Diodes Incorporated AP9214LA-AA-HSBR-7

Overview

AP9214LA-AA-HSBR-7 from Diodes Incorporated is a single-chip Li+ battery protection IC integrating dual N-channel MOSFETs (RSS(ON) ≤16.5 mΩ @ 3.9V), overcharge/overdischarge voltage detection (±25 mV accuracy), discharge overcurrent sensing (±15 mV), and short-circuit protection with 0.6–1.4 μs response. It operates in 1-cell Li+ packs for portable power tools and medical devices requiring ultra-low quiescent current (3.0 µA typ) and thermal-efficient U-DFN2535-6 (Type B) packaging.

For engineers reviewing the AP9214LA-AA-HSBR-7 datasheet, AP9214LA-AA-HSBR-7 pinout, AP9214LA-AA-HSBR-7 application, or AP9214LA-AA-HSBR-7 equivalent, key selection criteria include selectable power-down mode (auto-wake-up enabled), 0V battery charge permission, overcharge auto-release behavior, and VM-sense resistor compatibility (R2 = 2.7 kΩ typical) in high-reliability battery management systems.

Technical Context

The AP9214LA-AA-HSBR-7 implements independent voltage monitoring paths for VDD–VSS (cell voltage) and VM–VSS (current-sense differential), with dedicated delay timers (tCU, tDL, tDOC) and hysteresis-controlled release thresholds. Its logic circuit drives two integrated N-MOSFETs with common drain (EP pad) to enable/discharge control without external gate drivers.

It supports dual operational modes: auto-wake-up (no charger required for overdischarge recovery) and fixed 0V charge enable. The VM pin interfaces with an external sense resistor (R2) to detect charge/discharge current polarity and magnitude, while RVMD/RVMS internal resistors provide pull-up/pull-down during fault states for automatic status restoration.

Key Specifications

Pinout & Package

AP9214LA-AA-HSBR-7 uses the U-DFN2535-6 (Type B) package with Pin-Out Option 2: S1/VSS/VDD/VM/S2/NC/EP. The exposed thermal pad (EP) serves as the common drain node for both MOSFETs and must be connected to a large PCB copper area for thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-cell Li+ battery protection applications.

Compared with S-8261AAL-M6T1U and RP502K001B-TR-F, AP9214LA-AA-HSBR-7 delivers full dual-MOSFET integration, auto-wake-up capability, and overvoltage charger monitoring-reducing external component count by up to 5 parts and enabling safer, more autonomous battery operation in mission-critical portable systems.

Availability

AP9214LA-AA-HSBR-7 is available at Aetrix Electronics and suitable for portable medical devices, cordless power tools, rugged handheld radios, and field diagnostic scanners requiring stable component supply, long-term lifecycle support, and automotive-grade reliability validation.

Supply support for AP9214LA-AA-HSBR-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with manufacturing certified to IATF 16949 and product qualification per AEC-Q100/101 standards.

The AP9214L series targets high-reliability 1-cell Li+ battery protection in portable industrial and medical equipment, emphasizing ultra-low power consumption, integrated MOSFETs, and configurable fault recovery behavior.

FAQ

What is the function of the VM pin in AP9214LA-AA-HSBR-7?

The VM pin serves as the bidirectional current-sense input: it measures voltage drop across an external sense resistor (R2) to detect charge/discharge direction and magnitude. During overcurrent or short-circuit events, it triggers MOSFET shutdown; during overvoltage charger detection, it monitors VDD–VM potential. Its internal RVMS/RVMD resistors enable automatic state recovery without external circuitry.

Does AP9214LA-AA-HSBR-7 support 0V battery charging, and how is it implemented?

Yes-AP9214LA-AA-HSBR-7 includes factory-enabled 0V battery charge functionality. When battery voltage is 0 V due to self-discharge, the IC permits charger current to flow once VDD rises above 1.2 V (V0CHA), bypassing normal under-voltage lockout. This is implemented via internal comparator circuitry that activates the charge MOSFET without requiring external wake signals or voltage boosters.

How does the auto-wake-up feature differ from power-down mode in this device?

Auto-wake-up (enabled in AP9214LA) allows overdischarge recovery without charger connection: the IC remains active and resumes normal operation when battery voltage rises above VDU (e.g., 2.5 V) for tDLR (e.g., 1.2 s). In contrast, power-down mode (AP9214L) forces deep sleep (0.1 µA), requiring charger application to exit overdischarge-making auto-wake-up essential for unattended or energy-harvesting systems.

What thermal design considerations apply to the EP pad on AP9214LA-AA-HSBR-7?

The EP pad is the common drain node for both integrated MOSFETs and must be soldered to ≥100 mm² of 2-ounce copper on the PCB's inner or bottom layer. Thermal vias (≥4 × 0.3 mm) should connect EP to internal ground planes. Without adequate copper area, junction temperature may exceed 150°C at 7.1 A continuous current, triggering thermal shutdown or degrading long-term reliability per DS38413 Rev. 4 absolute ratings.