Diodes Incorporated AP7354D-12FS4-7

Overview

AP7354D-12FS4-7 from Diodes Incorporated is a 1.2V fixed-output, 150mA ultra-low quiescent current LDO regulator in X2-DFN1010-4 (Type B) package with integrated active output discharge, ±1% output accuracy at +25°C, and 0.25µA typical quiescent current-designed for power management in compact, battery-constrained wearable sensors and IoT edge nodes.

For engineers reviewing the AP7354D-12FS4-7 datasheet, AP7354D-12FS4-7 pinout, AP7354D-12FS4-7 application, or AP7354D-12FS4-7 equivalent, key selection criteria include its 0.02µA standby current, 35Ω active discharge resistance, dropout voltage of 0.60V at 150mA/1.2V, and compatibility with 0.1µF ceramic input/output capacitors in space-limited layouts.

Technical Context

The AP7354D-12FS4-7 integrates a precision voltage reference, error amplifier, current-limit circuit, and enable control logic to deliver stable 1.2V regulation across 2.0V–5.5V input range. Its internal resistor network fixes the output, eliminating external feedback components.

Unlike standard AP7354 variants, the "D" suffix denotes built-in active output discharge via an internal NMOS switch tied to the EN pin, enabling rapid VOUT collapse during shutdown-critical for sequencing-sensitive systems and low-power wake-up integrity.

Key Specifications

Pinout & Package

X2-DFN1010-4 (Type B) package: 1.0mm × 1.0mm, 0.65mm pitch, 0.39mm height, NiPdAu-plated copper leads, moisture sensitivity level 1, thermal resistance θ_JA = 295°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar LDO regulator applications.

Compared with MCP1700T-1202E/TT and XC6210B122MR-G, the AP7354D-12FS4-7 uniquely combines sub-µA quiescent current, enable control, and integrated discharge in a 1.0mm² DFN-making it optimal for space-constrained, deeply sleep-capable systems requiring precise power sequencing.

Availability

AP7354D-12FS4-7 is available at Aetrix Electronics and suitable for wearable electronics, IoT sensor modules, and wireless communication devices requiring stable component supply with guaranteed long-term manufacturability and RoHS/Green compliance.

Supply support for AP7354D-12FS4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The AP7354 series belongs to Diodes' ultra-low IQ LDO portfolio, engineered specifically for extended-battery-life applications in wearables, medical sensors, and edge IoT nodes where micropower efficiency and small footprint are mandatory.

FAQ

What is the function of the EN pin on AP7354D-12FS4-7?

The EN pin is an active-high enable input: driving it ≥1.0V turns the regulator ON and delivers 1.2V to VOUT; pulling it ≤0.4V places the device in shutdown mode with 0.02µA standby current. It must never be left floating-tie to VIN if unused. This pin also controls the internal discharge FET, collapsing VOUT rapidly when disabled.

Can AP7354D-12FS4-7 operate with input voltage below 2.0V?

No. The absolute minimum recommended input voltage is 2.0V per the datasheet's Recommended Operating Conditions. Operation below this risks failure to regulate, increased dropout, or undefined behavior. At 1.2V output, the minimum functional VIN is 1.8V only under ideal conditions-but 2.0V is the guaranteed lower limit for specification compliance across temperature and process variation.

Is external output capacitance required, and what type is recommended?

Yes, a minimum 0.1µF ceramic capacitor (X5R or X7R dielectric) is required between VOUT and GND for stability and transient response. Larger values improve load-step immunity but are not mandatory. Avoid high-ESR electrolytics; low-ESR ceramics placed adjacent to the VOUT and GND pins minimize impedance and prevent oscillation.

How does the active output discharge feature behave during shutdown?

When EN is pulled low, an internal 35Ω NMOS switch connects VOUT to GND, discharging a 1µF load from 1.2V to <100mV in approximately 1ms. This prevents back-powering of upstream circuitry, avoids false wake-ups, and ensures clean power-state transitions-critical for systems with multiple regulated rails or isolated domains.