering code lacks "D" prefix). It does not integrate an internal pull-down transistor on VOUT; therefore, the output voltage decays only through external load or board leakage. For rapid VOUT discharge during shutdown, an external resistor or dedicated discharge FET is required.

Can AP7343-10W5-7 operate with only a 0.47µF input capacitor?

Yes - the datasheet recommends a minimum 0.47µF ceramic capacitor between VIN and GND. This value ensures adequate input decoupling for stability and transient suppression under typical load steps. However, for systems with high di/dt loads (e.g., burst-mode transceivers), a 1µF or larger input capacitor is advised to further reduce input rail sag.

How does thermal performance differ between SOT25 and X2-DFN1010-4 packages for AP7343?

In SOT25, R_θJA is 179°C/W; in X2-DFN1010-4 (Type B), it is 237°C/W - meaning the smaller DFN package runs hotter under identical power dissipation due to reduced copper area. However, the DFN's lower R_θJC (96°C/W vs. 52°C/W) enables better heat transfer to the PCB if the exposed pad is properly soldered to a large thermal pad connected to internal ground planes.