Diodes Incorporated AP9211SA-DD-HAC-7

Overview

AP9211SA-DD-HAC-7 from Diodes Incorporated is a single-chip Li+ battery protection IC integrating dual n-channel MOSFETs (common-drain configuration), overcharge/overdischarge voltage detection (±25 mV accuracy at +25°C), discharge overcurrent sensing (0.05–0.32 V range, ±15 mV accuracy), and short-circuit protection (0.45–0.7 V, ±100 mV). It operates in 1-cell Li-ion packs for portable power tools and medical handheld devices.

For engineers reviewing the AP9211SA-DD-HAC-7 datasheet, AP9211SA-DD-HAC-7 pinout, AP9211SA-DD-HAC-7 application, or AP9211SA-DD-HAC-7 equivalent, key selection criteria include its U-DFN2030-6 (Type C) package, 0.1 µA max power-down current, selectable 0V charge function, and integrated MOSFET R_SS(ON) of 27 mΩ (typ) at V_DD = 4.0 V.

Technical Context

The AP9211SA-DD-HAC-7 implements independent voltage monitoring paths for V_DD–V_SS (cell voltage) and V_M–V_SS (current-sense differential), with fixed delay timers (±20% accuracy at +25°C) for all protection events. Its logic circuitry controls gate drive to two internal MOSFETs using level-shifted signals to maintain operation across the full 1.5–5.5 V supply range.

It supports both power-down mode (0.1 µA max I_CC) and auto-wake-up functionality: in overdischarge, the latter enables recovery without charger connection when battery voltage rises above V_DU for t_DLR, while the former requires external charging to exit sleep state. The VM pin interfaces with an external sense resistor (R2 = 2.7 kΩ typical) to detect charge/discharge current polarity and magnitude.

Key Specifications

Pinout & Package

AP9211SA-DD-HAC-7 uses the U-DFN2030-6 (Type C) package with 6 terminals and an exposed thermal pad (EP). The EP serves as the common drain node for both internal MOSFETs and must be connected to a large copper pour for thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar battery protection applications.

Compared with S-8261AAB-M6T1U and RP506Kxx1x-TR-F, the AP9211SA-DD-HAC-7 delivers higher integration (no external FETs), unique overvoltage charger detection (8.0 V), and configurable 0V charge-making it optimal for space-constrained, safety-critical 1-cell Li+ systems requiring autonomous recovery and charger fault immunity.

Availability

AP9211SA-DD-HAC-7 is available at Aetrix Electronics and suitable for portable power tools, medical handheld devices, wearable fitness trackers, and Bluetooth headsets requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for AP9211SA-DD-HAC-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The AP9211 belongs to Diodes' battery protection IC product line, engineered specifically for compact, high-accuracy 1-cell Li+ battery pack safety-emphasizing low quiescent current, integrated MOSFETs, and configurable fault responses.

FAQ

What is the function of the VM pin on the AP9211SA-DD-HAC-7?

The VM pin is the current-sense input that monitors the voltage difference between itself and VSS to detect charge/discharge current direction and magnitude. It connects to an external sense resistor (R2) and interfaces with internal comparators for discharge overcurrent, short-circuit, and charge overcurrent protection. Its internal pull-up (RVMD) and pull-down (RVMS) resistors activate selectively during different fault states to ensure correct MOSFET control.

Does the AP9211SA-DD-HAC-7 support overvoltage protection for the charger input?

Yes-the AP9211SA-DD-HAC-7 includes a dedicated overvoltage charger detection circuit that monitors the voltage between VDD and VM pins. When this voltage exceeds 8.0 V (±2 V), the charging MOSFET is immediately disabled; release occurs at 7.3 V (±2 V). No delay timer is applied to this function, enabling instantaneous response to unsafe charger conditions.

How does the auto-wake-up mode differ from power-down mode in the AP9211SA-DD-HAC-7?

In auto-wake-up mode (enabled by 'A' suffix), the device remains active during overdischarge and can autonomously resume normal operation when battery voltage rises above V_DU for t_DLR. In power-down mode (default), the IC enters ultra-low-current sleep (≤0.1 µA) and requires external charger connection to reset-no autonomous recovery is possible without charging current.

What is the maximum continuous current the internal MOSFETs can handle?

The internal dual n-channel MOSFETs support 9.0 A continuous drain current at +25°C (V_GS = 4.5 V) and 7.1 A at +70°C, with a maximum drain-source voltage rating of 24 V. Thermal performance depends on PCB copper area under the EP pad; the datasheet specifies 1000 mW maximum power dissipation on a JEDEC High-K test board.