Diodes Incorporated AP7343-30W5-7

Overview

AP7343-30W5-7 from Diodes Incorporated is a 300mA, 3.0V fixed-output low-dropout linear regulator with ±1% output voltage accuracy, 75dB PSRR at 1kHz, and 60µV_rms output noise (10Hz–100kHz). Built on a CMOS process, it features enable control, thermal shutdown, and short-circuit protection-designed for RF supply rails in portable wireless devices where low noise and high power-supply rejection are critical.

For engineers reviewing the AP7343-30W5-7 datasheet, AP7343-30W5-7 pinout, AP7343-30W5-7 application, or AP7343-30W5-7 equivalent, key selection criteria include dropout voltage (≤290mV at 300mA), quiescent current (35µA typ), EN logic thresholds (V_IL ≤ 0.5V, V_IH ≥ 1.3V), and thermal resistance (179°C/W in SOT25) for compact battery-powered designs.

Technical Context

The AP7343-30W5-7 implements a CMOS-based LDO architecture with integrated voltage reference, error amplifier, current-limit circuit, and thermal shutdown. Its enable input controls NMOS pass transistor conduction, allowing fast turn-on/turn-off with minimal standby current (10nA typ in shutdown).

It delivers stable 3.0V output across 1.7V–5.25V input range and supports load transients up to 300mA with <±20mV regulation deviation. The device lacks built-in discharge (non-D variant), requiring external pull-down if rapid VOUT decay is needed after disable.

Key Specifications

Pinout & Package

AP7343-30W5-7 is packaged in SOT25 (5-pin, 2.9mm × 1.6mm × 1.1mm), a surface-mount package optimized for space-constrained portable PCBs. The exposed pad (EP) must be connected to GND via large copper area for thermal dissipation but is not electrically functional as GND.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700-3002E/TO and XC6210B302MR-G, AP7343-30W5-7 uniquely balances 300mA drive, 75dB PSRR, thermal protection, and enable control in a footprint-optimized SOT25-making it the only choice for thermally constrained, noise-sensitive RF subsystems requiring dynamic power gating.

Availability

AP7343-30W5-7 is available at Aetrix Electronics and suitable for RF power amplifier bias, Wi-Fi transceiver core supply, smartphone camera ISP power, and portable media player audio DAC applications requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for AP7343-30W5-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.

The AP7343 series belongs to Diodes' high-performance LDO portfolio, engineered specifically for noise-critical portable electronics-including smartphones, tablets, and wireless infrastructure-where PSRR, output accuracy, and small-footprint thermal design are non-negotiable.

FAQ

What is the minimum input voltage required for AP7343-30W5-7 to regulate 3.0V output at 300mA?

The minimum input voltage is determined by dropout voltage: at 300mA and +25°C, dropout is 220–290mV in SOT25. Thus, VIN must be ≥3.22V to sustain regulation. At -40°C or +85°C, worst-case dropout reaches 310mV, requiring VIN ≥3.31V for guaranteed operation across temperature.

Can AP7343-30W5-7 be used without an enable signal?

Yes-EN can be permanently tied to VIN to keep the regulator continuously enabled. However, the EN pin must never float; an unconnected EN may cause erratic startup or latch-up. If unused, connect EN directly to VIN with a short, low-inductance trace.

Is an external discharge FET required for AP7343-30W5-7?

Yes-AP7343-30W5-7 is the non-discharge variant (no "D" suffix). When disabled, VOUT remains charged until leakage discharges it slowly. For rapid VOUT decay (e.g., to meet USB suspend timing), add an external NMOS FET between VOUT and GND, controlled by EN inverted.

How does thermal performance differ between SOT25 and X2-DFN1010-4 packages?

SOT25 has θ_JA = 179°C/W; X2-DFN1010-4 has θ_JA = 237°C/W. Despite smaller size, the DFN's exposed pad offers superior thermal transfer when soldered to a large GND copper area-achieving lower junction temperature under identical 300mA load and ambient conditions.