Diodes Incorporated AP9211SA-AM-HAC-7

Overview

AP9211SA-AM-HAC-7 from Diodes Incorporated is a single-chip Li+ battery protection IC integrating dual N-channel MOSFETs (common-drain configuration) in a U-DFN2030-6 (Type C) package. It delivers overcharge (4.375 V ±25 mV), overdischarge (2.500 V ±35 mV), discharge/charge overcurrent (±15 mV accuracy), and short-circuit protection for 1-cell lithium-ion packs, with built-in fixed delay timing and 0V battery charge permission.

For engineers reviewing the AP9211SA-AM-HAC-7 datasheet, AP9211SA-AM-HAC-7 pinout, AP9211SA-AM-HAC-7 application, or AP9211SA-AM-HAC-7 equivalent, this device serves as a fully integrated, low-quiescent-current (3.0 µA typ.) protection solution requiring no external timing components - critical for space-constrained portable electronics and power tool battery packs.

Technical Context

The AP9211SA-AM-HAC-7 implements independent voltage monitoring paths for VDD–VSS (cell voltage) and VM–VSS (current-sense differential), enabling simultaneous detection of overcharge, overdischarge, and overcurrent events. Its logic circuitry uses internal level-shifted drivers to control two integrated MOSFETs - one for charge path (S2–EP), one for discharge path (S1–EP) - with separate release thresholds and hysteresis.

It supports factory-configured options: auto-wake-up mode (vs. power-down), 0V battery charge permission, and fixed overvoltage charger detection (8.0 V ±2 V). Internal pull-up (RVMD) and pull-down (RVMS) resistors on the VM pin enable automatic status recovery without external biasing during overdischarge or overcurrent conditions.

Key Specifications

Pinout & Package

AP9211SA-AM-HAC-7 is housed in a thermally enhanced U-DFN2030-6 (Type C) package with an exposed thermal pad (EP) serving as the common drain node for both integrated MOSFETs. The 2.0 mm × 3.0 mm footprint supports high-density PCB layouts and requires a large copper pour connected to EP for effective heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar single-cell Li+ battery protection applications.

Compared with R5460K001C-TR and BD8637GUL, the AP9211SA-AM-HAC-7 uniquely combines integrated MOSFETs, factory-programmed 0V charge permission, auto-wake-up, and overvoltage charger detection - reducing component count by 5+ parts while enabling safer, longer-life battery operation in compact designs.

Availability

AP9211SA-AM-HAC-7 is available at Aetrix Electronics and suitable for power tool battery packs, wireless headphone charging cases, and portable medical monitors requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for AP9211SA-AM-HAC-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design, manufacturing, and distribution operations across Asia, the Americas, and Europe.

The AP9211 belongs to Diodes' battery protection IC product line, engineered specifically for high-reliability, space-constrained 1-cell Li+ applications - emphasizing integration, low power, and factory-configurable safety features.

FAQ

What is the function of the VM pin in the AP9211SA-AM-HAC-7?

The VM pin serves as the bidirectional current-sense input: its voltage relative to VSS determines charge/discharge direction and magnitude. During discharge, VM voltage rises above VSS proportional to load current; during charge, it drops below VSS. Internal RVMS and RVMD resistors enable automatic state recovery without external biasing.

Does the AP9211SA-AM-HAC-7 support overvoltage protection for the charger input?

Yes - it includes a dedicated overvoltage charger detection circuit with a fixed 8.0 V ±2 V threshold between VDD and VM. When exceeded, the charge MOSFET shuts off immediately (no delay), and resumes conduction only after voltage falls below 7.3 V ±2 V - protecting against incompatible or faulty chargers.

How does the auto-wake-up mode differ from power-down mode in this device?

In auto-wake-up mode (SA suffix), the IC remains active during overdischarge and recovers to normal operation when battery voltage rises above VDU and holds for tDLR. In power-down mode, the IC enters ultra-low-current sleep (≤0.1 µA) and requires charger connection to exit overdischarge - no voltage-based wake-up occurs.

What is the maximum continuous current the integrated MOSFETs can handle?

The integrated dual N-channel MOSFETs support 9.0 A continuous drain current at +25°C (TA) with VGS = 4.5 V, derating to 7.1 A at +70°C. This rating assumes proper PCB thermal design - including full-solder connection of the EP pad to ≥100 mm² copper area - to maintain junction temperature ≤150°C.