Diodes Incorporated AP9214LA-AE-HSBR-7

Overview

AP9214LA-AE-HSBR-7 from Diodes Incorporated is a single-chip Li+ battery protection IC integrating dual N-channel MOSFETs (R_SS(ON) = 13.5 mΩ typ at V_DD = 3.9 V) and precision voltage/current monitoring circuitry for 1-cell rechargeable battery packs. It provides overcharge (VCU = 4.25 V ±25 mV), overdischarge (VDL = 2.50 V ±35 mV), discharge/charge overcurrent (VDOC = 0.15 V ±15 mV; VCOC = −0.10 V ±15 mV), short-circuit (VSHORT = 0.55 V ±100 mV), and overvoltage charger (VOVCHG = 8.0 V ±2 V) protection with fixed delay timing and 0V charge enable functionality.

For engineers reviewing the AP9214LA-AE-HSBR-7 datasheet, AP9214LA-AE-HSBR-7 pinout, AP9214LA-AE-HSBR-7 application, or AP9214LA-AE-HSBR-7 equivalent, this device supports high-accuracy, low-quiescent-current (3.0 µA typ in normal mode) battery safety control in space-constrained portable electronics where thermal management, MOSFET integration, and configurable protection thresholds are critical selection criteria.

Technical Context

The AP9214LA-AE-HSBR-7 implements independent analog comparators for VDD–VSS (cell voltage), VM–VSS (current-sense), and VDD–VM (charger voltage), each feeding into logic-controlled MOSFET gate drivers. Its dual-MOSFET architecture uses a common-drain EP pad and separate S1 (discharge source) and S2 (charge source) terminals to enable independent control of charge and discharge paths.

Protection decisions incorporate built-in delay timers (e.g., tCU = 1.0 s typ, ±20% accuracy) and hysteresis (e.g., VCL = 4.15 V, ΔV = 0.10 V) to prevent oscillation during threshold transitions. The device supports two operational modes: power-down (0.1 µA max standby current) or auto-wake-up, selectable at factory via internal configuration - the "A" suffix denotes auto-wake-up capability.

Key Specifications

Pinout & Package

AP9214LA-AE-HSBR-7 is housed in a U-DFN2535-6 (Type B) package with exposed thermal pad (EP), optimized for low-profile battery pack PCB layouts. Pin-out Option 2 places VM at Pin 4 and S2 at Pin 5, with Pin 4 (VM) serving as the bidirectional current-sense input for both charge and discharge paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 1-cell Li+ battery protection applications.

Compared with S-8261AAL-M6T1U and RP506K001B-TR-F, the AP9214LA-AE-HSBR-7 delivers integrated dual-FET control, true bi-directional current sensing via VM, and factory-configurable 0V charge - reducing total solution size by 35% and eliminating four external components required by alternatives.

Availability

AP9214LA-AE-HSBR-7 is available at Aetrix Electronics and suitable for power tool battery packs, wireless headphone charging cases, medical wearable monitors, and smart home sensor nodes requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for AP9214LA-AE-HSBR-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The AP9214L series belongs to Diodes' battery protection IC product line, engineered specifically for space-constrained, high-safety 1-cell Li+ applications where integrated MOSFETs, ultra-low IQ, and factory-programmed thresholds eliminate design variability and accelerate time-to-market.

FAQ

What is the function of the VM pin in AP9214LA-AE-HSBR-7?

The VM pin serves as a bidirectional current-sense input: its voltage relative to VSS detects discharge overcurrent and short circuits, while its voltage relative to VDD monitors charger overvoltage. Internally, it connects to RVMS (pull-down) and RVMD (pull-up) resistors that activate selectively during overdischarge or overcurrent states to enforce protection logic without external components.

How does the auto-wake-up mode differ from power-down mode in this device?

Auto-wake-up mode (denoted by "A" in AP9214LA) keeps the IC active during overdischarge, allowing recovery when battery voltage rises above VDU and holds for tDLR. Power-down mode forces the IC into ultra-low-current sleep (0.1 µA), requiring charger connection to exit overdischarge - AP9214LA-AE-HSBR-7 implements the former, enabling autonomous reactivation without external intervention.

Can AP9214LA-AE-HSBR-7 protect against reverse-polarity charger connection?

Yes - the internal R1 and R2 current-limiting resistors (recommended 330–470 Ω and 300–4 kΩ respectively) dissipate energy during reverse connection, preventing latch-up or damage. However, prolonged reverse bias exceeds absolute maximum ratings; proper mechanical keying and connector polarity enforcement remain essential for robust system-level protection.

What thermal considerations apply to the EP pad in U-DFN2535-6 packaging?

The EP pad is the common drain for both MOSFETs and must be soldered to a minimum 25 mm² copper area on the PCB's inner or bottom layer, connected via ≥4 thermal vias (0.3 mm diameter) to internal ground planes. This achieves ≤45°C/W junction-to-ambient thermal resistance, limiting die temperature rise to <35°C at 9 A continuous current - critical for maintaining R_SS(ON) stability and long-term reliability.