Diodes Incorporated AP9214LA-AB-HSBR-7

Overview

AP9214LA-AB-HSBR-7 from Diodes Incorporated is a single-chip Li+ battery protection IC integrating dual N-channel MOSFETs (RSS(ON) = 13.5 mΩ typ at VDD = 3.9V) in a U-DFN2535-6 (Type B, Option 2) package. It provides overcharge (VCU = 4.250 V ±25 mV), overdischarge (VDL = 2.500 V ±35 mV), discharge/charge overcurrent (VDOC = 0.150 V ±15 mV; VCOC = −0.100 V ±15 mV), short-circuit (VSHORT = 0.550 V ±100 mV), and overvoltage charger (VOVCHG = 8.0 V ±2 V) protection for 1-cell Li+ packs. Used in portable power tools and medical handheld devices requiring integrated cell-level safety.

For engineers reviewing the AP9214LA-AB-HSBR-7 datasheet, AP9214LA-AB-HSBR-7 pinout, AP9214LA-AB-HSBR-7 application, or AP9214LA-AB-HSBR-7 equivalent, key selection criteria include selectable auto-wake-up mode, 0V battery charge enable, overcharge latch vs. auto-release configuration, and dual-MOSFET integration eliminating external FETs and sense resistors in compact battery packs.

Technical Context

The AP9214LA-AB-HSBR-7 implements independent voltage monitoring paths for VDD–VSS (cell voltage) and VM–VSS (current-sense differential), with dedicated comparators and fixed-delay logic blocks for each protection event. Its internal logic controls gate drive to two co-packaged N-channel MOSFETs sharing a common drain (EP pad), enabling bidirectional current control without external drivers.

It supports factory-configured options: auto-wake-up (not power-down), 0V battery charge enabled, and overcharge protection set to auto-release mode. The VM pin interfaces directly to a current-sense resistor (R2 = 2.7 kΩ typical), while VDD connects via R1 (330–470 Ω) to suppress supply transients - no external capacitors required beyond C1 = 100 nF.

Key Specifications

Pinout & Package

Package: U-DFN2535-6 (Type B), 2.5 mm × 3.5 mm × 0.55 mm, exposed thermal pad (EP), RoHS-compliant, halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-cell Li+ battery protection applications.

Compared with R5421N258AA-TR-FE and BD1400GUL, the AP9214LA-AB-HSBR-7 delivers true single-chip bidirectional protection, factory-set auto-wake-up, and 0V charge capability - making it the only option that meets stringent safety, autonomy, and space constraints in professional-grade portable equipment.

Availability

AP9214LA-AB-HSBR-7 is available at Aetrix Electronics and suitable for portable power tools, medical handhelds, wearable sensors, and IoT asset trackers requiring stable component supply, long-term lifecycle support, and guaranteed RoHS/Green compliance.

Supply support for AP9214LA-AB-HSBR-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The AP9214L series belongs to Diodes' Battery Protection IC product line, engineered specifically for high-reliability, space-constrained 1-cell Li+ applications where integration, precision, and ultra-low power are non-negotiable.

FAQ

What is the function of the NC pin (Pin 5) in AP9214LA-AB-HSBR-7?

Pin 5 is designated NC (No Connect) in the HSBR pin-out option and must remain unconnected and floating. It has no internal connection and serves only as a mechanical placeholder to maintain package symmetry. Connecting it risks unintended current paths or ESD vulnerability - Diodes Incorporated's datasheet explicitly prohibits soldering or routing to this terminal.

How does the auto-wake-up mode differ from power-down mode in this device?

Auto-wake-up (enabled in AP9214LA) keeps the IC fully active during overdischarge, allowing automatic recovery when battery voltage rises above VDU (2.500 V) and remains there for tDLR (overdischarge release delay). Power-down mode (AP9214L) forces deep sleep (0.1 µA), requiring external charger connection to exit overdischarge - no voltage-based self-recovery is possible.

Can AP9214LA-AB-HSBR-7 support a 50 mΩ current-sense resistor for 3 A overcurrent detection?

Yes. With VDOC = 0.150 V ±15 mV and a 50 mΩ sense resistor, the device triggers at 3.0 A (0.150 V ÷ 0.050 Ω), well within its specified accuracy and temperature range (−40°C to +85°C). The datasheet confirms VDOC stability across temperature, and the 0.150 V threshold ensures reliable trip margin even with resistor tolerance and layout parasitics.

Is the EP thermal pad electrically isolated or connected internally?

The EP pad is the common drain node for both integrated N-channel MOSFETs and is electrically connected to the internal power path - it is not isolated. Diodes Incorporated's datasheet mandates connecting EP to a large PCB copper pour tied to the system ground plane to dissipate heat and reduce thermal resistance; leaving it unconnected causes excessive junction temperature and premature failure under load.